Ionized oxygen vacancy-related electrical conductivity in (Pb(1-x)La(x)) (Zr(0.90)Ti(0.10))(1-x/4)O(3) ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Strain and vacancy cluster behavior of vanadium and tungsten-doped Ba[Zr(0.10)Ti(0.90)]O(3) ceramics

Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr(0.10)Ti(0.90)]O(3), (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics. (c) 2008 American Institute of Physics.

Effect of magnesium addition on the vacancy-Mg binding free enthalpy in Al-Cr alloys

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence behavior in MgTiO3 powders with vacancy/distorted clusters and octahedral tilting

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTiO3

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

DFT Study on Ce-Doped Anatase TiO2: Nature of Ce3+ and Ti3+ Centers Triggered by Oxygen Vacancy Formation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)