A high dynamic range method for the direct readout of a dynamic phase change in homodyne interferometers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nano-displacement measurements of a new piezoelectric flextensional actuator by using a high dynamic range interferometry homodyne method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Wide dynamic range homodyne interferometry method and its application for piezoactuator displacement measurements

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A simplified and higher dynamic range version of the J(1) ... J(4) method for optical phase measurements

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A multisampling time-domain CMOS imager with synchronous readout circuit

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Avaliação do uso de imagens HDR no estudo de iluminação

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Determination of Total Sulfur in Agricultural Samples by High-Resolution Continuum Source Flame Molecular Absorption Spectrometry

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An algorithmic of analog-to-digital converter using current-mode and digital CMOS process

In this paper a new algorithmic of Analog-to-Digital Converter is presented. This new topology use the current-mode technique that allows a large dynamic range and can be implemented in digital CMOS process. The ADC proposed is very small and can handle high sampling rates. Simulation results using a 1.2um CMOS process show that an 8-b ADC can support a sampling rate of 50MHz.

A tunable triode-MOSFET transconductor and its application to g(m)-C filters

A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order linear relationship between g(m) and a de bias voltage is achieved. In addition to easy tuning, this technique offers circuit simplicity, wide dynamic range, high input and output impedances and low consumption. The transconductor is presented on both single-ended and fully-differential versions. A 3rd-order elliptical low-pass g(m)-C filter with a nominal roll-off frequency of 2MHz is used as one example for the many applications of the proposed transconductor. SPICE data describe circuits performances and filter tunabilily Passband is tuned at a rate of 2.36KHz/mV and good linearity is indicated by a 0.89% THD for an 800mV(p-p) balanced-driven input.

Linear readout of dynamic phase modulation index in an optical voltage sensor using the new J(1) ... J(3) spectral method

The J(1)...J(3) is a recent optical method for linear readout of dynamic phase modulation index in homodyne interferometers. In this work, the J(1)... J(3) method is applied to measure voltage in an optical voltage sensor. Based on the classical J(1)...J(4) method, the J(1)... J(3) technique shows to be more stable to phase drift and simpler for implementation than the original one. The sensor dynamic range is enhanced. The agreement between theoretical and experimental results, based on 1/f noise, is demonstrated.

Damage Characterization Using Guided-Wave Linear Arrays and Image Compounding Techniques

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of the modifier on the short and long range disorder of stannate perovskites

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A multisampling time-domain CMOS imager with synchronous readout circuit

A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The architecture was implemented in a prototype of imager with 32x32 pixel array fabricated in AMS CMOS 0.35νm and was characterized for sensitivity and color response. The pixel is composed of an n+/psub photodiode, a comparator and a D flip-flop having 16% fill-factor and 30νmx26νm dimensions. The multisampling architecture requires only a 1 bit per pixel memory instead of 8 bits which is typical for time-domain active pixel architectures. The advantage is that the number of transistors in the pixel is low, saving area and providing higher fill-factor. The maximum frame rate is analyzed as a function of number of bits and array size. The analysis shows that it is possible to achieve high frame rates and operation in video mode with 10 bits. Also, we present analysis for the impact of comparator offset voltage in the fixed pattern noise. Copyright 2007 ACM.

Análise teórica e experimental de um método interferométrico de detecção de fase óptica, auto-consistente e com elevada faixa dinâmica, aplicado à caracterização de atuadores piezoelétricos flextensionais

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)