Mixed finite-element methods for elliptic convection-dominated problems arising in semiconductor physics

In this work we develop and analyze an adaptive numerical scheme for simulating a class of macroscopic semiconductor models. At first the numerical modelling of semiconductors is reviewed in order to classify the Energy-Transport models for semiconductors that are later simulated in 2D. In this class of models the flow of charged particles, that are negatively charged electrons and so-called holes, which are quasi-particles of positive charge, as well as their energy distributions are described by a coupled system of nonlinear partial differential equations. A considerable difficulty in simulating these convection-dominated equations is posed by the nonlinear coupling as well as due to the fact that the local phenomena such as "hot electron effects" are only partially assessable through the given data. The primary variables that are used in the simulations are the particle density and the particle energy density. The user of these simulations is mostly interested in the current flow through parts of the domain boundary - the contacts. The numerical method considered here utilizes mixed finite-elements as trial functions for the discrete solution. The continuous discretization of the normal fluxes is the most important property of this discretization from the users perspective. It will be proven that under certain assumptions on the triangulation the particle density remains positive in the iterative solution algorithm. Connected to this result an a priori error estimate for the discrete solution of linear convection-diffusion equations is derived. The local charge transport phenomena will be resolved by an adaptive algorithm, which is based on a posteriori error estimators. At that stage a comparison of different estimations is performed. Additionally a method to effectively estimate the error in local quantities derived from the solution, so-called "functional outputs", is developed by transferring the dual weighted residual method to mixed finite elements. For a model problem we present how this method can deliver promising results even when standard error estimator fail completely to reduce the error in an iterative mesh refinement process.

Grazing incidence pumped Zr x-ray laser for spectroscopy on Li-like ions

X-ray laser fluorescence spectroscopy of the 2s-2p transition in Li-like ions is promising to become a widely applicable tool to provide information on the nuclear charge radii of stable and radioactive isotopes. For performing such experiments at the Experimental Storage Ring ESR, and the future NESR within the FAIR Project, a grazing incidence pumped (GRIP) x-ray laser (XRL) was set up at GSI Darmstadt using PHELIX (Petawatt High Energy Laser for heavy Ions eXperiments). The experiments demonstrated that lasing using the GRIP geometry could be achieved with relatively low pump energy, a prerequisite for higher repetition rate. In the first chapter the need of a plasma XRL is motivated and a short history of the plasma XRL is presented. The distinctive characteristic of the GRIP method is the controlled deposition of the pump laser energy into the desired plasma density region. While up to now the analysis performed were mostly concerned with the plasma density at the turning point of the main pump pulse, in this thesis it is demonstrated that also the energy deposition is significantly modified for the GRIP method, being sensitive in different ways to a large number of parameters. In the second chapter, the theoretical description of the plasma evolution, active medium and XRL emission properties are reviewed. In addition an innovative analysis of the laser absorption in plasma which includes an inverse Bremsstrahlung (IB) correction factor is presented. The third chapter gives an overview of the experimental set-up and diagnostics, providing an analytical formula for the average and instantaneous traveling wave speed generated with a tilted, on-axis spherical mirror, the only focusing system used up to now in GRIP XRL. The fourth chapter describes the experimental optimization and results. The emphasis is on the effect of the incidence angle of the main pump pulse on the absorption in plasma and on output and gain in different lasing lines. This is compared to the theoretical results for two different incidence angles. Significant corrections for the temperature evolution during the main pump pulse due to the incidence angle are demonstrated in comparison to a simple analytical model which does not take into account the pumping geometry. A much better agreement is reached by the model developed in this thesis. An interesting result is also the appearance of a central dip in the spatially resolved keV emission which was observed in the XRL experiments for the first time and correlates well with previous near field imaging and plasma density profile measurements. In the conclusion also an outlook to the generation of shorter wavelength XRL’s is given.

