Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Kinematics of the Sicily and Calabria Subduction System from Elastic Block Modeling of GPS Data

We use data from about 700 GPS stations in the EuroMediterranen region to investigate the present-day behavior of the the Calabrian subduction zone within the Mediterranean-scale plates kinematics and to perform local scale studies about the strain accumulation on active structures. We focus attenction on the Messina Straits and Crati Valley faults where GPS data show extentional velocity gradients of ∼3 mm/yr and ∼2 mm/yr, respectively. We use dislocation model and a non-linear constrained optimization algorithm to invert for fault geometric parameters and slip-rates and evaluate the associated uncertainties adopting a bootstrap approach. Our analysis suggest the presence of two partially locked normal faults. To investigate the impact of elastic strain contributes from other nearby active faults onto the observed velocity gradient we use a block modeling approach. Our models show that the inferred slip-rates on the two analyzed structures are strongly impacted by the assumed locking width of the Calabrian subduction thrust. In order to frame the observed local deformation features within the present- day central Mediterranean kinematics we realyze a statistical analysis testing the indipendent motion (w.r.t. the African and Eurasias plates) of the Adriatic, Cal- abrian and Sicilian blocks. Our preferred model confirms a microplate like behaviour for all the investigated blocks. Within these kinematic boundary conditions we fur- ther investigate the Calabrian Slab interface geometry using a combined approach of block modeling and χ2ν statistic. Almost no information is obtained using only the horizontal GPS velocities that prove to be a not sufficient dataset for a multi-parametric inversion approach. Trying to stronger constrain the slab geometry we estimate the predicted vertical velocities performing suites of forward models of elastic dislocations varying the fault locking depth. Comparison with the observed field suggest a maximum resolved locking depth of 25 km.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Strategie di personalizzazione della terapia di resincronizzazione cardiaca

Solo il 60% dei candidati alla resincronizzazione cardiaca risponde in termini di rimodellamento ventricolare inverso che è il più forte predittore di riduzione della mortalità e delle ospedalizzazioni. Due cause possibili della mancata risposta sono la programmazione del dispositivo e i limiti dell’ approccio transvenoso. Nel corso degli anni di dottorato ho effettuato tre studi per ridurre il numero di non responder. Il primo studio valuta il ritardo interventricolare. Al fine di ottimizzare le risorse e fornire un reale beneficio per il paziente ho ricercato la presenza di predittori di ritardo interventricolare diverso dal simultaneo, impostato nella programmazione di base. L'unico predittore è risultato essere l’ intervallo QRS> 160 ms, quindi ho proposto una flow chart per ottimizzare solo i pazienti che avranno nella programmazione ottimale un intervallo interventricolare non simultaneo. Il secondo lavoro valuta la fissazione attiva del ventricolo sinistro con stent. I dislocamenti, la soglia alta di stimolazione del miocardio e la stimolazione del nervo frenico sono tre problematiche che limitano la stimolazione biventricolare. Abbiamo analizzato più di 200 angiografie per vedere le condizioni anatomiche predisponenti la dislocazione del catetere. Prospetticamente abbiamo deciso di utilizzare uno stent per fissare attivamente il catetere ventricolare sinistro in tutti i pazienti che presentavano le caratteristiche anatomiche favorenti la dislocazione. Non ci sono più state dislocazioni, c’è stata una migliore risposta in termini di rimodellamento ventricolare inverso e non ci sono state modifiche dei parametri elettrici del catetere. Il terzo lavoro ha valutato sicurezza ed efficacia della stimolazione endoventricolare sinistra. Abbiamo impiantato 26 pazienti giudicati non responder alla terapia di resincronizzazione cardiaca. La procedura è risultata sicura, il rischio di complicanze è simile alla stimolazione biventricolare classica, ed efficace nell’arrestare la disfunzione ventricolare sinistra e / o migliorare gli effetti clinici in un follow-up medio.