Radiation-induced defects in calcium fluoride and their influence on material properties under 193 nm laser irradiation

Calcium fluoride (CaF2) is one of the key lens materials in deep-ultraviolet microlithography because of its transparency at 193 nm and its nearly perfect optical isotropy. Its physical and chemical properties make it applicable for lens fabrication. The key feature of CaF2 is its extreme laser stability. rnAfter exposing CaF2 to 193 nm laser irradiation at high fluences, a loss in optical performance is observed, which is related to radiation-induced defect structures in the material. The initial rapid damage process is well understood as the formation of radiation-induced point defects, however, after a long irradiation time of up to 2 months, permanent damage of the crystals is observed. Based on experimental results, these permanent radiation-induced defect structures are identified as metallic Ca colloids.rnThe properties of point defects in CaF2 and their stabilization in the crystal bulk are calculated with density functional theory (DFT). Because the stabilization of the point defects and the formation of metallic Ca colloids are diffusion-driven processes, the diffusion coefficients for the vacancy (F center) and the interstitial (H center) in CaF2 are determined with the nudged elastic band method. The optical properties of Ca colloids in CaF2 are obtained from Mie-theory, and their formation energy is determined.rnBased on experimental observations and the theoretical description of radiation-induced point defects and defect structures, a diffusion-based model for laser-induced material damage in CaF2 is proposed, which also includes a mechanism for annealing of laser damage. rn

Imaging spin-filter efficiency of W(001) and Ir(001) single crystals

Während der letzten Jahre wurde für Spinfilter-Detektoren ein wesentlicher Schritt in Richtung stark erhöhter Effizienz vollzogen. Das ist eine wichtige Voraussetzung für spinaufgelöste Messungen mit Hilfe von modernen Elektronensp ektrometern und Impulsmikroskopen. In dieser Doktorarbeit wurden bisherige Arbeiten der parallel abbildenden Technik weiterentwickelt, die darauf beruht, dass ein elektronenoptisches Bild unter Ausnutzung der k-parallel Erhaltung in der Niedrigenergie-Elektronenbeugung auch nach einer Reflektion an einer kristallinen Oberfläche erhalten bleibt. Frühere Messungen basierend auf der spekularen Reflexion an einerrnW(001) Oberfläche [Kolbe et al., 2011; Tusche et al., 2011] wurden auf einenrnviel größeren Parameterbereich erweitert und mit Ir(001) wurde ein neues System untersucht, welches eine sehr viel längere Lebensdauer der gereinigten Kristalloberfläche im UHV aufweist. Die Streuenergie- und Einfallswinkel-“Landschaft” der Spinempfindlichkeit S und der Reflektivität I/I0 von gestreuten Elektronen wurde im Bereich von 13.7 - 36.7 eV Streuenergie und 30◦ - 60◦ Streuwinkel gemessen. Die dazu neu aufgebaute Messanordnung umfasst eine spinpolarisierte GaAs Elektronenquellernund einen drehbaren Elektronendetektor (Delayline Detektor) zur ortsauflösenden Detektion der gestreuten Elektronen. Die Ergebnisse zeigen mehrere Regionen mit hoher Asymmetrie und großem Gütefaktor (figure of merit FoM), definiert als S2 · I/I0. Diese Regionen eröffnen einen Weg für eine deutliche Verbesserung der Vielkanal-Spinfiltertechnik für die Elektronenspektroskopie und Impulsmikroskopie. Im praktischen Einsatz erwies sich die Ir(001)-Einkristalloberfläche in Bezug auf längere Lebensdauer im UHV (ca. 1 Messtag), verbunden mit hoher FOM als sehr vielversprechend. Der Ir(001)-Detektor wurde in Verbindung mit einem Halbkugelanalysator bei einem zeitaufgelösten Experiment im Femtosekunden-Bereich am Freie-Elektronen-Laser FLASH bei DESY eingesetzt. Als gute Arbeitspunkte erwiesen sich 45◦ Streuwinkel und 39 eV Streuenergie, mit einer nutzbaren Energiebreite von 5 eV, sowie 10 eV Streuenergie mit einem schmaleren Profil von < 1 eV aber etwa 10× größerer Gütefunktion. Die Spinasymmetrie erreicht Werte bis 70 %, was den Einfluss von apparativen Asymmetrien deutlich reduziert. Die resultierende Messungen und Energie-Winkel-Landschaft zeigt recht gute Übereinstimmung mit der Theorie (relativistic layer-KKR SPLEED code [Braun et al., 2013; Feder et al.,rn2012])

