Effects of Silicon and Drought Stress on Tuber Yield and Leaf Biochemical Characteristics in Potato

Silicon has beneficial effects on many crops, mainly under biotic and abiotic stresses. Silicon can affect biochemical, physiological, and photosynthetic processes and, consequently, alleviates drought stress. However, the effects of Si on potato (Solanum tuberosum L.) plants under drought stress are still unknown. The objective of this study was to evaluate the effect of Si supply on some biochemical characteristics and yield of potato tubers, either exposed or not exposed to drought stress. The experiment was conducted in pots containing 50 dm(3) of a Typic Acrortox soil (33% clay, 4% silt, and 63% sand). The treatments consisted of the absence or presence of Si application (0 and 284.4 mg dm(-3)), through soil amelioration with dolomitic lime and Ca and Mg silicate, and in the absence or presence of water deficit (-0.020 MPa and -0.050 MPa soil water potential, respectively), with eight replications. Silicon application and water deficit resulted in the greatest Si concentration in potato leaves. Proline concentrations increased under lower water availability and higher Si availability in the soil, which indicates that Si may be associated with plant osmotic adjustment. Water deficit and Si application decreased total sugars and soluble proteins concentrations in the leaves. Silicon application reduced stalk lodging and increased mean tuber weight and, consequently, tuber yield, especially in the absence of water stress.

Nitrogen and silicon fertilization of upland rice

O silício não é considerado um elemento essencial para o crescimento e desenvolvimento das plantas, entretanto, sua absorção traz inúmeros benefícios, principalmente ao arroz, como aumento da espessura da parede celular, conferindo resistência mecânica a penetração de fungos, melhora o ângulo de abertura das folhas tornando-as mais eretas, diminuindo o auto-sombreamento e aumentando a resistência ao acamamento, especialmente sob altas doses de nitrogênio. O presente trabalho teve por objetivo avaliar os efeitos da adubação nitrogenada e silicatada nos componentes vegetativos, nos componentes da produção, na altura da planta e na produtividade da cultivar de arroz IAC 202. O experimento foi constituído da combinação de três doses de nitrogênio (5, 75 e 150 mg de N kg-1 de solo) aplicado na forma de uréia e quatro doses de silício (0, 200, 400 e 600 mg de SiO2 kg-1 de solo), aplicado na forma de silicato de cálcio. O delineamento experimental utilizado foi o inteiramente casualizado em esquema fatorial 3 ´ 4 (N = 5). A adubação nitrogenada aumentou o número de colmos e panículas por metro quadrado e o número total de espiguetas, refletindo na produtividade de grãos. O perfilhamento excessivo causado pela adubação nitrogenada inadequada causou redução na porcentagem de colmos férteis, na fertilidade das espiguetas e da massa de grãos. A adubação silicatada reduziu o número de espiguetas chochas por panícula e aumentou a massa de grãos sem, contudo, refletir na produtividade de grãos.

Silicon leaf application and physiological quality of white oat and wheat seeds

Plant nutrition can positively influence quality of seeds by improving plant tolerance to adverse climate. In this context, silicon is currently considered a micronutrient and it is beneficial to plant growth, especially Poaceaes such as white oat and wheat, thereby improving physiological quality of seeds. This study had the objective of evaluating the effects of silicon leaf application on plant tillering, silicon levels and physiological quality of white oat and wheat seeds besides establishing correlations between them. Two experiments were carried out in winter with white oat and wheat. The experimental design was the completely randomized block with eight replications. Treatments consisted of foliar application of silicon (0.8% of soluble silicon, as stabilized orthosilicic acid) and a control (with no application). Silicon levels in leaves were determined at flowering whereas the number of plants and panicles/spikes per area was counted right before harvest. Seed quality was evaluated right after harvest through mass, germination and vigor tests. Data was submitted to variance analysis and means were compared by the Tukey test at a probability level of 5%. Person's linear correlation test was performed among silicon level in plants, tillering and seed quality data. Silicon leaf application increases root and total length of white oat seedlings as an effect of higher Si level in leaves. Silicon leaf application increases mass of wheat seeds without affecting germination or vigor.

Seed germination and seedling development of white oat affected by silicon and phosphorus fertilization

Os fertilizantes silicatados tem sido cada vez mais usados na agricultura devido a inúmeros benefícios, tais como correção da acidez de solos tropicais e efeitos positivos no desenvolvimento de gramíneas. A disponibilidade de nutrientes e a nutrição de plantas desempenham papel importante na produção de sementes e podem influenciar a qualidade fisiológica de sementes de aveia-branca (Avena sativa L.). Avaliou-se a germinação de sementes e o desenvolvimento de plântulas de aveia-branca em função da adubação com silício e fósforo. O delineamento experimental foi inteiramente casualizado, em esquema fatorial 2 x 4, com seis repetições. Os tratamentos consistiram de 20 e 200 mg dm-3 de P2O5, aplicados na forma de superfosfato triplo, combinados com 0, 150, 300 e 450 mg dm-3 de Si na forma de silicato de potássio. O experimento foi realizado em casa de vegetação, conduzindo-se sete plantas por vaso, com capacidade para 15 L de terra. As panículas foram colhidas e debulhadas manualmente e, as sementes, armazenadas em sacos de papel em condições normais de ambiente. As sementes foram avaliadas quanto ao teor de água, massa de sementes, germinação, condutividade elétrica, comprimento e massa da matéria seca de plântulas. Sementes de aveia-branca com qualidade superior são produzidas com 20 mg dm-3 de P2O5, independente da dose de Si. Sementes com maior germinação e vigor são obtidas com 300 e 450 mg dm-3 de K2SiO3, respectivamente. Os comprimentos da raiz e total das plântulas foram inferiores nas doses de Si até 300 kg ha-1, porém a dose de fósforo somente afetou o desenvolvimento das plântulas de maneira distinta quando aplicada junto com a maior dose de silício.