Conjugated semiconducting organic materials for electronic applications

Since conjugated polymers, i.e. polymers with spatially extended pi-bonding system have offered unique physical properties, unobtainable for conventional polymers, significant research efforts directed to better understanding of their chemistry, physics and engineering have been undertaken in the past two and half decades. In this thesis we discuss the synthesis, characterisation and investigation of conjugated semiconducting organic materials for electronic applications. Owing to the versatile properties of metal-organic hybrid materials, there is significant promise that these materials can find use in optical or electronic devices in the future. In addressing this issue, the synthesis of bisthiazol-2-yl-amine (BTA) based polymers is attempted and their metallation is investigated. The focus of this work has been to examine whether the introduction of coordinating metal ions onto the polymer backbone can enhance the conductivity of the material. These studies can provide a basis for understanding the photophysical properties of metal-organic polymers based on BTA. In their neutral (undoped) form conjugated polymers are semiconductors and can be used as active components of plastics electronics such as polymer light-emitting diodes, polymer lasers, photovoltaic cells, field-effect transistors, etc. Toward this goal, it is an objective of the study to synthesize and characterize new classes of luminescent polymeric materials based on anthracene and phenanthrene moieties. A series of materials based on polyphenylenes and poly(phenyleneethynylene)s with 9,10-anthrylene subunits are not only presented but the synthesis and characterization of step-ladder and ladder poly(p-phenylene-alt-anthrylene)s containing 9,10-anthrylene building groups within the main chain are also explored. In a separate work, a series of soluble poly-2,7- and 3,6-phenanthrylenes are synthesized. This can enable us to do a systematic investigation into the optical and electronic properties of PPP-like versus PPV-like. Besides, the self-organization of 3,6-linked macrocyclic triphenanthrylene has been investigated by 2D wide-angle X-ray scattering experiments performed on extruded filaments in solution and in the bulk. Additionally, from the concept that donor-acceptor materials can induce efficient electron transfer, the covalent incorporation of perylene tetracarboxydiimide (PDI) into one block of a poly(2,7-carbazole) (PCz)-based diblock copolymer and 2,5-pyrrole based on push-pull type material are achieved respectively.

