Study of electromagnetic reactions on light nuclei with the Lorentz Integral Transform method

In dieser Arbeit aus dem Bereich der Wenig-Nukleonen-Physik wird die neu entwickelte Methode der Lorentz Integral Transformation (LIT) auf die Untersuchung von Kernphotoabsorption und Elektronenstreuung an leichten Kernen angewendet. Die LIT-Methode ermoeglicht exakte Rechnungen durchzufuehren, ohne explizite Bestimmung der Endzustaende im Kontinuum. Das Problem wird auf die Loesung einer bindungzustandsaehnlichen Gleichung reduziert, bei der die Endzustandswechselwirkung vollstaendig beruecksichtigt wird. Die Loesung der LIT-Gleichung wird mit Hilfe einer Entwicklung nach hypersphaerischen harmonischen Funktionen durchgefuehrt, deren Konvergenz durch Anwendung einer effektiven Wechselwirkung im Rahmem des hypersphaerischen Formalismus (EIHH) beschleunigt wird. In dieser Arbeit wird die erste mikroskopische Berechnung des totalen Wirkungsquerschnittes fuer Photoabsorption unterhalb der Pionproduktionsschwelle an 6Li, 6He und 7Li vorgestellt. Die Rechnungen werden mit zentralen semirealistischen NN-Wechselwirkungen durchgefuehrt, die die Tensor Kraft teilweise simulieren, da die Bindungsenergien von Deuteron und von Drei-Teilchen-Kernen richtig reproduziert werden. Der Wirkungsquerschnitt fur Photoabsorption an 6Li zeigt nur eine Dipol-Riesenresonanz, waehrend 6He zwei unterschiedliche Piks aufweist, die dem Aufbruch vom Halo und vom Alpha-Core entsprechen. Der Vergleich mit experimentellen Daten zeigt, dass die Addition einer P-Wellen-Wechselwirkung die Uebereinstimmung wesentlich verbessert. Bei 7Li wird nur eine Dipol-Riesenresonanz gefunden, die gut mit den verfuegbaren experimentellen Daten uebereinstimmt. Bezueglich der Elektronenstreuung wird die Berechnung der longitudinalen und transversalen Antwortfunktionen von 4He im quasi-elastischen Bereich fuer mittlere Werte des Impulsuebertrages dargestellt. Fuer die Ladungs- und Stromoperatoren wird ein nichtrelativistisches Modell verwendet. Die Rechnungen sind mit semirealistischen Wechselwirkungen durchgefuert und ein eichinvarianter Strom wird durch die Einfuehrung eines Mesonaustauschstroms gewonnen. Die Wirkung des Zweiteilchenstroms auf die transversalen Antwortfunktionen wird untersucht. Vorlaeufige Ergebnisse werden gezeigt und mit den verfuegbaren experimentellen Daten verglichen.

Factorization method and inclusions of mixed type in an inverse elliptic boundary value problem

In various imaging problems the task is to use the Cauchy data of the solutions to an elliptic boundary value problem to reconstruct the coefficients of the corresponding partial differential equation. Often the examined object has known background properties but is contaminated by inhomogeneities that cause perturbations of the coefficient functions. The factorization method of Kirsch provides a tool for locating such inclusions. In this paper, the factorization technique is studied in the framework of coercive elliptic partial differential equations of the divergence type: Earlier it has been demonstrated that the factorization algorithm can reconstruct the support of a strictly positive (or negative) definite perturbation of the leading order coefficient, or if that remains unperturbed, the support of a strictly positive (or negative) perturbation of the zeroth order coefficient. In this work we show that these two types of inhomogeneities can, in fact, be located simultaneously. Unlike in the earlier articles on the factorization method, our inclusions may have disconnected complements and we also weaken some other a priori assumptions of the method. Our theoretical findings are complemented by two-dimensional numerical experiments that are presented in the framework of the diffusion approximation of optical tomography.

