Optical spectrum of bottom-up graphene nanoribbons: towards efficient atom-thick excitonic solar cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.

Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.

High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well

The high-energy states of a shallow donor in a GaAs/Ga0.7Al0.3As multiple-quantum-well structure subjected to a magnetic field in the growth direction are studied both theoretically and experimentally. Effects due to higher confinement subbands as well as due to the electron-phonon interaction are investigated. We show that most of the peaks in the infrared photoconductivity spectrum are due to direct transitions from the ground state to the m = +/-1 magnetodonor states associated with the first subband, but transitions to the m = +/-1 states of the third subband are also apparent. The remaining photoconductivity peaks are explained by phonon-assisted impurity transitions.

Structural phase transitions of PbZr0.52Ti0.48O3 ceramic: An infrared spectroscopy study

The recent discovery of a ferroelectric monoclinic phase in the PbZr1-xTixO3 (PZT) system attained the attention of several researchers due to the possibility of understanding the relationships between structural features and piezoelectric properties. The nature of the monoclinic phase in some PZT compositions remains controversial and unclear. In this work, structural phase transitions of PbZr0.52Ti0.48O3 ceramic were investigated by infrared spectroscopy as a function of temperature. Studies were centered on nu(1)-stretching modes and corresponding half width Wi as a function of temperature. The occurrence of the anomalies in the infrared spectra as a function of temperature suggests the following monoclinic ( LT) -> monoclinic ( HT) -> tetragonal phase transition were observed at 183 K and at 263 K.

Modeling the dielectric response of lanthanum modified lead zirconate titanate ferroelectric ceramics-an approach to the phase transitions in relaxor ferroelectrics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Hydrogen/deuterium exchange mass spectrometry for characterizing phosphoenolpyruvate-induced structural transitions in Mycobacterium tuberculosis 5-enolpyruvylshikimate-3-phosphate synthase (EC 2.5.1.1)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Kinetic asymmetry in the gel-liquid crystalline state transitions of DDAB vesicles studied by differential scanning calorimetry

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Atomic radiative transitions in thermo field dynamics

In this work we rederive the Lamb-Retherford energy shift for an atomic electron in the presence of a thermal radiation. Using the Dalibard, Dupont-Roc and Cohen-Tannoudji (DDC) formalism, where physical observables are expressed as convolutions of suitable statistical functions, we construct the electromagnetic field propagator of thermo field dynamics in the Coulomb gauge in order to investigate finite temperature effects on the atomic energy levels. In the same context, we also analyze the problem of the ground state stability.

Two phase transitions in (s+id)-wave Bardeen-Cooper-Schrieffer superconductivity

We establish universal behaviour in the temperature dependencies of some observables in (s + id)-wave BCS superconductivity in the presence of a weak a wave. We find also a second second-order phase transition. As temperature is lowered-past the usual critical temperature T-c, a less ordered superconducting phase is created in the d wave, which changes to a more ordered phase in a (s + id) wave at T-c1 (transitions is manifested by the two jumps in the specific heat at T-c and T(c)1. The temperature dependencies of the susceptibility, penetration depth, and thermal conductivity also confirm the existence of the new phase transition.

On high Q(2) behavior of the pion form factor for transitions gamma*gamma -> pi(0) and gamma*gamma* -> pi(0) within the nonlocal quark-pion model

The behavior of the transition pion form factor for processes gamma (*)gamma --> pi(0) and gamma (*)gamma (*) --> pi(0) at large values of space-like photon momenta is estimated within the nonlocal covariant quark-pion model. It is shown that, in general, the coefficient of the leading asymptotic term depends dynamically on the ratio of the constituent quark mass and the average virtuality of quarks in the vacuum and kinematically on the ratio of photon virtualities. The kinematic dependence of the transition form factor allows us to obtain the relation between the pion light-cone distribution amplitude and the quark-pion vertex function. The dynamic dependence indicates that the transition form factor gamma (*)gamma -->, pi(0) at high momentum transfers is very sensitive to the nonlocality size of nonperturbative fluctuations in the QCD vacuum. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Two phase transitions in (d(x2-y2)+is)-wave superconductors

We study numerically the temperature dependencies of specific heat, susceptibility, penetration depth, and thermal conductivity of a coupled (d(x2-y2) + is)-wave Bardeen-Cooper-Schrieffer (BCS) superconductor in the presence of a weak s-wave component (1) on square lattice and (2) on a lattice with orthorhombic distortion. As the temperature is lowered past the critical temperature T-c, a less ordered superconducting phase is created in d(x2-y2) wave, which changes to a more ordered phase in (d(x2-y2) + is) wave at T-c1. This manifests in two second-order phase transitions. The two phase transitions are identified by two jumps in specific heat at T-c and T-c1. The temperature dependencies of the superconducting observables exhibit a change from power-law to exponential behavior as temperature is lowered below T-c1 and confirm the new phase transition. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Critical temperature for first-order phase transitions in confined systems

We consider the Euclidean D-dimensional -lambda vertical bar phi vertical bar(4)+eta vertical bar rho vertical bar(6) (lambda,eta > 0) model with d (d <= D) compactified dimensions. Introducing temperature by means of the Ginzburg-Landau prescription in the mass term of the Hamiltonian, this model can be interpreted as describing a first-order phase transition for a system in a region of the D-dimensional space, limited by d pairs of parallel planes, orthogonal to the coordinates axis x(1), x(2),..., x(d). The planes in each pair are separated by distances L-1, L-2, ... , L-d. We obtain an expression for the transition temperature as a function of the size of the system, T-c({L-i}), i = 1, 2, ..., d. For D = 3 we particularize this formula, taking L-1 = L-2 = ... = L-d = L for the physically interesting cases d = 1 (a film), d = 2 (an infinitely long wire having a square cross-section), and for d = 3 (a cube). For completeness, the corresponding formulas for second-order transitions are also presented. Comparison with experimental data for superconducting films and wires shows qualitative agreement with our theoretical expressions.

Numerical approximation of the Ginzburg-Landau equation with memory effects in the dynamics of phase transitions

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)