Synthesis and surface modification of semiconductor nanocrystals

The last decade has witnessed an exponential growth of activities in the field of nanoscience and nanotechnology worldwide, driven both by the excitement of understanding new science and by the potential hope for applications and economic impacts. The largest activity in this field up to date has been in the synthesis and characterization of new materials consisting of particles with dimensions in the order of a few nanometers, so-called nanocrystalline materials. [1-8] Semiconductor nanomaterials such as III/V or II/VI compound semiconductors exhibit strong quantum confinement behavior in the size range from 1 to 10 nm. Therefore, preparation of high quality semiconductor nanocrystals has been a challenge for synthetic chemists, leading to the recent rapid progress in delivering a wide variety of semiconducting nanomaterials. Semiconductor nanocrystals, also called quantum dots, possess physical properties distinctly different from those of the bulk material. Typically, in the size range from 1 to 10 nm, when the particle size is changed, the band gap between the valence and the conduction band will change, too. In a simple approximation a particle in a box model has been used to describe the phenomenon[9]: at nanoscale dimensions the degenerate energy states of a semiconductor separate into discrete states and the system behaves like one big molecule. The size-dependent transformation of the energy levels of the particles is called “quantum size-effect”. Quantum confinement of both the electron and hole in all three dimensions leads to an increase in the effective bandgap of the material with decreasing crystallite size. Consequently, both the optical absorption and emission of semiconductor nanaocrystals shift to the blue (higher energies) as the size of the particles gets smaller. This color tuning is well documented for CdSe nanocrystals whose absorption and emission covers almost the whole visible spectral range. As particle sizes become smaller the ratio of surface atoms to those in the interior increases, which has a strong impact on particle properties, too. Prominent examples are the low melting point [8] and size/shape dependent pressure resistance [10] of semiconductor nanocrystals. Given the size dependence of particle properties, chemists and material scientists now have the unique opportunity to change the electronic and chemical properties of a material by simply controlling the particle size. In particular, CdSe nanocrystals have been widely investigated. Mainly due to their size-dependent optoelectronic properties [11, 12] and flexible chemical processibility [13], they have played a distinguished role for a number of seminal studies [11, 12, 14, 15]. Potential technical applications have been discussed, too. [8, 16-27] Improvement of the optoelectronic properties of semiconductor nanocrystals is still a prominent research topic. One of the most important approaches is fabricating composite type-I core-shell structures which exhibit improved properties, making them attractive from both a fundamental and a practical point of view. Overcoating of nanocrystallites with higher band gap inorganic materials has been shown to increase the photoluminescence quantum yields by eliminating surface nonradiative recombination sites. [28] Particles passivated with inorganic shells are more robust than nanocrystals covered by organic ligands only and have greater tolerance to processing conditions necessary for incorporation into solid state structures or for other applications. Some examples of core-shell nanocrystals reported earlier include CdS on CdSe [29], CdSe on CdS, [30], ZnS on CdS, [31] ZnS on CdSe[28, 32], ZnSe on CdSe [33] and CdS/HgS/CdS [34]. The characterization and preparation of a new core-shell structure, CdSe nanocrystals overcoated by different shells (CdS, ZnS), is presented in chapter 4. Type-I core-shell structures as mentioned above greatly improve the photoluminescence quantum yield and chemical and photochemical stability of nanocrystals. The emission wavelengths of type-I core/shell nanocrystals typically only shows a small red-shift when compared to the plain core nanocrystals. [30, 31, 35] In contrast to type-I core-shell nanocrystals, only few studies have been conducted on colloidal type-II core/shell structures [36-38] which are characterized by a staggered alignment of conduction and valence bands giving rise to a broad tunability of absorption and emission wavelengths, as was shown for CdTe/CdSe core-shell nanocrystals. [36] The emission of type-II core/shell nanocrystals mainly originates from the radiative recombination of electron-hole pairs across the core-shell interface leading to a long photoluminescence lifetime. Type-II core/shell nanocrystals are promising with respect to photoconduction or photovoltaic applications as has been discussed in the literature.[39] Novel type-II core-shell structures with ZnTe cores are reported in chapter 5. The recent progress in the shape control of semiconductor nanocrystals opens new fields of applications. For instance, rod shaped CdSe nanocrystals can enhance the photo-electro conversion efficiency of photovoltaic cells, [40, 41] and also allow for polarized emission in light emitting diodes. [42, 43] Shape control of anisotropic nanocrystals can be achieved by the use of surfactants, [44, 45] regular or inverse micelles as regulating agents, [46, 47] electrochemical processes, [48] template-assisted [49, 50] and solution-liquid-solution (SLS) growth mechnism. [51-53] Recently, formation of various CdSe nanocrystal shapes has been reported by the groups of Alivisatos [54] and Peng, [55] respectively. Furthermore, it has been reported by the group of Prasad [56] that noble metal nanoparticles can induce anisotropic growth of CdSe nanocrystals at lower temperatures than typically used in other methods for preparing anisotropic CdSe structures. Although several approaches for anisotropic crystal growth have been reported by now, developing new synthetic methods for the shape control of colloidal semiconductor nanocrystals remains an important goal. Accordingly, we have attempted to utilize a crystal phase control approach for the controllable synthesis of colloidal ZnE/CdSe (E = S, Se, Te) heterostructures in a variety of morphologies. The complex heterostructures obtained are presented in chapter 6. The unique optical properties of nanocrystals make them appealing as in vivo and in vitro fluorophores in a variety of biological and chemical investigations, in which traditional fluorescence labels based on organic molecules fall short of providing long-term stability and simultaneous detection of multiple emission colours [References]. The ability to prepare water soluble nanocrystals with high stability and quantum yield has led to promising applications in cellular labeling, [57, 58] deep-tissue imaging, [59, 60] and assay labeling [61, 62]. Furthermore, appropriately solubilized nanocrystals have been used as donors in fluorescence resonance energy transfer (FRET) couples. [63-65] Despite recent progress, much work still needs to be done to achieve reproducible and robust surface functionalization and develop flexible (bio-) conjugation techniques. Based on multi-shell CdSe nanocrystals, several new solubilization and ligand exchange protocols have been developed which are presented in chapter 7. The organization of this thesis is as follows: A short overview describing synthesis and properties of CdSe nanocrystals is given in chapter 2. Chapter 3 is the experimental part providing some background information about the optical and analytical methods used in this thesis. The following chapters report the results of this work: synthesis and characterization of type-I multi-shell and type-II core/shell nanocrystals are described in chapter 4 and chapter 5, respectively. In chapter 6, a high–yield synthesis of various CdSe architectures by crystal phase control is reported. Experiments about surface modification of nanocrystals are described in chapter 7. At last, a short summary of the results is given in chapter 8.

Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices

In this work the numerical coupling of thermal and electric network models with model equations for optoelectronic semiconductor devices is presented. Modified nodal analysis (MNA) is applied to model electric networks. Thermal effects are modeled by an accompanying thermal network. Semiconductor devices are modeled by the energy-transport model, that allows for thermal effects. The energy-transport model is expandend to a model for optoelectronic semiconductor devices. The temperature of the crystal lattice of the semiconductor devices is modeled by the heat flow eqaution. The corresponding heat source term is derived under thermodynamical and phenomenological considerations of energy fluxes. The energy-transport model is coupled directly into the network equations and the heat flow equation for the lattice temperature is coupled directly into the accompanying thermal network. The coupled thermal-electric network-device model results in a system of partial differential-algebraic equations (PDAE). Numerical examples are presented for the coupling of network- and one-dimensional semiconductor equations. Hybridized mixed finite elements are applied for the space discretization of the semiconductor equations. Backward difference formluas are applied for time discretization. Thus, positivity of charge carrier densities and continuity of the current density is guaranteed even for the coupled model.

Towards a new test of time dilation: Laser spectroscopy on lithium ions stored at a velocity of 33.8 % of the speed of light

The subject of the presented thesis is the accurate measurement of time dilation, aiming at a quantitative test of special relativity. By means of laser spectroscopy, the relativistic Doppler shifts of a clock transition in the metastable triplet spectrum of ^7Li^+ are simultaneously measured with and against the direction of motion of the ions. By employing saturation or optical double resonance spectroscopy, the Doppler broadening as caused by the ions' velocity distribution is eliminated. From these shifts both time dilation as well as the ion velocity can be extracted with high accuracy allowing for a test of the predictions of special relativity. A diode laser and a frequency-doubled titanium sapphire laser were set up for antiparallel and parallel excitation of the ions, respectively. To achieve a robust control of the laser frequencies required for the beam times, a redundant system of frequency standards consisting of a rubidium spectrometer, an iodine spectrometer, and a frequency comb was developed. At the experimental section of the ESR, an automated laser beam guiding system for exact control of polarisation, beam profile, and overlap with the ion beam, as well as a fluorescence detection system were built up. During the first experiments, the production, acceleration and lifetime of the metastable ions at the GSI heavy ion facility were investigated for the first time. The characterisation of the ion beam allowed for the first time to measure its velocity directly via the Doppler effect, which resulted in a new improved calibration of the electron cooler. In the following step the first sub-Doppler spectroscopy signals from an ion beam at 33.8 %c could be recorded. The unprecedented accuracy in such experiments allowed to derive a new upper bound for possible higher-order deviations from special relativity. Moreover future measurements with the experimental setup developed in this thesis have the potential to improve the sensitivity to low-order deviations by at least one order of magnitude compared to previous experiments; and will thus lead to a further contribution to the test of the standard model.

Forensisch relevante SNP-Genotypisierung mittels elektronischer Microarray-Technologie

Die vorliegende Dissertation entstand im Rahmen eines multizentrischen EU-geförderten Projektes, das die Anwendungsmöglichkeiten von Einzelnukleotid-Polymorphismen (SNPs) zur Individualisierung von Personen im Kontext der Zuordnung von biologischen Tatortspuren oder auch bei der Identifizierung unbekannter Toter behandelt. Die übergeordnete Zielsetzung des Projektes bestand darin, hochauflösende Genotypisierungsmethoden zu etablieren und zu validieren, die mit hoher Genauigkeit aber geringen Aufwand SNPs im Multiplexformat simultan analysieren können. Zunächst wurden 29 Y-chromosomale und 52 autosomale SNPs unter der Anforderung ausgewählt, dass sie als Multiplex eine möglichst hohe Individualisierungschance aufweisen. Anschließend folgten die Validierungen beider Multiplex-Systeme und der SNaPshot™-Minisequenzierungsmethode in systematischen Studien unter Beteiligung aller Arbeitsgruppen des Projektes. Die validierte Referenzmethode auf der Basis einer Minisequenzierung diente einerseits für die kontrollierte Zusammenarbeit unterschiedlicher Laboratorien und andererseits als Grundlage für die Entwicklung eines Assays zur SNP-Genotypisierung mittels der elektronischen Microarray-Technologie in dieser Arbeit. Der eigenständige Hauptteil dieser Dissertation beschreibt unter Verwendung der zuvor validierten autosomalen SNPs die Neuentwicklung und Validierung eines Hybridisierungsassays für die elektronische Microarray-Plattform der Firma Nanogen Dazu wurden im Vorfeld drei verschiedene Assays etabliert, die sich im Funktionsprinzip auf dem Microarray unterscheiden. Davon wurde leistungsorientiert das Capture down-Assay zur Weiterentwicklung ausgewählt. Nach zahlreichen Optimierungsmaßnahmen hinsichtlich PCR-Produktbehandlung, gerätespezifischer Abläufe und analysespezifischer Oligonukleotiddesigns stand das Capture down-Assay zur simultanen Typisierung von drei Individuen mit je 32 SNPs auf einem Microarray bereit. Anschließend wurde dieses Verfahren anhand von 40 DNA-Proben mit bekannten Genotypen für die 32 SNPs validiert und durch parallele SNaPshot™-Typisierung die Genauigkeit bestimmt. Das Ergebnis beweist nicht nur die Eignung des validierten Analyseassays und der elektronischen Microarray-Technologie für bestimmte Fragestellungen, sondern zeigt auch deren Vorteile in Bezug auf Schnelligkeit, Flexibilität und Effizienz. Die Automatisierung, welche die räumliche Anordnung der zu untersuchenden Fragmente unmittelbar vor der Analyse ermöglicht, reduziert unnötige Arbeitsschritte und damit die Fehlerhäufigkeit und Kontaminationsgefahr bei verbesserter Zeiteffizienz. Mit einer maximal erreichten Genauigkeit von 94% kann die Zuverlässigkeit der in der forensischen Genetik aktuell eingesetzten STR-Systeme jedoch noch nicht erreicht werden. Die Rolle des neuen Verfahrens wird damit nicht in einer Ablösung der etablierten Methoden, sondern in einer Ergänzung zur Lösung spezieller Probleme wie z.B. der Untersuchung stark degradierter DNA-Spuren zu finden sein.

