Silicon oxide nitride (sion) films per applicazioni fotovoltaiche

La ricerca, negli ultimi anni, si è concentrata sullo studio di materiali con energy gap più ampio del silicio amorfo a-Si per ridurre gli assorbimenti parassiti all'interno di celle fotovoltaiche ad eterogiunzione. In questo ambito, presso l'Università di Costanza, sono stati depositati layers di silicon oxynitride amorfo a-SiOxNy. Le promettenti aspettative di questo materiale legate all'elevato optical gap, superiore ai 2.0 eV, sono tuttavia ridimensionate dai problemi intrinseci alla struttura amorfa. Infatti la presenza di una grande quantit a di difetti limita fortemente la conducibilita e aumenta gli effetti di degradazione legati alla luce. In quest'ottica, nella presente tesi, sono stati riportati i risultati di analisi spettroscopiche eseguite presso il Dipartimento di Fisica e Astronomia di Bologna su campioni di silicon oxynitride nanocristallino nc-SiOxNy, analisi che hanno lo scopo di osservare come la struttura nanocristallina influisca sulle principali proprieta ottiche e sulla loro dipendenza da alcuni parametri di deposizione.

Investigation of the reactivity of metal oxide catalysts for the gas-phase phenol methylation

The gas-phase phenol methylation with methanol was investigated both from catalitic and spectroscopic point of view. In particular, the work focus on the behavior of metal oxide catalysts, like iron(III) vanadate and aluminum vanadate. Spectroscopic studies include: X-ray diffraction and Raman analysis for catalyst charactrerization; Diffuse reflectance infrared fourier transform spectroscopy and in-situ Infrared spectroscopy in vacuum for investigation of interactions between reactants and surface of catalysts.

Non-linear modelling of microwave devices embedding nano-ferroelectric materials for real-time reconfigurable transmitarray

In this thesis work a nonlinear model for Interdigitated Capacitors (IDCs) based on ferroelectric materials, is proposed. Through the properties of materials such as Hafnium-Zirconium Oxide (HfZrO2), it is possible to realize tunable radiofrequency (RF) circuits. In particular, the model proposed in this thesis describes the use of an IDC, realized on a High-Resistivity silicon substrate, as a phase shifter for beam-steering applications. The model is obtained starting from already present experimental measurements, through which it is possible to identify a circuit model. The model is tested for both low power values and other power values using Harmonic Balance simulations, which show an excellent convergence of the model up to 40 dBm of input power. Furthermore, an array composed by two patches operating both at 2.55 GHz, which exploits the tunable properties of the HfZrO-based IDC is proposed. At 0dBm the model shows a 47° phase shift with polarization -1 V and 1 V which leads to a 11° steering of the main lobe of the array.

Determination of local density of states in amorphous oxide semiconductors with Kelvin Probe Force Microscopy

Amorphous semiconductors are important materials as they can be deposited by physical deposition techniques on large areas and even on plastic substrates. Therefore, they are crucial for transistors in large active matrices for imaging and transparent wearable electronics. The most widely applied candidate for amorphous thin film transistors production is Indium Gallium Zinc Oxide (IGZO). It is attracting much interest because of its optical transparency, facile processing by sputtering deposition and notable improved charge carrier mobility with respect to hydrogenated amorphous silicon a-Si:H. Degradation of the device and long-term performance issues have been observed if IGZO thin film transistors are subjected to electrical stress, leading to a modification of IGZO channel properties and subthreshold slope. Therefore, it is of great interest to have a reliable and precise method to study the conduction band tail, and the density of states in amorphous semiconductors. The aim of this thesis is to develop a local technique using Kelvin Probe Force Microscopy to study the evolution of IGZO DOS properties. The work is divided into three main parts. First, solutions to the non-linear Poisson-Boltzmann equation of a metal-insulator-semiconductor junction describing the charge accumulation and its relation to DOS properties are elaborated. Second macroscopic techniques such as capacitance voltage (CV) measurements and photocurrent spectroscopy are applied to obtain a non-local estimate of band-tail DOS properties in thin film transistor samples. The third part of my my thesis is dedicated to the KPFM measurements. By fitting the data to the developed numerical model, important parameters describing the amorphous conduction band tail are obtained. The results are in excellent agreement with the macroscopic characterizations. KPFM result is comparable also with non-local optoelectronic characterizations, such as photocurrent spectroscopy.