92 resultados para INTERFACE TRACKING
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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This paper presents evaluations among the most usual MPPT techniques, doing meaningful comparisons with respect to the amount of energy extracted from the photovoltaic panel (PV) (Tracking Factor - TF) in relation to the available power, PV voltage ripple, dynamic response and use of sensors. Using MatLab/Simulink® and DSpace platforms, a digitally controlled boost DC-DC converter was implemented and connected to an Agilent Solar Array E4350B simulator in order to verify the analytical procedures. The main experimental results are presented and a contribution in the implementation of the IC algorithm is performed and called IC based on PI. Moreover, the dynamic response and the tracking factor are also evaluated using a Friendly User Interface, which is capable of online program power curves and compute the TF. Finally, a typical daily insulation is used in order to verify the experimental results for the main PV MPPT methods. © 2011 IEEE.
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In this paper, remote laboratory experiment access is considered through the use of radio frequency identification (RFID) technology. Contactless smart cards are used widely in many applications from travel cards through to building access control and inventory tracking. However, their use is considered here for access to electronic engineering experimentation in a remote laboratory setting by providing the ability to interface experiments through this contactless (wireless) connection means. A case study design is implemented to demonstrate such a means by incorporating experiment data onto a contactless smart card and accessing this via a card reader and web server arrangement. © 2012 IEEE.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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A method of determining spectral parameters p (slope of the phase PSD) and T (phase PSD at 1 Hz) and hence tracking error variance in a GPS receiver PLL from just amplitude and phase scintillation indices and an estimated value of the Fresnel frequency has been previously presented. Here this method is validated using 50 Hz GPS phase and amplitude data from high latitude receivers in northern Norway and Svalbard. This has been done both using (1) a Fresnel frequency estimated using the amplitude PSD (in order to check the accuracy of the method) and (2) a constant assumed value of Fresnel frequency for the data set, convenient for the situation when contemporaneous phase PSDs are not available. Both of the spectral parameters (p, T) calculated using this method are in quite good agreement with those obtained by direct measurements of the phase spectrum as are tracking jitter variances determined for GPS receiver PLLs using these values. For the Svalbard data set, a significant difference in the scintillation level observed on the paths from different satellites received simultaneously was noted. Then, it is shown that the accuracy of relative GPS positioning can be improved by use of the tracking jitter variance in weighting the measurements from each satellite used in the positioning estimation. This has significant advantages for scintillation mitigation, particularly since the method can be accomplished utilizing only time domain measurements thus obviating the need for the phase PSDs in order to extract the spectral parameters required for tracking jitter determination.
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The electrical characterization of a high efficient multilayer polymer light emitting diode using poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] as the emissive layer and an anionic fluorinated surfactant as the electron transport layer was performed. For the sake of comparison, a conventional single layer device was fabricated. The density current vs. voltage measurements revealed that the conventional device has a higher threshold voltage and lower current compared to the surfactant modified device. The effective barrier height for electron injection was suppressed. The influence of the interfaces and bulk contributions to the dc and high frequencies conductivities of the devices was also discussed. (c) 2006 Springer Science + Business Media, Inc.
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An investigation is made of the influence from small amounts of the protein bovine serum albumin (BSA) on the lateral organization of low molecular weight surfactant sodium bis-2-ethylhexyl sulfosuccinate (AOT) at the air-water interface. Surface pressure (pi - A), surface potential (DeltaV - A) and Brewster angle microscopy (BAM) experiments were carried out, with particular emphasis on the monolayer stability under successive compression-expansion cycles. AOT monolayer is not stable at the air-water interface, which means that the majority of AOT molecules go into the aqueous subphase as monomers and/or normal micelles. When a waiting time elapses between spreading and compression, the surfactant monolayer tends to reorganize partially at the air-water interface, with a monolayer expansion being observed for waiting times as large as 12 h. The incorporation of very small amount of BSA (10(-9) M) at the interface, also inferred from BAM, increases the monolayer stability as revealed by pi - A and DeltaV - A results. For a waiting time of circa 3 h, the mixed monolayer reaches its maximum stability. This must be related to protein (and/or protein-surfactant complexes) adsorbed onto the AOT monolayer, thus altering the BSA conformation to accommodate its hydrophobic/hydrophilic residues. Furthermore, the effects from such small amounts of BSA in the monolayer formation and stabilization mean that the AOT monolayer responds cooperatively to BSA. (C) 2004 Elsevier B.V. All rights reserved.
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A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.
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Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.
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Capacitance spectra of thin (< 200 nm) Alq(3) electron-only devices have been measured as a function of bias voltage. Capacitance spectra exhibit a flat response at high frequencies (> 10(3) Hz) and no feature related to the carrier transit time is observed. Toward low frequencies the spectra reach a maximum and develop a negative excess capacitance. Capacitance response along with current-voltage (J-V) characteristics are interpreted in terms of the injection of electrons mediated by surface states at the metal organic interface. A detailed model for the impedance of the injection process is provided that highlights the role of the filling/releasing kinetics of energetically distributed interface states. This approach connects the whole capacitance spectra to the occupancy of interface states, with no additional information about bulk trap levels. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 1.5 x 10(12) cm (2)). (C) 2008 Elsevier B.V. All rights reserved.
Nanohardness of a Ti thin film and its interface deposited by an electron beam on a 304 SS substrate
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The results of nanohardness measurements at a film surface and film-substrate interface are presented and discussed. An electron beam device was used to deposit a Ti film on a 304 stainless steel (304 SS) substrate. The diluted interface was obtained by thermal activated atomic diffusion. The. Ti film and Ti film-304 SS interface were analyzed by energy dispersive spectrometry and were observed using atomic force microscopy. The nanohardness of the Ti film-304 SS system was measured by a nanoindentation technique. The results showed the Ti film-304 SS interface had a higher hardness value than the Ti film and 304 SS substrate. The Ti film surface had a lower hardness due to the presence of a TiO2 thin layer.
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The problem of signal tracking, in the presence of a disturbance signal in the plant, is solved using a zero-variation methodology. A state feedback controller is designed in order to minimise the H-2-norm of the closed-loop system, such that the effect of the disturbance is attenuated. Then, a state estimator is designed and the modification of the zeros is used to minimise the H-infinity-norm from the reference input signal to the error signal. The error is taken to be the difference between the reference and the output signals, thereby making it a tracking problem. The design is formulated in a linear matrix inequality framework, such that the optimal solution of the stated control problem is obtained. Practical examples illustrate the effectiveness of the proposed method.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)