Engenharia de microestrutura em varistor à base de ZnO: evidências de homogeneidade e correlação com reações químicas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influência de dopantes doadores na degradação do varistor à base de SnO2 e o efeito do oxigênio pós-degradação

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Evaluation of rare earth oxides doping SnO2.(Co1/4,Mn3/4)O-based varistor system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Low-voltage varistor based on (Sn,Ti)O-2 ceramics

A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.

Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Electrical and micro structural properties of (Zn, Nb, Fe)-doped SnO2 varistor systems

The electrical and microstructural properties of SnO2-based varistors with the addition of 0.025 and 0.050 mol% of Fe2O3 have been characterised. Electric field (E) versus current density (J) curves showed that the effect of Fe2O3 addition is to increase both the non-linear coefficient and the breakdown voltage. Variations in the potential barrier height were inferred from impedance spectroscopy (IS) analysis. Through transmission electron microscopy (TEM), the presence of precipitates of secondary phases was confirmed. Samples with precipitates displayed poor electrical properties. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

The influence of yttrium on a typical SnO2 varistor system: Microstructural and electrical features

The influence of yttrium oxide, Y2O3, on the microstructure development of the SnO(2)center dot Co(3)O(4)center dot Nb2O5 typical varistor system was studied with scanning (SEM) and transmission (TEM) electron microscopies. The different phases present in the studied samples were characterized through XRD, EDS and selected area diffraction patterns (SAD). Particles of Co2SnO4 were observed with TEM in every sample, whereas clusters of the pyrochlore phase T2Sn2O7 were observed with SEM in samples with 0.05, 0.10 and 0.25 mol% of Y2O3. The higher non-linearity (a = 16) was achieved with the addition of 0.05 mol% of Y2O3. The influence of the secondary phases on the electrical properties is also addressed in this work. (c) 2005 Published by Elsevier B.V.

Investigation of the electrical properties of SnO2 varistor system using impedance spectroscopy

The electrical properties of tin oxide varistors doped with CoO, Nb2O5 and Cr2O3, were investigated using the impedance spectroscopy technique with the temperature ranging from 25 to 400 degrees C. The impedance data, represented by means of Nyquist diagrams, show two time constants with different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. The Arrhenius plots show two slopes with a turnover at 200 degrees C for both the higher and lower frequency time constants. This behavior can be related with the decrease of minor charge carrier density. The barrier formation mechanism was associated with the presence of Cr-Sn at the surface, which promotes the adsorption of the O' and O species which are in turn proposed as being responsible for the barrier formation. (C) 1998 American Institute of Physics. [S0021-8979(98)04719-7]

Effect of Fe2O3 doping on the electrical properties of a SnO2 based varistor

The effect of Fe2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01CoO + 0.005Nb(2)O(5) + xFe(2)O(3) system, where x = 0.005 or 0.01, was considered in this study. The samples were sintered at 1300degreesC for 2 h. Microstructure analysis by scanning electron microscopy showed that the effect of Fe2O3 addition is to decrease the SnO2 grain size. J x E curves indicated that the system exhibit a varistor behavior and the effect of Fe2O3 is to increase both, the non-linear coefficient (alpha) and the breakdown voltage (E-r). Considering the Schottky thermionic emission model the potential height and width were estimated. Small amount addition of Fe2O3 to the basic system increases both the potential barrier height and width. (C) 2002 Kluwer Academic Publishers.

Influence of the common varistor dopants (CoO, Cr2O3 and Nb2O5) on the structural properties of SnO2 ceramics

The influence of dopants commonly used in SnO2 varistor ceramics, such as CoO, Cr2O3 or Nb2O5, on the structural properties of SnO2 was investigated. Several SnO2-based ceramics containing only one of the dopants were prepared and characterized. Spectroscopic investigations [visible, near infrared (IR) and IR region] were performed to obtain information about dopants valence states inside the ceramics, as well as about their influence on electronic structure of the material. Structural properties were investigated by X-ray diffraction analysis and mechanisms of dopant incorporation were proposed. Obtained results were confirmed with results of the electrical measurements. Microstructural changes in doped ceramics were investigated by scanning electron microscopy (SEM) analysis that showed great differences in densities, grain size, and morphology of the SnO2 ceramics depending on type of dopants and their distribution. (C) 2004 Published by Elsevier B.V.

How Cr2O3 influences the microstructure and nonohmic features of the SnO2(COx, Mn1-x)O-based varistor system

An investigation was made to discover how the addition of Cr2O3 affects the microstructural heterogeneity and nonohmic features of the SnO2(Co-x, Mn1-x)O-based varistor system, with x varying from 0 to 1. The presence of Cr2O3 was found to strongly increase the nonohmic features when x = 1. However, the nonohmic features of the system decrease when x drops from 1 to 0, a behavior explained by the increase of the junction heterogeneity within the system's microstructure. accompanied by ail excess of precipitates at the triple point in the grain boundary region due to modified MnO sintering. The presence of these precipitates causes the leakage current to increase in response to the creation of ail ineffective barrier. The effect produced by heat-treating these systems in oxygen- and nitrogen-rich atmospheres suggests that, according to mechanisms previously discussed in the literature, Cr2O3 is more susceptible to oxygen, so that increasing the amount of oxygen in the grain boundary region may improve the system's nonohmic properties. (c) 2005 Elsevier Ltd. All rights reserved.

Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

The tin dioxide is an n-type semiconductor, which exhibits varistor behavior with high capacity of absorption of energy, whose function is to restrict transitory over-voltages without being destroyed, when it is doped with some oxides. Varistors are used in alternated current fields as well as in continuous current, and it can be applied in great interval of voltages or in great interval of currents. The electric properties of the varistor depend on the defects that happen at the grain boundaries and the adsorption of oxygen. The (98.90-x)%SnO2.0.25%CoO+0.75%MnO2+0.05%Ta2O5+0.05%Tr2O3 systems, in which Tr=La or Nd. Current-voltage measurements were accomplished for determination of the non-linear coefficient were studied. SEM microstructure analysis was made to evaluate the microstructural characteristics of the systems. The results showed that the rare-earth oxides have influenced the electrical behavior presented by the system. (C) 2002 Kluwer Academic Publishers.

The influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistor

The non-ohmic properties of the 98.95% SnO2 + 1.0 CoO + 0.05 Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (alpha = 32) was obtained for a sintering temperature of 1300 degrees C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole-Frenkel types.