A new double laser pulse pumping scheme for transient collisionally excited plasma soft X-ray lasers

Within this thesis a new double laser pulse pumping scheme for plasma-based, transient collisionally excited soft x-ray lasers (SXRL) was developed, characterized and utilized for applications. SXRL operations from ~50 up to ~200 electron volt were demonstrated applying this concept. As a central technical tool, a special Mach-Zehnder interferometer in the chirped pulse amplification (CPA) laser front-end was developed for the generation of fully controllable double-pulses to optimally pump SXRLs.rnThis Mach-Zehnder device is fully controllable and enables the creation of two CPA pulses of different pulse duration and variable energy balance with an adjustable time delay. Besides the SXRL pumping, the double-pulse configuration was applied to determine the B-integral in the CPA laser system by amplifying short pulse replica in the system, followed by an analysis in the time domain. The measurement of B-integral values in the 0.1 to 1.5 radian range, only limited by the reachable laser parameters, proved to be a promising tool to characterize nonlinear effects in the CPA laser systems.rnContributing to the issue of SXRL pumping, the double-pulse was configured to optimally produce the gain medium of the SXRL amplification. The focusing geometry of the two collinear pulses under the same grazing incidence angle on the target, significantly improved the generation of the active plasma medium. On one hand the effect was induced by the intrinsically guaranteed exact overlap of the two pulses on the target, and on the other hand by the grazing incidence pre-pulse plasma generation, which allows for a SXRL operation at higher electron densities, enabling higher gain in longer wavelength SXRLs and higher efficiency at shorter wavelength SXRLs. The observation of gain enhancement was confirmed by plasma hydrodynamic simulations.rnThe first introduction of double short-pulse single-beam grazing incidence pumping for SXRL pumping below 20 nanometer at the laser facility PHELIX in Darmstadt (Germany), resulted in a reliable operation of a nickel-like palladium SXRL at 14.7 nanometer with a pump energy threshold strongly reduced to less than 500 millijoule. With the adaptation of the concept, namely double-pulse single-beam grazing incidence pumping (DGRIP) and the transfer of this technology to the laser facility LASERIX in Palaiseau (France), improved efficiency and stability of table-top high-repetition soft x-ray lasers in the wavelength region below 20 nanometer was demonstrated. With a total pump laser energy below 1 joule the target, 2 mircojoule of nickel-like molybdenum soft x-ray laser emission at 18.9 nanometer was obtained at 10 hertz repetition rate, proving the attractiveness for high average power operation. An easy and rapid alignment procedure fulfilled the requirements for a sophisticated installation, and the highly stable output satisfied the need for a reliable strong SXRL source. The qualities of the DGRIP scheme were confirmed in an irradiation operation on user samples with over 50.000 shots corresponding to a deposited energy of ~ 50 millijoule.rnThe generation of double-pulses with high energies up to ~120 joule enabled the transfer to shorter wavelength SXRL operation at the laser facility PHELIX. The application of DGRIP proved to be a simple and efficient method for the generation of soft x-ray lasers below 10 nanometer. Nickel-like samarium soft x-ray lasing at 7.3 nanometer was achieved at a low total pump energy threshold of 36 joule, which confirmed the suitability of the applied pumping scheme. A reliable and stable SXRL operation was demonstrated, due to the single-beam pumping geometry despite the large optical apertures. The soft x-ray lasing of nickel-like samarium was an important milestone for the feasibility of applying the pumping scheme also for higher pumping pulse energies, which are necessary to obtain soft x-ray laser wavelengths in the water window. The reduction of the total pump energy below 40 joule for 7.3 nanometer short wavelength lasing now fulfilled the requirement for the installation at the high-repetition rate operation laser facility LASERIX.rn

