Modeling multiple state electrostatically formed nanowire transistors

The present thesis work proposes a new physical equivalent circuit model for a recently proposed semiconductor transistor, a 2-drain MSET (Multiple State Electrostatically Formed Nanowire Transistor). It presents a new software-based experimental setup that has been developed for carrying out numerical simulations on the device and on equivalent circuits. As of 2015, we have already approached the scaling limits of the ubiquitous CMOS technology that has been in the forefront of mainstream technological advancement, so many researchers are exploring different ideas in the realm of electrical devices for logical applications, among them MSET transistors. The idea that underlies MSETs is that a single multiple-terminal device could replace many traditional transistors. In particular a 2-drain MSET is akin to a silicon multiplexer, consisting in a Junction FET with independent gates, but with a split drain, so that a voltage-controlled conductive path can connect either of the drains to the source. The first chapter of this work presents the theory of classical JFETs and its common equivalent circuit models. The physical model and its derivation are presented, the current state of equivalent circuits for the JFET is discussed. A physical model of a JFET with two independent gates has been developed, deriving it from previous results, and is presented at the end of the chapter. A review of the characteristics of MSET device is shown in chapter 2. In this chapter, the proposed physical model and its formulation are presented. A listing for the SPICE model was attached as an appendix at the end of this document. Chapter 3 concerns the results of the numerical simulations on the device. At first the research for a suitable geometry is discussed and then comparisons between results from finite-elements simulations and equivalent circuit runs are made. Where points of challenging divergence were found between the two numerical results, the relevant physical processes are discussed. In the fourth chapter the experimental setup is discussed. The GUI-based environments that allow to explore the four-dimensional solution space and to analyze the physical variables inside the device are described. It is shown how this software project has been structured to overcome technical challenges in structuring multiple simulations in sequence, and to provide for a flexible platform for future research in the field.

Functionals for TDDFT description of electron transport in nanostructures

La Teoria di Densità Funzionale (DFT) e la sua versione dipendente dal tempo (TDDFT) sono strumenti largamente usati per simulare e calcolare le proprietà statiche e dinamiche di sistemi con elettroni interagenti. La precisione del metodo si basa su una serie di approssimazioni degli effetti di exchange correlation fra gli elettroni, descritti da un funzionale della sola densità di carica. Nella presente tesi viene testata l'affidabilità del funzionale Mixed Localization Potential (MLP), una media pesata fra Single Orbital Approximation (SOA) e un potenziale di riferimento, ad esempio Local Density Approximation (LDA). I risultati mostrano capacità simulative superiori a LDA per i sistemi statici (curando anche un limite di LDA noto in letteratura come fractional dissociation) e dei progressi per sistemi dinamici quando si sviluppano correnti di carica. Il livello di localizzazione del sistema, inteso come la capacità di un elettrone di tenere lontani da sé altri elettroni, è descritto dalla funzione Electron Localization Function (ELF). Viene studiato il suo ruolo come guida nella costruzione e ottimizzazione del funzionale MLP.