Mixed finite-element methods for elliptic convection-dominated problems arising in semiconductor physics

In this work we develop and analyze an adaptive numerical scheme for simulating a class of macroscopic semiconductor models. At first the numerical modelling of semiconductors is reviewed in order to classify the Energy-Transport models for semiconductors that are later simulated in 2D. In this class of models the flow of charged particles, that are negatively charged electrons and so-called holes, which are quasi-particles of positive charge, as well as their energy distributions are described by a coupled system of nonlinear partial differential equations. A considerable difficulty in simulating these convection-dominated equations is posed by the nonlinear coupling as well as due to the fact that the local phenomena such as "hot electron effects" are only partially assessable through the given data. The primary variables that are used in the simulations are the particle density and the particle energy density. The user of these simulations is mostly interested in the current flow through parts of the domain boundary - the contacts. The numerical method considered here utilizes mixed finite-elements as trial functions for the discrete solution. The continuous discretization of the normal fluxes is the most important property of this discretization from the users perspective. It will be proven that under certain assumptions on the triangulation the particle density remains positive in the iterative solution algorithm. Connected to this result an a priori error estimate for the discrete solution of linear convection-diffusion equations is derived. The local charge transport phenomena will be resolved by an adaptive algorithm, which is based on a posteriori error estimators. At that stage a comparison of different estimations is performed. Additionally a method to effectively estimate the error in local quantities derived from the solution, so-called "functional outputs", is developed by transferring the dual weighted residual method to mixed finite elements. For a model problem we present how this method can deliver promising results even when standard error estimator fail completely to reduce the error in an iterative mesh refinement process.

Internally contracted multireference coupled-cluster methods

This thesis details the development of quantum chemical methods for the accurate theoretical description of molecular systems with a complicated electronic structure. In simple cases, a single Slater determinant, in which the electrons occupy a number of energetically lowest molecular orbitals, offers a qualitatively correct model. The widely used coupled-cluster method CCSD(T) efficiently includes electron correlation effects starting from this determinant and provides reaction energies in error by only a few kJ/mol. However, the method often fails when several electronic configurations are important, as, for instance, in the course of many chemical reactions or in transition metal compounds. Internally contracted multireference coupled-cluster methods (ic-MRCC methods) cure this deficiency by using a linear combination of determinants as a reference function. Despite their theoretical elegance, the ic-MRCC equations involve thousands of terms and are therefore derived by the computer. Calculations of energy surfaces of BeH2, HF, LiF, H2O, N2 and Be3 unveil the theory's high accuracy compared to other approaches and the quality of various hierarchies of approximations. New theoretical advances include size-extensive techniques for removing linear dependencies in the ic-MRCC equations and a multireference analog of CCSD(T). Applications of the latter method to O3, Ni2O2, benzynes, C6H7NO and Cr2 underscore its potential to become a new standard method in quantum chemistry.