Electric characterization of a hybrid composite based on POMA/P(VDF- TrFE)/Zn2SiO4 : Mn using impedance spectroscopy

Understanding the microscopic origin of the dielectric properties of disordered materials has been a challenge for many years, especially in the case of samples with more than one phase. For polar dielectrics, for instance, the Lepienski approach has indicated that the random free energy barrier model of Dyre must be extended. Here we analyse the dielectric properties of a polymer blend made up with the semiconducting poly(o-methoxyaniline) and poly( vinylidene fluoride-trifluorethylene) POMA/P(VDF-TrFE), and of a hybrid composite of POMA/P(VDF-TrFE)/Zn2SiO4:Mn. For the blend, the Lepienski model, which takes into account the rotation or stretching of electric dipoles, provided excellent fitting to the ac impedance data. Because two phases had to be assumed for the hybrid composite, we had to extend the Lepienski model to fit the data, by incorporating a second transport mechanism. The two mechanisms were associated with the electronic transport in the polymeric matrix and with transport at the interfaces between Zn2SiO4: Mn microparticles and the polymeric matrix, with the relative importance of the interfacial component increasing with the percentage of Zn2SiO4: Mn in the composite. The analysis of impedance data at various temperatures led to a prediction of the theoretical model of a change in morphology at 190 +/- 40 K, and this was confirmed experimentally with a differential scanning calorimetry experiment.

Desenvolvimento e caracterização de dispositivos eletroluminescentes contendo uma blenda polimérica condutora e Zn2SiO4:Mn

Despite the great development of organic and polymeric electroluminescent materials, the large scale commercial application of devices made with these materials seems conditioned to specific cases, mainly due to the high cost and the low durability, in compared to conventional technologies. In this study was produced electroluminescent devices by a process simple, drop casting. Were produced electroluminescent films containing Zn2SiO4:Mn immersed in a conductive polymer blend with different thicknesses. The morphological characteristics of these films were studied by scanning electronic microscopy. These films were used in the manufacture of electroluminescent devices, in which the light emission properties of the developed material were evaluated. The blend was composed of the conductive polymer Poly(o-methoxyaniline), doped with p-toluene sulfonic acid, and an insulating polymer, Poly(vinylidene fluoride) and its copolymer Poly(vinylidene fluoride-cotrifluoroethylene). To this blend was added Zn2SiO4:Mn, thereby forming the composite. A first set of devices was obtained using composites with different weight fraction of polymeric and inorganic phases, which were deposited by drop casting over ITO substrates. Upper electrodes of aluminum were deposited by thermal evaporation. The resulting device architecture was a sandwich type structure ITO/ composite/ Al. A second set of devices was obtained as self-sustaining films using the best composite composition obtained for the device of the first set. ITO electrodes were deposited by RF-Sputtering, in both faces of these films. The AC electrical characterization of the devices was made with impedance spectroscopy measurements, and the DC electrical characterization was performed using a source/ meter unit Keithley 2410. The devices light emission was measured using a photodiode coupled to a digital electrometer, Keithley 6517A. The devices electrooptical characterization showed that the...

Fabrication of novel light-emitting devices based on green-phosphor/conductive-polymer composites

We report on light-emitting devices based on a green-phosphor compound (Mn-doped zinc silicate, Zn2SiO4: Mn) dispersed in a conductive polymeric blend (poly-o-methoxyaniline/polyvinylene fluoride, POMA/PVDF-TrFE). The devices exhibited high luminance in the green, good stability and homogeneous brilliance over effective areas up to 5 cm(2). The electroluminescence (EL) spectrum presented essentially the same characteristics as the photoluminescence (PL) and cathodoluminescence spectra, indicating that the light emission originates from decay of the same excited species, regardless of the excitation source. Operating characteristics were analyzed with current density - voltage (J - V) and luminance voltage ( L - V) curves to investigate the nature of the electroluminescence of the active material, which is still not completely understood.

Desenvolvimento e caracterização de dispositivos luminescentes híbridos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades elétro-óptica de dispositivos eletroluminescentes confeccionados com um compósito híbrido

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de um sistema para caracterização de dispositivos eletroluminescentes

