Stabilized photorefractive running holograms, with arbitrarily selected phase shift, for material characterization

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The effect of bulk light absorption on running photorefractive holograms

The influence of bulk light absorption on running photorefractive holograms is investigated. By solving the coupled wave equations we prove that the beam intensities, but not the beam phases, can be calculated by averaging the coupling constant over the crystal thickness. We show the importance of the effect by calculating the dielectric relaxation time at the crystal front, and from that the quantum efficiency from a feedback-controlled experiment with a 2.05 mm thick BTO crystal.We propose to simulate the effect of bulk light absorption by a rude estimate of the average dielectric relaxation time which is related in a simple way to the dielectric relaxation time at the crystal front, in doing so an error of less than 10% is introduced.

Feedback-controlled running holograms in strongly absorbing photorefractive materials

We propose a mathematical model for the movement in absorbing materials of photorefractive holograms under feedback constraints. We use this model to analyze the speed of a fringe-locked running hologram in photorefractive sillenite crystals that usually exhibit a strong absorption effect. Fringe-locked experiments permit us to compute the quantum efficiency for the photogeneration of charge carriers in photorefractive crystals if the effect of bulk absorption and the effective value of the externally applied field are adequately taken into consideration. A Bi12TiO20 sample was measured with the 532-nm laser wavelength, and a quantum efficiency of φ = 0.37 was obtained. Disregarding absorption leads to large errors in φ. © 2000 Optical Society of America.