Existence of solutions and asymtptotic limits of the Euler-Poisson and the quantum drift-diffusion systems

My work concerns two different systems of equations used in the mathematical modeling of semiconductors and plasmas: the Euler-Poisson system and the quantum drift-diffusion system. The first is given by the Euler equations for the conservation of mass and momentum, with a Poisson equation for the electrostatic potential. The second one takes into account the physical effects due to the smallness of the devices (quantum effects). It is a simple extension of the classical drift-diffusion model which consists of two continuity equations for the charge densities, with a Poisson equation for the electrostatic potential. Using an asymptotic expansion method, we study (in the steady-state case for a potential flow) the limit to zero of the three physical parameters which arise in the Euler-Poisson system: the electron mass, the relaxation time and the Debye length. For each limit, we prove the existence and uniqueness of profiles to the asymptotic expansion and some error estimates. For a vanishing electron mass or a vanishing relaxation time, this method gives us a new approach in the convergence of the Euler-Poisson system to the incompressible Euler equations. For a vanishing Debye length (also called quasineutral limit), we obtain a new approach in the existence of solutions when boundary layers can appear (i.e. when no compatibility condition is assumed). Moreover, using an iterative method, and a finite volume scheme or a penalized mixed finite volume scheme, we numerically show the smallness condition on the electron mass needed in the existence of solutions to the system, condition which has already been shown in the literature. In the quantum drift-diffusion model for the transient bipolar case in one-space dimension, we show, by using a time discretization and energy estimates, the existence of solutions (for a general doping profile). We also prove rigorously the quasineutral limit (for a vanishing doping profile). Finally, using a new time discretization and an algorithmic construction of entropies, we prove some regularity properties for the solutions of the equation obtained in the quasineutral limit (for a vanishing pressure). This new regularity permits us to prove the positivity of solutions to this equation for at least times large enough.

Simulations of charge transport in organic compounds

To aid the design of organic semiconductors, we study the charge transport properties of organic liquid crystals, i.e. hexabenzocoronene and carbazole macrocycle, and single crystals, i.e. rubrene, indolocarbazole and benzothiophene derivatives (BTBT, BBBT). The aim is to find structure-property relationships linking the chemical structure as well as the morphology with the bulk charge carrier mobility of the compounds. To this end, molecular dynamics (MD) simulations are performed yielding realistic equilibrated morphologies. Partial charges and molecular orbitals are calculated based on single molecules in vacuum using quantum chemical methods. The molecular orbitals are then mapped onto the molecular positions and orientations, which allows calculation of the transfer integrals between nearest neighbors using the molecular orbital overlap method. Thus we obtain realistic transfer integral distributions and their autocorrelations. In case of organic crystals the differences between two descriptions of charge transport, namely semi-classical dynamics (SCD) in the small polaron limit and kinetic Monte Carlo (KMC) based on Marcus rates, are studied. The liquid crystals are investigated solely in the hopping limit. To simulate the charge dynamics using KMC, the centers of mass of the molecules are mapped onto lattice sites and the transfer integrals are used to compute the hopping rates. In the small polaron limit, where the electronic wave function is spread over a limited number of neighboring molecules, the Schroedinger equation is solved numerically using a semi-classical approach. The results are compared for the different compounds and methods and, where available, with experimental data. The carbazole macrocycles form columnar structures arranged on a hexagonal lattice with side chains facing inwards, so columns can closely approach each other allowing inter-columnar and thus three-dimensional transport. When taking only intra-columnar transport into account, the mobility is orders of magnitude lower than in the three-dimensional case. BTBT is a promising material for solution-processed organic field-effect transistors. We are able to show that, on the time-scales of charge transport, static disorder due to slow side chain motions is the main factor determining the mobility. The resulting broad transfer integral distributions modify the connectivity of the system but sufficiently many fast percolation paths remain for the charges. Rubrene, indolocarbazole and BBBT are examples of crystals without significant static disorder. The high mobility of rubrene is explained by two main features: first, the shifted cofacial alignment of its molecules, and second, the high center of mass vibrational frequency. In comparsion to SCD, only KMC based on Marcus rates is capable of describing neighbors with low coupling and of taking static disorder into account three-dimensionally. Thus it is the method of choice for crystalline systems dominated by static disorder. However, it is inappropriate for the case of strong coupling and underestimates the mobility of well-ordered crystals. SCD, despite its one-dimensionality, is valuable for crystals with strong coupling and little disorder. It also allows correct treatment of dynamical effects, such as intermolecular vibrations of the molecules. Rate equations are incapable of this, because simulations are performed on static snapshots. We have thus shown strengths and weaknesses of two state of the art models used to study charge transport in organic compounds, partially developed a program to compute and visualize transfer integral distributions and other charge transport properties, and found structure-mobility relations for several promising organic semiconductors.