Internal characteristics, chemical compounds and spectroscopy of sapphire as single crystals

In this study more than 450 natural sapphire samples (most of basaltic type) collected from 19 different areas were examined. They are from Dak Nong, Dak Lak, Quy Chau, two unknown sources from the north (Vietnam); Bo Ploi, Khao Ploi Waen (Thailand); Ban Huay Sai (Laos); Australia; Shandong (China); Andapa, Antsirabe, Nosibe (Madagascar); Ballapana (Sri Lanka); Brazil; Russia; Colombia; Tansania and Malawi. rnThe samples were studied on internal characteristics, chemical compositions, Raman-, luminescence-, Fourier transform infrared (FTIR)-, and ultraviolet-visible-near infrared (UV-Vis-NIR)- spectroscopy. The internal features of these sapphire samples were observed and identified by gemological microscope, con focal micro Raman and FTIR spectroscopy. The major and minor elements of the samples were determined by electron probe microanalysis (EPMA) and the trace elements by laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). rnThe structural spectra of sapphire were investigated by con focal Raman spectroscopy. The FTIR spectroscopy was used to study the vibration modes of OH-groups and also to determine hydrous mineral inclusions in sapphire. The UV-Vis-NIR absorption spectroscopy was used to analyze the cause of sapphire color. rnNatural sapphires contain many types of mineral inclusions. Typically, they are iron-containing inclusions like goethite, ilmenite, hematite, magnetite or silicate minerals commonly feldspar, and often observed in sapphires from Asia countries, like Dak Nong, Dak Lak in the south of Vietnam, Ban Huay Sai (Laos), Khao Ploi Waen and Bo Ploi (Thailand) or Shandong (China). Meanwhile, CO2-diaspore inclusions are normally found in sapphires from Tansania, Colombia, or the north of Vietnam like Quy Chau. rnIron is the most dominant element in sapphire, up to 1.95 wt.% Fe2O3 measured by EPMA and it affects spectral characteristics of sapphire.rnThe Raman spectra of sapphire contain seven peaks (2A1g + 5Eg). Two peaks at about 418.3 cm-1 and 577.7 cm-1 are influenced by high iron content. These two peaks shift towards smaller wavenumbers corresponding to increasing iron content. This shift is showed by two equations y(418.3)=418.29-0.53x andy(577.7)=577.96-0.75x, in which y is peak position (cm-1) and x is Fe2O3 content (wt.%). By exploiting two these equations one can estimate the Fe2O3 contents of sapphire or corundum by identifying the respective Raman peak positions. Determining the Fe2O3 content in sapphire can help to distinguish sapphires from different origins, e.g. magmatic and metamorphic sapphire. rnThe luminescence of sapphire is characterized by two R-lines: R1 at about 694 nm and R2 at about 692 nm. This characteristic is also influenced by high iron content. The peak positions of two R-lines shift towards to smaller wavelengths corresponding to increasing of iron content. This correlation is showed by two equations y(R_2 )=692.86-0.049x and y(R_1 )=694.29-0.047x, in which y is peak position (nm) of respective R-lines and x is Fe2O3 content (wt.%). Two these equations can be applied to estimate the Fe2O3 content of sapphire and help to separate sapphires from different origins. The luminescence is also applied for determination of the remnant pressure or stress around inclusions in Cr3+-containing corundum by calibrating a 0-pressure position in experimental techniques.rnThe infrared spectra show the presence of vibrations originating from OH-groups and hydrous mineral inclusions in the range of 2500-4000 cm-1. Iron has also an effect upon the main and strongest peak at about 3310 cm-1. The 3310 cm-1 peak is shifted to higher wavenumber when iron content increases. This relationship is expressed by the equation y(3310)=0.92x+3309.17, in which y is peak position of the 3310 cm-1 and x is Fe2O3 content (wt.%). Similar to the obtained results in Raman and luminescence spectra, this expression can be used to estimate the Fe2O3 content and separate sapphires from different origins. rnThe UV-Vis-NIR absorption spectra point out the strong and sharp peaks at about 377, 387, and 450 nm related to dispersed Fe3+, a broad band around 557 and 600 nm related to intervalence charge transfer (IVCT) Fe2+/Ti4+, and a broader band around 863 nm related to IVCT of Fe2+/Fe3+. rnGenerally, sapphires from different localities were completely investigated on internal features, chemical compounds, and solid spectral characteristics. The results in each part contribute for identifying the iron content and separate sapphires from different localities order origins. rn