Electrically detected magnetic resonance modeling and fitting: An equivalent circuit approach

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Analysis of the Al-PANI interfaces by complex impedance spectroscopy

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Impedance spectroscopy analysis of SnO2 thick-films gas sensors

A careful analysis of the impedance response of SnO2 thick films under vacuum and air atmosphere is reported in the present work. The AC electrical resistance was analyzed and it was shown that it is highly frequency dependent. Different models and its equivalent circuit representation were proposed and carefully analyzed based on the microstructure features of the device. Basically, an interpretation of the frequency dependent resistance was proposed based on the fact that different grains characteristics and junctions exist. These different grains and junctions are the main source of resistance dependent feature. An equivalent circuit model, considering different grain sizes associated with different grain boundary junctions characteristics, was introduced so that a consistent interpretation of the results was possible.

Characteristics of Dielectric Barrier Discharge Reactor for Material Treatment

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Elucidating capacitance and resistance terms in confined electroactive molecular layers

Electrochemical analyses on confined electroactive molecular layers, herein exemplified with electroactive self-assembled monolayers, sample current contributions that are significantly influenced by additional nonfaradaic and uncompensated resistance effects that, though unresolved, can strongly distort redox analysis. Prior work has shown that impedance-derived capacitance spectroscopy approaches can cleanly resolve all contributions generated at such films, including those which are related to the layer dipolar/electrostatic relaxation characteristics. We show herein that, in isolating the faradaic and nonfaradaic contributions present within an improved equivalent circuit description of such interfaces, it is possible to accurately simulate subsequently observed cyclic voltammograms (that is, generated current versus potential patterns map accurately onto frequency domain measurements). Not only does this enable a frequency-resolved quantification of all components present, and in so doing, a full validation of the equivalent circuit model utilized, but also facilitates the generation of background subtracted cyclic voltammograms remarkably free from all but faradaic contributions. © 2012 American Chemical Society.

Estudo das variações elétricas em filmes ultrafinos compondo as unidades sensoriais de uma língua eletrônica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvendo competências e habilidades na sala de aula de física

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Representation of transmission lines: comparison of models and parameters distributed discrete parameters

A transmission line is characterized by the fact that its parameters are distributed along its length. This fact makes the voltages and currents along the line to behave like waves and these are described by differential equations. In general, the differential equations mentioned are difficult to solve in the time domain, due to the convolution integral, but in the frequency domain these equations become simpler and their solutions are known. The transmission line can be represented by a cascade of π circuits. This model has the advantage of being developed directly in the time domain, but there is a need to apply numerical integration methods. In this work a comparison of the model that considers the fact that the parameters are distributed (Universal Line Model) and the fact that the parameters considered concentrated along the line (π circuit model) using the trapezoidal integration method, and Simpson's rule Runge-Kutta in a single-phase transmission line length of 100 km subjected to an operation power. © 2003-2012 IEEE.

Alternative Model of Three-Phase Transmission Line Theory-Based Modal Decomposition

In this paper is shown the development of a transmission line, based on discrete circuit elements that provide responses directly in the time domain and phase. This model is valid for ideally transposed rows represent the phases of each of the small line segments are separated in their modes of propagation and the voltage and current are calculated at the modal field. However, the conversion phase-mode-phase is inserted in the state equations which describe the currents and voltages along the line of which there is no need to know the user of the model representation of the theory in the field lines modal.

Proposal of a Transmission Line Model Based on Lumped Elements: An Analytic Solution

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Circuit board accident - organizational dimension hidden by prescribed safety

This study analyzes an accident in which two maintenance workers suffered severe burns while replacing a circuit breaker panel in a steel mill, following model of analysis and prevention of accidents (MAPA) developed with the objective of enlarging the perimeter of interventions and contributing to deconstruction of blame attribution practices. The study was based on materials produced by a health service team in an in-depth analysis of the accident. The analysis shows that decisions related to system modernization were taken without considering their implications in maintenance scheduling and creating conflicts of priorities and of interests between production and safety; and also reveals that the lack of a systemic perspective in safety management was its principal failure. To explain the accident as merely non-fulfillment of idealized formal safety rules feeds practices of blame attribution supported by alibi norms and inhibits possible prevention. In contrast, accident analyses undertaken in worker health surveillance services show potential to reveal origins of these events incubated in the history of the system ignored in practices guided by the traditional paradigm.

On non-linear dynamics and an optimal control synthesis of the action potential of membranes (ideal and non-ideal cases) of the Hodgkin-Huxley (HH) mathematical model

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effectiveness-ntu computation with a mathematical model for cross-flow heat exchangers

Due to the wide range of design possibilities, simple manufactured, low maintenance and low cost, cross-flow heat exchangers are extensively used in the petroleum, petrochemical, air conditioning, food storage, and others industries. In this paper a mathematical model for cross-flow heat exchangers with complex flow arrangements for determining epsilon -NTU relations is presented. The model is based on the tube element approach, according to which the heat exchanger outlet temperatures are obtained by discretizing the coil along the tube fluid path. In each cross section of the element, tube-side fluid temperature is assumed to be constant because the heat capacity rate ratio C*=Cmin/Cmax tends toward zero in the element. Thus temperature is controlled by effectiveness of a local element corresponding to an evaporator or a condenser-type element. The model is validated through comparison with theoretical algebraic relations for single-pass cross-flow arrangements with one or more rows. Very small relative errors are obtained showing the accuracy of the present model. epsilon -NTU curves for several complex circuit arrangements are presented. The model developed represents a useful research tool for theoretical and experimental studies on heat exchangers performance.

Design of a CMOS voltage reference using current-model approach

A voltage reference with low sensibility to temperature and power-supply that can generate flexible reference values (from milivolts to several volts) is proposed. Designed for AMS 0.35μm CMOS process, the circuit provides a stable output voltage working in the temperature range of -40-150°C. The proposed reference provides a nominal output voltage of 1.358V with a power-supply of 3.3V. © 2011 IEEE.