Wannier-function approach to electron states in superlattices under an electric field

Electron quasi-stationary states in a periodic semiconductor superlattice are calculated, as linear combinations of Wannier-Kohn functions, for different values of an electric field applied along the heterostructure. A comparison with an alternative approach, which is based on the localization of quasi-stationary states, is performed. (C) 2004 Elsevier Ltd. All rights reserved.

Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Inovação tecnológica na indústria automobilística: características e evolução recente

O objetivo principal deste artigo é analisar as características básicas da evolução recente do processo de inovação tecnológica na indústria automobilística. A hipótese de trabalho é que estariam ocorrendo mudanças na intensidade do processo de inovação técnica nessa indústria. O ponto de partida é a observação de que, nos últimos anos, tem havido na indústria automotiva - provavelmente em decorrência da intensificação da concorrência setorial e de uma maior oportunidade tecnológica - tanto uma ampliação dos gastos em P&D quanto uma crescente incorporação da microeletrônica (nos produtos e nos processos produtivos). Finalmente, são feitas também algumas considerações procurando relacionar os resultados obtidos neste artigo com a discussão do processo de de-maturity (rejuvenescimento) industrial, proposto por Abernathy e outros autores.

Doping of polyaniline and derivatives induced by X-ray radiation

Thin films of chemically synthesized polyaniline and poly(o-methoxyaniline) were exposed to ionizing X-ray radiation and characterized by radiation induced conductivity measurements, ultraviolet-visible spectroscopy, electron paramagnetic resonance, electrical conductivity and solubility measurements. Samples irradiated in vacuum or dry Oxygen atmosphere did not have their electronic spectra changed. However, under humid atmosphere the energy of the excitonic transition was decreased and accompanied by a great conductivity increase. The results indicate that doping of polyaniline can be induced by X-ray radiation which might be of great interest for applications on lithography and microelectronics.

Influence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini process

Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500°C for 3 hours. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films is discussed.

Anelastic spectroscopy in Al2O3

Engineering ceramics have found use in many applications, such as engine parts, ball bearings, artificial bone and hip replacements and gyroscopes, because of their good chemical inertness, hardness, high temperature stability and excellent wear resistance. Oxide ceramic may meet these demands. Alumina (Al2O3) ceramics offer a high potential for many engineering applications, such as wear- and/or corrosion-resistant components, and as material for substrates or housings in microelectronic devices. Alumina is used among other things for seal ring, draw-cones, guides, water mixing tapes, bearing parts, medical prostheses and cutting tools. Measurements of the elastic energy loss and modulus (anelastic spectroscopy) as a function of temperature can distinguish among the different atomic jumps, which occurs in the various phases or at different local ordering. In this paper, it is reported anelastic relaxation measurements in Al2O3 samples using commercial starch. These measurements were carried out in a torsion pendulum operating in frequencies around 40 Hz. The results shown strongly influence of the type of forming in the elastic modulus obtained by anelastic relaxation measurements.

Generating VHDL-AMS models of digital-to-analogue converters from MATLAB®/SIMULINK®

Today, the trend within the electronics industry is for the use of rapid and advanced simulation methodologies in association with synthesis toolsets. This paper presents an approach developed to support mixed-signal circuit design and analysis. The methodology proposed shows a novel approach to the problem of developing behvioural model descriptions of mixed-signal circuit topologies, by construction of a set of subsystems, that supports the automated mapping of MATLAB®/SIMULINK® models to structural VHDL-AMS descriptions. The tool developed, named MS 2SV, reads a SIMULINK® model file and translates it to a structural VHDL-AMS code. It also creates the file structure required to simulate the translated model in the System Vision™. To validate the methodology and the developed program, the DAC08, AD7524 and AD5450 data converters were studied and initially modelled in MATLAB®/ SIMULINK®. The VHDL-AMS code generated automatically by MS 2SV, (MATLAB®/SIMULINK® to System Vision™), was then simulated in the System Vision™. The simulation results show that the proposed approach, which is based on VHDL-AMS descriptions of the original model library elements, allows for the behavioural level simulation of complex mixed-signal circuits.

Critical parameter determination of sonic flow controller diamond microtubes and micronozzles

In this article, the authors measure throughput of sonic diamond microtubes and micronozzles that can work as passive gas flow controllers and flow meters under choking conditions. The behavior of the outlet pressure through the microdevices using an experimental setup with constant volume and constant temperature was determined in order to obtain the critical throughput, the critical mass flow rate, and the discharge coefficients of the diamond sonic microdevices. © 2007 American Vacuum Society.

Fabrication and characterization of GeO2-PbO optical waveguides

This work presents studies of GeO2-PbO thin films deposited by RF Sputtering for fabrication of rib-waveguide. GeO2-PbO vitreous targets were prepared melting the reagents in alumina crucible. Thin films were deposited at room temperature using pure Ar plasma, at 5 mTorr pressure and RF power of 40 W on substrates of (100) silicon wafers. Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the determination of the chemical elements present in the GeO2-PbO film. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). The mode propagation in the waveguide structure of GeO2-PbO thin films was analyzed using an integrated optic simulation software to obtain a monomode propagation. © The Electrochemical Society.

Energia específica de corte e integridade superficial no microfresamento do ABNT 1045

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da influência do tratamento térmico em filmes supercondutores, do sistema BSCCO obtido pela técnica de spin-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Anteprojeto de um sistema digital de proteção e controle aplicado em uma subestação elétrica industrial

With the growth of the demand on electric energy in the last decades, the urban distribution and transmission systems have experienced a bigger necessity to improve on the substations, the automation procedures and techniques on the operation maneuvers of such systems, in a sense that better attends the quality levels, availability, continuity and operational reliability. In this way, the objective of the present paper is to perform a study of protection and control on an electrical industrial system involving the procedures of digitizing and maneuvers automatism utilizing operational techniques and other pertinent information used in a typical high-voltage Industrial Electrical System. Analysis were made on short-circuits to specify the main components of the 138 [kV] substation, in addition, there were used digital MiCOM relays to make the protection of the present elements. With that, a program was developed to allow the user to monitor the condition of circuit-breakers through a supervision screen being able to simulate some kinds of faults, as well as observing the characteristics of each device. This way, the importance of having a fast and reliable system that ensures the equipment’s protection and the industrial process continuity due to faults on the electrical system is noticeable. It’s important to highlight that all this digitizing was mainly favored by the development of digital technology on the last years, mainly on microelectronics, also with the appearance of supervision gadgets allowing the development of complex systems in supervision and electric energy control

Caracterização de filmes de BaxSr1-xTiO3 Sintetizados pelo método hidrotermal assistido por micro-ondas e depositados por eletroforese

Pós-graduação em Ciência e Tecnologia de Materiais - FC

O ofuscamento da infância no brilho das telas: relações entre teoria crítica, educação e sociedade

Pós-graduação em Educação Escolar - FCLAR