Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

Semi-engineered earthquake-resistant structures: one-storey buildings built up with gabion-box walls

This thesis studies the static and seismic behavior of simple structures made with gabion box walls. The analysis was performed considering a one-story building with standard dimensions in plan (6m x 5m) and a lightweight timber roof. The main focus of the present investigation is to find the principals aspects of the seismic behavior of a one story building made with gabion box walls, in order to prevent a failure due to seismic actions and in this way help to reduce the seismic risk of developing countries where this natural disaster have a significant intensity. Regarding the gabion box wall, it has been performed some calculations and analysis in order to understand the static and dynamic behavior. From the static point of view, it has been performed a verification of the normal stress computing the normal stress that arrives at the base of the gabion wall and the corresponding capacity of the ground. Moreover, regarding the seismic analysis, it has been studied the in-plane and out-of-plane behavior. The most critical aspect was discovered to be the out-of-plane behavior, for which have been developed models considering the “rigid- no tension model” for masonry, finding a kinematically admissible multiplier that will create a collapse mechanism for the structure. Furthermore, it has been performed a FEM and DEM models to find the maximum displacement at the center of the wall, maximum tension stresses needed for calculating the steel connectors for joining consecutive gabions and the dimensions (length of the wall and distance between orthogonal walls or buttresses) of a geometrical configuration for the standard modulus of the structure, in order to ensure an adequate safety margin for earthquakes with a PGA around 0.4-0.5g. Using the results obtained before, it has been created some rules of thumb, that have to be satisfy in order to ensure a good behavior of these structure.