Silicon carbide surface modification by nitrogen plasma expander

Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.

Cutting forces in turning of gray cast iron using silicon nitride based cutting tool

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modeling of organic light-emitting diodes with graded concentration in the emissive multilayer

We model the electrical behavior of organic light-emitting diodes whose emissive multilayer is formed by blends of an electron transporting material, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and a hole transporting material, N,N-'-diphenyl-N,N-'-bis(1,1(')-biphenyl)-4,4-diamine. The multilayer is composed of layers of different concentration. The Alq(3) concentration gradually decreases from the cathode to the anode. We demonstrate that these graded devices have higher efficiency and operate at lower applied voltages than devices whose emissive layer is made of nominally homogeneous blends. Our results show an important advantage of graded devices, namely, the low values of the recombination rate distribution near the cathode and the anode, so that electrode quenching is expected to be significantly suppressed in these devices. (C) 2004 American Institute of Physics.

Commissioning and performance of the CMS silicon strip tracker with cosmic ray muons

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Silicon monosulphide radiative association

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E(1)Sigma(+) and A(1)Pi states of SiS. For temperatures ranging from similar to 1000 to similar to 14 000 K, the rate coefficients are found to vary from 8.43 x 10(-17) to 2.69 x 10(-16) cm(3) s(-1). Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.

Light emitting diodes containing Langmuir-Blodgett films of copolymer of a poly(p-phenylene-vinylene) derivative and poly(octaneoxide)

The properties of Langmuir and Langmuir-Blodgett (LB) films from a block copolymer with polyethylene oxide and phenylene-vinylene moieties are reported. The LB films were successfully transferred onto several types of substrates, with sufficient quality to allow for evaporation of a metallic electrode on top of the LB films to produce polymer light emitting diodes (PLEDs). The photoluminescence and electroluminescence spectra of the LB film and device were similar, featuring an emission at ca. 475 nm, from which we could infer that the emission mechanisms are essentially the same as in poly(p-phenylene) derivatives. Analogously to other PLEDs the current versus voltage characteristics of the LB-based device could be explained with the Arkhipov model according to which charge transport occurs among localized sites. The implications for nanotechnology of the level of control that may be achieved with LB devices will also be discussed.

DETERMINATION of SILICON IN LUBRICANT OIL BY HIGH-RESOLUTION CONTINUUM SOURCE FLAME ATOMIC ABSORPTION SPECTROMETRY USING LEAST-SQUARE BACKGROUND CORRECTION and INTERNAL STANDARDIZATION

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Kinetic parameters of silicon uptake by rice cultivars

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of the substitution of Y2O3 for CeO2 on the mechanical and microstructural properties of silicon nitride

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Langmuir and langmuir-blodgett films of polyfluorenes and their use in polymer light-emitting diodes

The Langmuir and Langmuir-Blodgett (LB) film properties of two polyfluorene derivatives, namely poly(2,7-9,9'-dihexylfluorene-dyil) (PDHF) and poly(9,9 dihexylfluorene-dyil-vynilene-alt-1,4-phenylene-vyninele) (PDHF-PV), are reported. Surface pressure (Pi-A) and surface potential (Delta V-A) isotherms indicated that PDHF-PV forms true monolayers at the air/water interface, but PDHF does not. LB films could be transferred onto various types of substrate for both PDHF and PDHF-PV. Only the LB films from PDHF-PV could withstand deposition of a layer of evaporated metal to form a light-emitting diode (PLED), which had typical rectifying characteristics and emitted blue light. It is inferred that the ability of the polymer to form true monomolecular layers at the air/water interface seems to be associated with the viability of the LB films in PLEDs.

Predicting structural models for silicon clusters

This article introduces an efficient method to generate structural models for medium-sized silicon clusters. Geometrical information obtained from previous investigations of small clusters is initially sorted and then introduced into our predictor algorithm in order to generate structural models for large clusters. The method predicts geometries whose binding energies are close (95%) to the corresponding value for the ground-state with very low computational cost. These predictions can be used as a very good initial guess for any global optimization algorithm. As a test case, information from clusters up to 14 atoms was used to predict good models for silicon clusters up to 20 atoms. We believe that the new algorithm may enhance the performance of most optimization methods whenever some previous information is available. (C) 2003 Wiley Periodicals, Inc.