12 resultados para bismuth copper oxides

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Anodic aluminium oxide (AAO) films exhibiting a homogeneous morphology of parallel pores perpendicular to the surface were prepared in a two-step anodization process and filled with copper by electrochemical deposition. The optimum growth conditions for the formation of freestanding AAO films with hexagonal compact array of cylindrical pores were studied by field emission scanning electron microscopy and small angle X-ray scattering. The results show well-defined periodic structures with uniform pores size distribution for films with pore diameters between 40 and 70 nm prepared using different voltages and temperatures during the second anodization step. X-ray photoelectron spectroscopy and X-ray diffraction analysis of AAO films filled with copper show the formation of nanowires with high structural order, exhibiting a preferential crystalline orientation along the (2 2 0) axis and only small fraction of copper oxides. The best results for textured Cu nanowires were obtained at a reduction potential of -300 mV. (C) 2009 Elsevier Ltd. All rights reserved.

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Since the discovery of YBaCuO, experiments have shown that its superconducting properties are strongly affected by the oxygen content. More recently, anelastic relaxation measurements in La2CuO4+δ, showed that the decrease in the oxygen content can be related to two events. One is the decrease in mobility between two adjacent CuO planes, and the other is the increase in the number of tilting patterns of the CuO6 octahedra. In the case of the bismuth-based ceramic, it is known that the oxygen content, within some limits, does not affect its superconducting properties. In order to evaluate the mobility and the effect of the oxygen content on this material we have prepared BSCCO ceramic and tested regarding its internal friction and electrical resistivity as a function of the temperature while the oxygen content was being reduced by a sequence of vacuum annelaing at 620 K. The samples were prepared in the Bi:Sr:Ca:Cu = 2212 and 2223 proportion, using powder obtained by the sol-gel route and conventional solid state reaction. The anelastic relaxation measurements were performed using a torsion pendulum operating with frequency about 15-35 Hz between 77 to 700 K. The diffraction pattern of the as sintered and the vacuum annealed material were also presented. The results have shown complex anelastic relaxation structures that were associated to the jump of interstitial oxygen atoms between two adjacent CuO planes. The vacuum annealing showed to be deleterious to the critical temperature of the superconducting ceramic.

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Many researchers became interested in the discovery of Bi(2)Sr(2)CaCu(2)O(8+delta) oxides with critical temperature of around 80 K. It is known that the critical temperature is related to the CuO2 planes of the material. For this reason, the study of the interstitial oxygen in these oxides is of great relevance. The samples were prepared by means of conventional solid state reactions, through the stoichiometric mixture of precursory powders. After the sinterization, the samples were submitted to measurements of density, electrical resistivity, x-ray diffraction, scanning electron microscopy and energy dispersion spectroscopy, with the objective of performing their characterization. The measurements of mechanical spectroscopy were performed by a torsion pendulum. The results show three relaxation processes in the temperature range of 200 and 700 K, with activation energy of approximately 0.9 eV, which has been attributed to the dynamics of the interstitial oxygen present in the material.

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A Fault Current Limiter (FCL) based on high temperature superconducting elements with four tapes in parallel were designed and tested in 220 V line for a fault current peak between 1 kA to 4 kA. The elements employed second generation (2G) HTS tapes of YBCO coated conductor with stainless steel reinforcement. The tapes were electrically connected in parallel with effective length of 0.4 m per element (16 elements connected in series) constituting a single-phase unit. The FCL performance was evaluated through over-current tests and its recovery characteristics under load current were analyzed using optimized value of the shunt protection. The projected limiting ratio achieved a factor higher than 4 during fault of 5 cycles without degradation. Construction details and further test results will be shown in the paper. © 2010 IOP Publishing Ltd.

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In this work, we report on the evaluation of a superconducting fault current limiter (SFCL). It is consisted of a modular superconducting device combined with a short-circuited transformer with a primary copper winding connected in series to the power line and the secondary side short-circuited by the superconducting device. The basic idea is adding a magnetic component to contribute to the current limitation by the impedance reflected to the line after transition of the superconducting device. The evaluation tests were performed with a prospective current up to 2 kA, with the short-circuited transformer of 2.5 kVA, 220 V/660 V connected to a test facility of 100 kVA power capacity. The resistive SFCL using a modular superconducting device was tested without degradation for a prospective fault current of 1.8 kA, achieving the limiting factor 2.78; the voltage achieved 282 V corresponding to an electric field of 11 V/m. The test performed with the combined SFCL (xsuperconducting device + transformer) using series and toroidal transformers showed current limiting factor of 3.1 and 2 times, respectively. The test results of the combined SFCL with short-circuited transformer showed undesirable influence of the transformer impedance, resulting in reduction of the fault current level. © 2002-2011 IEEE.

