Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline Ga(1-x)Mn(x)N films

The effect of manganese on the vibrational properties of Ga(1-x)Mn(x)N (0 <= x <= 0.18) films has been investigated by Raman scattering using 488.0 and 632.8 nm photon excitations. The first-order transverse and longitudinal optical GaN vibrational bands were observed in the whole composition range using both excitations, while the corresponding overtones, as well as a prominent peak located in 1238 cm(-1) (153.5 meV) were only observed in the Mn-containing films under 488.0 nm excitation. We propose that the peak observed at 1238 cm(-1) is due to resonant Mn local vibrational modes, the excitation process being related to electronic transitions involving the Mn acceptor band.

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.

Thermodynamic and electronic study of Ga-1 _ xMnxN films. A theoretical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Water content and GA(3)-induced embryonic cell expansion explain Euterpe edulis seed germination, rather than seed reserve mobilisation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Doping saturation in dye-sensitized solar cells based on ZnO:Ga nanostructured photoanodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and characterization of ZnO and ZnO : Ga films and their application in dye-sensitized solar cells

Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa2O4), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+, according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO: Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm(-2)), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device.

Efeitos de materiais orgânicos e da umidade do solo na patogenicidade de Rhizoctonia solani Kühn GA-4 HGI ao feijoeiro

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Efeitos do acido giberélico (GA) e do cloreto de clorocolina (CCC) sobre o crescimento inicial de Brachiaria plantaginea (Link) Hitch

Com o objetivo de verificar os efeitos do ácido giberélico (GA) e do cloreto de clorocolina (CCC) sobre o crescimento e desenvolvimento inicial de Brachiaria plantaginea, instalou-se a presente pesquisa em local com alta infestação dessa espécie, utilizando-se dos seguintes tratamentos: CCC nas concentrações de 1000 e 2000 ppm, GA na de 50 e 100 ppm e uma testemunha sem aplicação dos fitoreguladores. Na época de aplicação dos produtos as plantas apresentavam, em média, sete folhas e idade em torno de 25 dias. Os parâmetros avaliados foram altura do dossel, altura média das plantas, número médio de perfilhos por planta, biomassa seca da parte aérea total e por indivíduo. Os resultados foram avaliados 22 dias após a aplicação, quando se verificou que a biomassa total das plantas não foi alterada significativamente pelos tratamentos. Não ocorreram efeitos de doses e nem de interações entre fitoreguladores com dose em quaisquer dos parâmetros avaliados. Não se verificaram efeitos do CCC nos dados obtidos e todas as alterações ocorridas foram devidas à aplicação do GA que aumentou, significativamente, a altura de dossel e dos indivíduos de Brachiaria plantaginea e reduziu o perfilhamento da planta daninha.

High Verdet constant Ga : S : La : O chalcogenide glasses for magneto-optical devices

The magneto-optical rotation at room temperature was measured for three Ga:S:La:O chalcogenide glasses at several laser lines in the visible. The first sample was a binary system constituted by 70 mol % Ga2S3 and 30 mol % La2O3, whereas in the second and third ones the lanthanum oxide was partially substituted by lanthanum sulfide, keeping the amount of gallium sulfide fixed. A pulsed magnetic field between 50 and 80 kG was used for the Faraday rotation measurements. The Verdet constant for one of the ternary samples was found to be as high as 0.205 min G(-1) cm(-1) at 543 nm, indicating that these chalcogenide glasses are very promising for magneto-optical applications. The data for each sample were fitted using the expected analytical expression for the magneto-optical dispersion. Measurements of the refractive index of the glasses at 632.8 nm are also reported. Data on the magneto-optical properties of two high Verdet constant, heavy-metal oxide diamagnetic glasses are also included for comparison. (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)00102-6].

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

The 3.4-3.5 Ga Sao Jose do Campestre massif, NE Brazil: remnants of the oldest crust in South America

The oldest fragment of continental crust recognized in South America occurs as an isolated Archean enclave in northeastem Brazil's Borborema Province, ca. 600 Ma Brasiliano-Pan African orogenic belt. This Archean fragment, the Sao Jose do Campestre massif, is surrounded by large tracts of 2.2-2.0 Ga Paleoproterozoic gneisses and is located more than 600-1500 km from the much larger assemblages of Archean rocks found in the Sao Fransciso and Amazonian cratons, located to the south and west, respectively. Geochronological studies of the Sao Jose do Campestre massif show that its oldest rocks contain zircons with U-Pb ages up to 3.5 Ga and Sm-Nd T-DM model ages of more than 3.7 Ga, indicating that they represent reworked crust. This older nucleus is flanked by both reworked and juvenile 3.25 and 3.18 Ga rocks which arc intruded by both 3.00 and 2.69 Ga plutonic bodies. The protracted evolution the Sao Jose do Campestre massif is consistent with that of a larger continental mass as opposed to a small crustal fragment that grew in isolation. As such, the Sao Jose do Campestre massif is interpreted as representing a detached piece of an evolved craton that became entrained with younger rocks during a subsequent Paleoproterozoic accretionary-orogenic event. This hypothesis is bolstered by the presence of Paleoproterozoic gneisses that envelop the Sao Jose do Campestre massif, as well as the existence of ca. 2.0 Ga metamorphic zircon and monazite within its rocks. The occurrence of several different Archean cratonic basement inliers within the greater Paleoproterozoic crustal framework of the Borborema Province suggests that cratonic slices spalled off one or more larger Archean masses prior to the ca. 2.2-2.0 Ga Paleoproterozoic orogenic collage. A important challenge is to link these older fragments to their parent cratons. Although results are not unique, the pattern of ages and isotopic signatures observed in the Sao Jose do Campestre massif is similar to that seen in parts of the Sao Francisco Craton, and it is possible that the Sao Jose do Campestre massif is a fragment of an Archean continental fragment formed during an episode of continental breakup prior to 2200 Ma. (C) 2003 Elsevier B.V. All rights reserved.

Thermal-optical properties of Ga : La : S glasses measured by thermal lens technique

In this work the quantitative theoretical treatment for two beam mode mismatched thermal lens spectrometry is applied to investigate the thermo-optical properties of chalcohalide (chalcolgenides and halides mixture) glasses. For the three kinds of glass studied the thermal diffusivity varied between 2.5 and 2.7 x 10(-3) cm(2) s(-1). Using these results and supposing Dulong-Petit specific heats we estimated the thermal conductivity and temperature ratio of optical path length (ds/dT) and temperature coefficient of refractive index (dn/dT). All samples had positive ds/dT(similar to 3.3 x 10(-6) K-1) and negative dn/dT (similar to -26 x 10(-6) K-1). The difference between these parameters and the change of signal are consequences of the expansion coefficient (13 x 10(-6) K-1) and refractive index (n similar to 2.6) of chalcohalides. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses

Photoexpansion and photobleaching effects have been examined in glass compositions Ga10Ge25S65 and Ga5Ge25As5S65. Such compositions are promising for optical storage and planar waveguide applications. To evaluate the photoinduced effect, samples were exposed to 351 nm light, varying power density (3-10 W/cm(2)) and exposure time (0-120 min). The exposed areas have been analyzed using atomic force microscopy (AFM) and an expansion of 800 nm is observed for composition Ga10Ge25S65 exposed during 120 min and 5 W/cm(2) power density. The optical absorption edge measured by a spectrophotometer indicates a blue shift (80 nm) after illumination in the composition Ga10Ge25S65. The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using a energy dispersive analyzer (EDX) indicate an increase of the number of sulfur atoms in the irradiated area. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.

The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.