Photokathoden mit internem DBR-Reflektor als Quellen hochintensiver spinpolarisierter Elektronenstrahlen

Die Erzeugung von Elektronenstrahlen hoher Intensität (I$geq$2,mA) und hoher Spinpolarisation (P$geq$85%) ist für die Experimente an den geplanten glqq Linac Ringgrqq Electron--Ion--Collidern (z.B. eRHIC am Brookhaven National Laboratory) unabdingbar, stellt aber zugleich eine enorme Herausforderung dar. Die Photoemission aus ce{GaAs}--basierten Halbleitern wie z.B. den in dieser Arbeit untersuchten GaAlAs/InGaAlAs Quanten--Übergittern zeichnet sich zwar durch eine hohe Brillanz aus, die geringe Quantenausbeute von nur ca. 1% im Bereich maximaler Polarisation erfordert jedoch hohe Laserintensitäten von mehreren Watt pro $text{cm}^{2}$, was erhebliche thermische Probleme verursacht. rnrnIn dieser Arbeit konnte zunächst gezeigt werden, dass die Lebensdauer einer Photokathode mit steigender Laserleistung bzw. Temperatur exponentiell abnimmt. Durch Einbringen eines DBR--Spiegels zwischen die aktive Zone der Photokathode und ihr Substrat wird ein Großteil des ungenutzten Laserlichts wieder aus dem Kristall herausreflektiert und trägt somit nicht zur Erwärmung bei. Gleichzeitig bildet der Spiegel zusammen mit der Grenzfläche zum Vakuum eine Resonator--Struktur aus, die die aktive Zone umschließt. Dadurch kommt es für bestimmte Wellenlängen zu konstruktiver Interferenz und die Absorption in der aktiven Zone erhöht sich. Beide Effekte konnten durch vergleichenden Messungen an Kathoden mit und ohne DBR--Spiegel nachgewiesen werden. Dabei ergibt sich eine gute Übereinstimmung mit der Vorhersage eines Modells, das auf der dielektrischen Funktion der einzelnen Halbleiterstrukturen beruht. Von besonderer praktischer Bedeutung ist, dass die DBR--Kathode für einen gegebenen Photoemissions-strom eine um einen Faktor $geq$,3{,}5 kleinere Erwärmung aufweist. Dies gilt über den gesamten Wellenlängenbereich in dem die Kathode eine hohe Strahlpolarisation (P$>$80%) produzieren kann, auch im Bereich der Resonanz.rnAus zeitaufgelösten Messungen der Ladungsverteilung und Polarisation lassen sich sowohl Rückschlüsse über die Transportmechanismen im Inneren einer Kathode als auch über die Beschaffenheit ihrer Oberfläche ziehen. Im Rahmen dieser Dissertation konnte die Messgeschwindigkeit der verwendeten Apparatur durch den Einbau eines schnelleren Detektors und durch eine Automatisierung der Messprozedur entscheidend vergrößert und die resultierende Zeitauflösung mit jetzt 1{,}2 Pikosekunden annähernd verdoppelt werden.rnrnDie mit diesen Verbesserungen erhaltenen Ergebnisse zeigen, dass sich der Transport der Elektronen in Superlattice--Strukturen stark vom Transport in den bisher untersuchten Bulk--Kristallen unterscheidet. Der Charakter der Bewegung folgt nicht dem Diffusionsmodell, sondern gibt Hinweise auf lokalisierte Zustände, die nahe der Leitungsbandunterkante liegen und Elektronen für kurze Zeit einfangen können. Dadurch hat die Impulsantwort einer Kathode neben einem schnellen Abfall des Signals auch eine größere Zeitkonstante, die selbst nach 30,ps noch ein Signal in der Größenordnung von ca. 5textperthousand der Maximalintensität erzeugt.