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The development of gas sensors with innovative designs and advanced functional materials has attracted considerable scientific interest given their potential for addressing important technological challenges. This work presents new insight towards the development of high-performance p-type semiconductor gas sensors. Gas sensor test devices, based on copper (II) oxide (CuO) with innovative and unique designs (urchin-like, fiber-like, and nanorods), are prepared by a microwave-assisted synthesis method. The crystalline composition, surface area, porosity, and morphological characteristics are studied by X-ray powder diffraction, nitrogen adsorption isotherms, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. Gas sensor measurements, performed simultaneously on multiple samples, show that morphology can have a substantial influence on gas sensor performance. An assembly of urchin-like structures is found to be most effective for hydrogen detection in the range of parts-per-million at 200 °C with 300-fold larger response than the previously best reported values for semiconducting CuO hydrogen gas sensors. These results show that morphology plays an important role in the gas sensing performance of CuO and can be effectively applied in the further development of gas sensors based on p-type semiconductors. High-performance gas sensors based on CuO hierarchical morphologies with in situ gas sensor comparison are reported. Urchin-like morphologies with high hydrogen sensitivity and selectivity that show chemical and thermal stability and low temperature operation are analyzed. The role of morphological influences in p-type gas sensor materials is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

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Ore mines installed in the lower-middle portion of Ribeira de Iguape River (São Paulo State, southeastern Brazil), together with the Panelas Plant are responsible for the contamination of the Iguape-Cananeia-Paranagua lagoon-estuarine complex. The lower-middle portion of Grande Creek Basin, located in the district of Adrianopolis (Parana State, southern Brazil) is under environmental impact because of mining activities. The mines of Perau, at Perau Creek, Canoas at Canoas Creek, and Barrinha at Barrinha Creek and Laranjal Creek have been paralyzed. The transport of lead in fluvial sediments is mainly associated with organic matter, carbonates, the residual fraction, and adsorbables, whereas the transport of zinc is associated with the organic and residual fraction, oxides and hydroxides of iron and manganese, carbonate, and adsorbables. The transport of copper is associated with the residual fraction and oxides and hydroxides of iron and manganese, organic matter, carbonate, and adsorbables.

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Bismuth titanatc-Bi(4)Ti(3)O(12) (BIT) with wide application in the electronic industry as capacitors, memory devices and sensors is the simplest compound in the Aurivillius family, which consists of (Bi(2)O(2))(2+) sheets alternating with (Bi(2)T(i)3O(10))(2-) perovskite-like layers. The synthesis of more resistive BIT ceramics would be preferable advance in obtaining of well-densified ceramic with small grains randomly oriented to limit the conductivity along the (Bi(2)O(2))(2+) layers. Having in mind that the conventional ceramic route for the synthesis can lead to non-stoichiometry in composition, in consequence of the undesirable loss in bismuth content through volatilization of Bi(2)O(3) at elevated temperature, our efforts were addressed to preparation of BIT by mechanical activation the constituent oxides. The nucleation and phase formation of BIT, crystal structure, microstructure, powder particle size and specific surface area were followed by XRD, Rietveld refinement analysis, thermal analysis, scanning electron microscopy (SEM) and the BET specific surface area measurements. (c) 2005 Elsevier B.V. All rights reserved.

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Systematic studies in manganites of spinel structure have been undertaken. We report on the magnetic properties of two particular cases, in which one of the transition metals, Mg2+ is non-magnetic (NiMgxMn2-xO4) or presents a stable oxidation state, Cu2+ (CoxCuyMnzO4, x + y + z = 3). The magnetic behaviour is described with respect to varying contents of cobalt, copper or manganese. A ferrimagnetic transition is observed at 110-120 K, which depends on the cobalt content. Presence of copper increases the coercive field by a factor of ten with respect to the parent compound NiMn2O4. (c) 2006 Elsevier B.V. All rights reserved.

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The electrochemical behaviour of Cu, Cu-Al and Cu-Al-Ag alloys in aqueous solutions of NaCl (0.5 M, pH = 3.00) was studied by means of voltammetric methods and electrochemical impedance spectroscopy. The surfaces were examined by SEM and EDX analysis. Cu-Al-Ag alloy shows a potentiodynamic behaviour similar to that of the pure copper electrode while the Cu-Al alloy presents some minor differences. In the active dissolution region the electrodes suffer pitting corrosion and in the other potential regions there are the formation of a passivant film with composition depending on the potential. The impedance responses of the electrodes are discussed. An electrodissolution mechanism is proposed and the effect of the alloying elements upon the impedance response and polarisation curves is explained. The main effects are due to the production of copper and silver chlorides and aluminium oxides/ hydroxides at the corroding interface. The addition of Al or (Al + Ag) increases the corrosion resistance of pure copper. © 1995.

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A structural study of CuO supported on a CeO2-TiO2 system was undertaken using X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) techniques. The results of XRD revealed the presence of only two phases, TiO2 anatase and CeO2 cerianite. A trend towards smaller TiO2 crystallites was observed when cerium content increased. When the amount of cerium increased, Ti K-edge XANES analysis showed an increasing distortion of Ti sites. The results of Ce LIII-edge EXAFS showed that Ce atoms are coordinated by eight oxygen atoms at 2.32 Å. For the sample containing a small amount of cerium, the EXAFS analysis indicated that the local structure around Ce atoms was highly distorted. The catalysts presented quite different Cu K-edge XANES spectra compared to the spectra of the CuO and Cu2O reference compounds. The Cu-O mean bond length was close to that of the CuO and the Cu atoms in the catalysts are surrounded by approximately four oxygen atoms in their first shell. Copper supported on the ceria-modified titania support catalysts displayed a better performance in the methanol dehydrogenation when compared to copper supported only on titania or on ceria. © 2002 Plenum Publishing Corporation.