19 resultados para optoelectronics

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

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This paper presents the fabrication and analysis of a three-dimensional FCC photonic crystal (PhC) based on a self-assembly synthesis of monodispersive latex spheres. Experimental optical characterization, achieved by measurements of the specular reflectance under variable angles, indicated the clear presence of a Bragg diffraction pattern. Results are further explored by theoretical calculations based on the Finite Difference Time Domain (FDTD) method to determine the full PhC band structure.

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New glass forming systems based on Sb2O3-SbPO4 has been explored. These glasses present higher thermal stability against devitrification and higher refractive index than chalcogenide glasses. Under irradiation, using Ar-laser 350nm wavelength and 50 mW power density, change on the coloration is observed. Structural and electronic modifications around Sb cations induced by such treatment have been characterized by XANES measurements at the L-Sb edges. on the one hand, XANES spectra, at the LJ edge, show a decrease of the coordination number for Sb atoms induced by exposure to light indicating a breaking of Sb-O bonds in the glassy network. on the other hand, XANES spectra, at the Lt edge, suggest a change in the oxidation state of Sb atoms. These modifications associated to the photodarkening of the glass is reversible either after a couple of days or after heating the glass at the glass transition temperature, T-g.

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The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm (-1)) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings.

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Glasses and glass-ceramics have been obtained in oxyfluoride systems involving lead and cadmium fluorides and one of the well-known glass former oxides SiO2, B2O3 and TeO2. Vitreous domains were established and a wide range of compositions including high heavy metal contents lead to stable glasses. Amorphous structures have been studied by short-range order spectroscopy techniques (Raman scattering and x-ray absorption) and molecular basic structures have been identified. Besides the usual oxides, the role of glass former could also be proposed for cadmium ions. Special attention has been paid for crystallization process. Cubic lead fluoride, cubic lead tellurite, tetragonal tellurium oxide and a solid solution of the type Pb1-xCdxF2 are obtained as crystallization products depending on the composition and temperature of heat treatments. Pb1-xCdxF2 solid solutions are well known superionic materials and obtaining this solid solution as a crystal phase could be very interesting for applications concerning ionic electrical conduction properties. The addition of rare earth ions led to the control of the crystallization process. In the presence of the nucleating ion only the cubic form beta-PbF2 was identified. Rare earth ions are present in the crystal phase and crystal-like spectroscopic properties were observed suggesting interesting applications for these perfectly transparent glass ceramics in photonics.

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The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

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The J(1)...J(3) is a recent optical method for linear readout of dynamic phase modulation index in homodyne interferometers. In this work, the J(1)... J(3) method is applied to measure voltage in an optical voltage sensor. Based on the classical J(1)...J(4) method, the J(1)... J(3) technique shows to be more stable to phase drift and simpler for implementation than the original one. The sensor dynamic range is enhanced. The agreement between theoretical and experimental results, based on 1/f noise, is demonstrated.

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This work presents a review of recent developments in phase-stepping real-time holographic interferometry with photorefractive sillenite crystals. Quantitative results are shown in micro-rotation, micro-displacement, and micro-deformation measurements, and in wave-optics and surface analysis as well. The phase stepping was carried out in a four-frame process and the resulting phase map was unwrapped by applying a sin/cos filter. The experimental results are in good agreement with the ones obtained through other means, showing the promising potentialities of phase-stepping real-time holographic interferometry for in situ visualisation, monitoring and analysis in non-destructive testing.

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In this paper, the influence on optical properties of alkali halides such as CsCl in a covalent glassy matrix has been investigated. Chalcogenide glasses belonging to the (GeS2)-(Ga2S3)-CsCI system with high ratio of CsCl present an entire transparency in the visible range. These glasses maintain good transmission up to 12 mu m. Furthermore, the thermo-mechanical properties and the glass hygroscopicity have been investigated as function of the CsCl amount. This new generation of glasses presents a great interest for optical application. They could be used both for passive applications (multi-spectral imaging) and active applications for rare-earth doping due to their good transmission in the visible range, increasing optical pumping possibilities.

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In this paper, we describe the preparation of glass ceramics in the Ga2S3 - GeS2 - CsCl system Visible and infrared transmitting glass ceramics were reproducibly obtained by appropriated heat treatment of the base glass Crystals with controllable size of about 40 nm were homogeneously generated in the glassy matrix X-ray diffraction characterizations have shown that gallium acts as nucleating agent in this material, giving rise to alpha-Ga2S3 crystals Improved thermo-mechanical properties such as dilatation coefficient and resistance to fracture propagation have been observed in the prepared glass ceramics

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The need for low-chirp and compact transmitters for high-bit-rate optical links has led to the development of integrated laser electroabsorption modulators (ILM). We have investigated feedback effects inducing frequency chirp by developing a model treating the ILM as a whole and obtained analytical expressions of the FM and AM responses. The variation of the frequency chirp with the residual facet reflectivity of the modulator section is calculated. The model predicts the unusual peak in the measured frequency responses and has been used to define design rules.

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The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

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This papers presents results on the variation of the PMD coefficient of optical links under influence of mechanical tests, such as tensile strength, bending and compression, and also during the application of a thermal cycle. Results revealed that the link coefficient is more influenced by the application of a tension load and also suffers significant variation under strong temperature changes. Copyrigth © SBMO.

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We report the use of organic-inorganic sol-gel derived poly(oxyehylene)/ siloxane hybrid doped with methacrylic acid modified zirconium (IV) n-propoxide for the fabrication of low cost waveguides trough direct UV laser writing. The organic-inorganic hybrids were processed as monoliths with size and shape control. The effective guiding region was identified and the number of modes was estimated via mode field analyses. A grating was successfully superimposed on the channel and the respective reflection spectrum was measured, enabling the determination of the guiding region dimension, the calculation of the effective refractive index of the guided mode. © 2007 IEEE.