56 resultados para RF sputtering deposition
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Erbium-activated silica-based planar waveguides were prepared by three different technological routes: RF-sputtering, sol-gel and ion exchange. Various parameters of preparation were varied in order to optimize the waveguides for operation in the NIR region. Particular attention was devoted to the minimization of the losses and the increase of the luminescence efficiency of the metastable I-4(13/2) state of the Er3+ ion. Waveguide properties were determined by m-line spectroscopy and loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical processes related to the luminescence of the Er3+ ions.
Resumo:
Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2013 Elsevier B.V. All rights reserved.
Resumo:
Plasma immersion ion implantation (PIII) process is a three dimensional surface modification method that is quite mature and well known to the surface engineering community nowadays, especially to those working in the field of plasma-materials interaction, aiming at both industrial and academic applications. More recently, deposition methods have been added to PIII, the PIII&D, opening possibilities of broader range of applications of these techniques. So, PIII&D is becoming a routine method of surface modification, with the advantage of pushing up the retained dose levels limited by the sputtering due to ion implantation. Therefore, well adherent, thick, three-dimensional films without stress are possible to be achieved, at relatively low cost, using PIII&D. In this paper, we will discuss about a few PIII and PIII&D experiments that have been performed recently to achieve surface improvements in different materials: 1 - high temperature nitrogen PIII in Ti6Al4V alloy in which a deep nitrogen rich treated layer resulted in surface improvements as increase of hardness, corrosion resistance and resistance to wear of the Ti alloy; 2 - nanostructures in ZnO films, obtained by PIII&D of vaporized & ionized Zn source; 3 - combined implantation and deposition of calcium for biomaterial activity of Ti alloy (PIII&D), allowing the growth of hydroxyapatite in a body solution; 4 - magnetron sputtering deposition of Cr that was enhanced by the glow discharge Ar plasma to allow implantation and deposition of Cr on SAE 1070 steel (PIII&D) resulting in surfaces with high resistance to corrosion; and 5 - implantation of nitrogen by ordinary PIII into this Cr film, which improved resistance to corrosion, while keeping the tribological properties as good as for the SAE 1070 steel surface. © 2012 Elsevier B.V.
Resumo:
Fabrication of optoelectronic devices requires the employment of at least one transparent electrode. Usually, commercially transparent electrodes have been made by deposition of indium tin oxide (ITO) films by RF-Sputtering technique. These commercial electrodes have sheet resistance of about 100 Ω/sq and optical transmittance of 77% at the wavelength of 550 nm. The poly(3,4-ethylenedioxythiophene):polystyrene-sulfonate (PEDOT:PSS) is an alternative material to fabricate transparent electrodes due to its high conductivity (about 600 S/cm) and solubility in water. Soluble conductive materials exhibits advantages for processing of electrode layers, however there is a disadvantage during devices fabrication once materials with the same solvent of the electrode material cannot be coated one over the other. Alternatively, organic/Silica hybrid materials prepared by sol-gel process allow producing bulks and films with high chemical durability. In order to obtain transparent electrodes with high chemical durability, we introduced a blended material comprising the high UV-VIS transparency of organic/Silica sol-gel material and a high conductivity polymer PEDOT:PSS. The organic/Silica sol was obtained using two different molar concentrations (1:1 and 4:1), of tetraethylorthosilicate (TEOS) and 3-glycidoxypropyltrimethoxysilane (GPTS). Amounts of PEDOT:PSS solutions were added to the sol material, resulting in different weight fractions of sol and polymer. G:T/P:P were deposit onto glass substrates by spray-coating. In order to perform electrical characterization of the blended material, gold electrodes were thermally evaporated onto the films. The electrical characterization was performed using a Keithley 2410 source/meter unity and the optical characterization, using a Cary50 UV-Vis spectrophotometer. The absorption coefficient and electric conductivity of the different compositions blends, as function of the PEDOT:PSS concentration, were...
Resumo:
The nonlinear refractive index, n(2), of films based on the new glass system Sb(2)O(3)-Sb(2)S(3) was measured at 1064 nm with laser pulses of 15 ps, using a single-beam nonlinear image technique in presence of a phase object. The films were prepared from bulk glasses by RF-sputtering. A large value of n(2) = 3 x 10-(15) m(2)/W, which is three orders of magnitude larger than for CS(2), was determined. The result shows the strong potential of antimony-sulfide glass films for integrated nonlinear optics. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
This work reports on the mechanical properties of germanium-rich amorphous carbon-germanium alloys prepared by RF sputtering of a germanium/graphite target under an argon/hydrogen atmosphere. Nano-hardness, elastic modulus and stress were investigated as a function of the carbon content. The stress, which is reduced by the incorporation of carbon, was related to the film structure and to the difference in the Ge-Ge and Ge-C bond length. Contrary to what was expected, the hardness and elastic modulus of the alloys are lower than the corresponding values for pure amorphous hydrogenated germanium film, which in turn has both properties also smaller than those of crystalline germanium. These properties are analyzed in terms of the structural properties of the films. (C) 2001 Elsevier B.V. B.V All rights reserved.
Resumo:
This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO2 (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO2, in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.
Resumo:
This work presents studies of GeO2-PbO thin films deposited by RF Sputtering for fabrication of rib-waveguide. GeO2-PbO vitreous targets were prepared melting the reagents in alumina crucible. Thin films were deposited at room temperature using pure Ar plasma, at 5 mTorr pressure and RF power of 40 W on substrates of (100) silicon wafers. Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the determination of the chemical elements present in the GeO2-PbO film. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). The mode propagation in the waveguide structure of GeO2-PbO thin films was analyzed using an integrated optic simulation software to obtain a monomode propagation. © The Electrochemical Society.
Resumo:
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Resumo:
We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.