Finite-element discretization of 3D energy-transport equations for semiconductors

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.

Finite-strain analysis in orthogneiss of the Gran Paradiso massif, Western Alps, Italy

A finite-strain study in the Gran Paradiso massif of the Italian Western Alps has been carried out to elucidate whether ductile strain shows a relationship to nappe contacts and to shed light on the nature of the subhorizontal foliation typical of the gneiss nappes in the Alps. The Rf/_ and Fry methods used on feldspar porphyroclasts from 143 augengneiss and 11 conglomerate samples of the Gran Paradiso unit (upper tectonic unit of the Gran Paradiso massif), as well as, 9 augengneiss (Erfaulet granite) and 3 quartzite conglomerate samples from the underlying Erfaulet unit (lower unit of the Gran Paradiso massif), and 1 sample from mica schist. Microstructures and thermobarometric data show that feldspar ductility at temperatures >~450°C occurred only during high-pressure metamorphism, when the rocks were underplated beneath the overriding Adriatic plate. Therefore, the finite-strain data can be related to high-pressure metamorphism in the Alpine subduction zone. The augen gneiss was heterogeneously deformed and axial ratios of the strain ellipse in XZ sections range from 2.1 to 69.8. The long axes of the finite-strain ellipsoids trend W/WNW and the short axes are subvertical associated with a subhorizontal foliation. The strain magnitudes do not increase towards the nappe contacts. Geochemical work shows that the accumulation of finite strain was not associated with any significant volume strain. Hence, the data indicate flattening strain type in the Gran Paradiso unit and constrictional strain type in the Erfaulet unit and prove deviations from simple shear. In addition, electron microprobe work was undertaken to determine if the analysed fabrics formed during high-P metamorphism. The chemistry of phengites in the studied samples suggests that deformation and final structural juxtaposition of the Gran Paradiso unit against the Erfaulet took place during high-pressure metamorphism. On the other hand, nappe stacking occurred early during subduction probably by brittle imbrication and that ductile strain was superimposed on and modified the nappe structure during high-pressure underplating in the Alpine subduction zone. The accumulation of ductile strain during underplating was not by simple shear and involved a component of vertical shortening, which caused the subhorizontal foliation in the Gran Paradiso massif. It is concluded that this foliation formed during thrusting of the nappes onto each other suggesting that nappe stacking was associated with vertical shortening. The primary evidence for this interpretation is an attenuated metamorphic section with high-pressure metamorphic rocks of the Gran Paradiso unit juxtaposed against the Erfaulet unit. Therefore, the exhumation during high-pressure metamorphism in the Alpine subduction zone involved a component of vertical shortening, which is responsible for the subhorizontal foliation within the nappes.

Mixed finite-element methods for elliptic convection-dominated problems arising in semiconductor physics

In this work we develop and analyze an adaptive numerical scheme for simulating a class of macroscopic semiconductor models. At first the numerical modelling of semiconductors is reviewed in order to classify the Energy-Transport models for semiconductors that are later simulated in 2D. In this class of models the flow of charged particles, that are negatively charged electrons and so-called holes, which are quasi-particles of positive charge, as well as their energy distributions are described by a coupled system of nonlinear partial differential equations. A considerable difficulty in simulating these convection-dominated equations is posed by the nonlinear coupling as well as due to the fact that the local phenomena such as "hot electron effects" are only partially assessable through the given data. The primary variables that are used in the simulations are the particle density and the particle energy density. The user of these simulations is mostly interested in the current flow through parts of the domain boundary - the contacts. The numerical method considered here utilizes mixed finite-elements as trial functions for the discrete solution. The continuous discretization of the normal fluxes is the most important property of this discretization from the users perspective. It will be proven that under certain assumptions on the triangulation the particle density remains positive in the iterative solution algorithm. Connected to this result an a priori error estimate for the discrete solution of linear convection-diffusion equations is derived. The local charge transport phenomena will be resolved by an adaptive algorithm, which is based on a posteriori error estimators. At that stage a comparison of different estimations is performed. Additionally a method to effectively estimate the error in local quantities derived from the solution, so-called "functional outputs", is developed by transferring the dual weighted residual method to mixed finite elements. For a model problem we present how this method can deliver promising results even when standard error estimator fail completely to reduce the error in an iterative mesh refinement process.