Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi0.92La0.08FeO3 (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 mu C/cm(2) and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.

Dielectric behaviour of CaCu3Ti4O12-epoxy composites

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Electrical and microstructural properties of CaTiO3-doped K1/2Na1/2NbO3-lead free ceramics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)O3:2V ceramics as characterized by piezoresponse force microscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Optical and dielectric relaxor behaviour of Ba(Zr0.25Ti0.75)O-3 ceramic explained by means of distorted clusters

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramic

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Mesoscopic structure evidenced by AC dielectric nonlinearities in Sr(0.75)Ba(0.25)Nb(2)O(6) relaxor ferroelectric thin films

The AC electric field and temperature dependences of the dielectric permittivity for strontium barium niobate (Sr(0.75)Ba(0.25)Nb(2)O(6)) relaxor ferroelectric thin films have been investigated. The results indicate the existence of a true mesoscopic structure evidenced by the nonlinear dielectric response of these films, which is similar to those observed for bulk relaxor ferroelectrics. A tendency for a temperature dependent crossover from a linear to a quadratic behaviour of the dielectric nonlinearity was observed, indicating an evolution from paraelectric to glass-like behaviour on cooling the samples towards the freezing temperature transition.

Investigation on dielectric response of PMN ceramics around paraelectric-ferroelectric diffuse phase transition

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Domain wall contribution to dielectric and piezoelectric responses in 0.65Pb(Mg1/3Nb2/3)-0.35PbTiO(3) ferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Relation between ambient humidity and ionic conductivity of poly(thionaphtheneindole): Behaviour as an amperometric humidity sensor

The electrical characteristics of oxidized poly(thionaphtheneindole) were investigated as a function of ambient relative humidity (r.h.). The current flowing through a pressed pellet of material between two massive gold electrodes plotted against voltage gives a wave-shaped curve with a halfwave potential at V = similar to 3 V. The current recorded at 4 V (plateau of the wave) is a sigmoidal function of r.h, with the inflexion point at similar to 60%. An interpretation of these findings is given, based on the influence of water on the dielectric constant of the material and on acid-base equilibrium between poly(thionaphtheneindole) and water, from which protons are produced. The behaviour of poly (thionaphtheneindole) as the active component of an amperometric humidity sensor is also reported.

Thermistor behaviour and electric conduction analysis of Ni-doped niobate ferroelectric: the role of multiple beta parameters

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Piezoresponse force microscopy behaviour of Bi4Ti3O12 ceramics with various excess bismuth

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric response of tungsten modified Ba(Ti0.90Zr0.10)O3 ceramics obtained by mixed oxide method

The electrical response of Ba(Ti0.90Zr0.10)O3 (BZT) ceramics obtained by the mixed oxide method as a functionof tungsten content was investigated. According to X-ray diffraction analysis the single phase BZT1W (1wt.% W doped BZT) and BZT2W (2 wt.% W doped BZT) ceramics, crystallized in a perovskite structure, wereobtained. It is also shown that tungsten substituted ceramics can be sintered at a reduced temperature whencompared to the undoped BZT. Electron paramagnetic resonance (EPR) analyses reveals that substitution ofTi4+ by W6+ causes distortion in the crystal structure changing lattice parameter. Substitution of W6+ on B-siteof ABO3 perovskite BZT ceramics shifted the phase transition to lower temperatures up to a tungsten contentof 2 wt.% leading to a relaxor-like behaviour.Keywords: donor dopant; ceramics; dielectric response; mixed oxide method