EFFECT of DIFFERENT SOLID AMOUNTS IN THE PHYSICAL and MICROSCOPICAL PROPERTIES of SiC POROUS CERAMICS

The presence of pores in ceramics is directly related to the chosen forming process. So, in the starch consolidation method, the ceramics show, after burning, pores with morphology similar to that presented by this organic material. on the other hand, the increase in solid load leads up to alterations in dispersion viscosity, increasing the thermal stresses during drying and sintering processes. In order to verify the solid percentage influence in ceramic final properties, samples were prepared with silicon carbide in different compositions using or not starch as binder agent and pore forming element. The characterization of the ceramic pieces was performed by superficial roughness measurements, porosity besides by optical and scanning electron microscopy. The results showed ceramics with SiC and starch presented physical and microscopic properties slightly higher in relation to those with only ceramic powder in their composition. The presence of organic material, agglomerated and foam during the forming were essential for the final properties of the studied samples.

Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporation

Both narrow and broad photoluminescence bands were observed in Ga1-XAsX films prepared by flash evaporation of polycrystalline GaAs containing native C impurities. The observed narrow crystalline-like bands are similar to band-to-band and C acceptor impurity emissions in crystalline GaAs. The narrow bands are evidence that the As excess favors the PL active GaAs crystallite formation in films deposited onto silicon (10 0) substrate, even when the As excess is very large (X = 0.84). This favoring is not observed in twin samples grown on silica glass substrates nor on Ga rich samples, indicating the important role of the combined effect of the As excess and Si substrate in the GaAs crystallite formation. The broad amorphous-like bands were observed in Ga rich and in moderately As rich samples. The photoluminescence emission is compared with the microstructure of the material as determined from the micro-Raman, absorption edge and reflectance measurements. The volume fraction of the crystallites formed is small and PL emission indicates that the crystallite electronic quality is much better than the ones formed heat treating films grown on silica glass substrates. (C) 2004 Elsevier B.V. All rights reserved.

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.

Red and blue emissions of europium doped gadolinium silicate from porous silica matrix and hydroxide carbonate with spherical shaped particles

In this work, Eu(III) and Eu(II) doped gadolinium silicates has been obtained as compact tubes starting from spherical gadolinium hydroxide carbonate using the pores of silica matrix as support and its surface as reagent. Eu(III) doped gadolinium silicate with hexagonal phase shows an interesting visible shifted charge transfer band when compared to disilicate with orthorhombic phase that was also obtained. Eu(II) gadolinium silicate has been prepared using CO atmosphere presenting an intense blue emission. The divalent europium system shows a potential application as an UV-blue converter. The samples were characterized by scanning electron microscopy (SEM), X-ray powder diffractometry (XRD) and photoluminescence spectroscopy. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Rhodamine B-containing silica films from TEOS precursor: Substrate surface effects detected by photoluminescence

This work presents the study of substrate surface effects on rhodamine B-containing silica films obtained from TEOS (tetraethylorthosilicate) acid hydrolysis. Soda-lime glass substrates were treated with basic solution under different reaction times and temperatures. Rhodamine B-containing silica films were deposited on pre-treated substrates by the spin-coating method. The substrate surface directly affects film morphology and homogeneity. The films are formed by packed silica spheres which protect the dye against acid-base attack. Luminescence spectra present shifts on the dye emission maximum as expected for different pH values on the substrate surface depending on the alkaline treatment. (c) 2006 Elsevier B.V. All rights reserved.

beta-ZnMoO4 microcrystals synthesized by the surfactant-assisted hydrothermal method: Growth process and photoluminescence properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb1-XLaXTiO3 thin films, (X = 0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO2/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300degreesC range in an O-2 atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO3. The films deposited on Pt/Ti/SiO2/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb1-xLaxTiO3 thin films, (X=0.0; 13 and 0.27mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO2/Si(111), Si(100) and glass substrates by spin coating, and annealed in the 200-300°C range in an O2 atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO3. The films deposited on Pt/Ti/SiO2/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration. © 2002 Elsevier Science B.V. All rights reserved.