The materials designed to be used in electroluminescent (EL) devices construction are studied and improved since 1936. Great interests in the development of this kind of devices are mainly due to its low power consumption, flexibility, low cost and easy processing. One class of ELs devices with these characteristics are produced by employing a organic-polymeric/inorganic composite from a conductive polymer blend and an inorganic electroluminescent material (Zn2SiO4:Mn) dispersed in the polymeric matrix. This kind of device operates in d.c. or a.c. potentials, with EL of hundreds candela in the green region of the visible spectrum. However, few studies on the light emission were performed for these devices. In order to characterize devices made from composites, in this work is proposed a method of characterizing the electroluminescence associated with the impedance spectroscopy technique. To implement the technique of impedance spectroscopy was employ an experimental setup consisting of a source of a.c. voltage, an oscilloscope, and a reference resistor. Associated with this system, was use a photo diode and an analog electrometer to characterize the emitted light signal from the sample. The system was implemented allows characterization by impedance spectroscopy in the frequency range from 0.2 Hz up to 2 MHz and voltage amplitudes of 5 mV up to 20 kV. This system permits, at the same time, measurement of the RMS value of the luminance for devices in frequency range from 20 Hz up to 2 MHz. To test the system efficiency, an EL device was characterized showing analogous results to those reported in literature. By doing this, was demonstrated the efficiency of the system for electroluminescence characterization associated with the electrical characterization by impedance spectroscopy, for devices

Caracterização e aplicação da Blenda PEDOT : PSS/PVA na construção de eletrodos transparentes e dispositivos eletroluminescentes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da labilidade de Cu(II), Cd(II), Mn(II) e Ni(II) em substâncias húmicas aquáticas utilizando-se membranas celulósicas organomodificadas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cobertura do solo, produção de biomassa e teores de Mn e Zn de alface no sistema orgânico

O objetivo deste trabalho foi avaliar o efeito da cobertura do solo com aveia preta e manutenção da palha sobre o terreno, bem como cobertura do solo com filme de polietileno preto, sobre a produção de biomassa e teores de Mn e Zn em alface cultivada no sistema orgânico, por dois anos consecutivos. Utilizaram-se cinco tratamentos: solo sem cobertura, coberto com filme de polietileno preto, coberto com aveia acamada, coberto com aveia ceifada e solo coberto com aveia na sua forma natural, para o cultivo de três cultivares de alface. O experimento seguiu delineamento experimental de blocos ao acaso, com quatro repetições e análise estatística com parcelas subdivididas. Concluiu-se que o cultivo de alface em sucessão à aveia preta, sobre a palha, promoveu produção satisfatória e apresentou adequados teores de manganês e zinco, equivalentes àqueles encontrados na literatura em diferentes sistemas de cultivo, e a cobertura do solo com plástico preto promoveu produção satisfatória com maior acúmulo de Zn no primeiro ano e menor de Mn no segundo.

A novel Mn-containing conducting metallopolymer obtained by electropolymerization in aqueous solution of a tetranuclear oxo-bridged manganese complex

The [Mn(4)(IV)O(5)(terpy)(4)(H(2)O)(2)](6+) complex shows great potential for electrode modification by electropolymerization using cyclic voltammetry. The electropolymerization mechanism was based on the electron transfer between dx(2)-y(2) orbitals of the metallic center and p pi orbital of the ligand.

Enzymeless Hydrogen Peroxide Sensor Based on Mn-containing Conducting Metallopolymer

The [(Mn4O5)-O-IV(terpy)(4)(H2O)(2)](6+) complex, show great potential for electrode modification by electropolymerization using cyclic voltammetry. The voltammetric behavior both in and after electropolymerization process were also discussed, where the best condition of electropolymerization was observed for low scan rate and 50 potential cycles. A study in glass electrode for better characterization of polymer was also performed. Electrocatalytic process by metal centers of the conducting polymer in H2O2 presence with an increase of anodic current at 0.85 V vs. SCE can be observed. The sensor showed great response from 9.9 x 10(-5) to 6.4 x 10(-4) mol L-1 concentration range with a detection limit of 8.8 x 10(-5) mol L-1, where the electrocatalytic mechanism was based on oxidation of H2O2 to H2O with consequently reduction of Mn-IV to Mn-III. After, the Mn-III ions are oxidized electrochemically to Mn-IV ions. (C) 2012 Elsevier Ltd .... Selection and/or peer-review under responsibility of the Symposium Cracoviense Sp. z.o.o.

Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline Ga(1-x)Mn(x)N films

The effect of manganese on the vibrational properties of Ga(1-x)Mn(x)N (0 <= x <= 0.18) films has been investigated by Raman scattering using 488.0 and 632.8 nm photon excitations. The first-order transverse and longitudinal optical GaN vibrational bands were observed in the whole composition range using both excitations, while the corresponding overtones, as well as a prominent peak located in 1238 cm(-1) (153.5 meV) were only observed in the Mn-containing films under 488.0 nm excitation. We propose that the peak observed at 1238 cm(-1) is due to resonant Mn local vibrational modes, the excitation process being related to electronic transitions involving the Mn acceptor band.

Structural and Electronic Effects of Incorporating Mn in TiO2 Films Grown by Sputtering: Anatase versus Rutile

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.