Electrical and microstructural properties of CaTiO3-doped K1/2Na1/2NbO3-lead free ceramics
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/10/2011
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Resumo |
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Microstructure, electrical properties and dielectric behaviour of K1/2Na1/2NbO3 (KNN) and CaTiO3-modified K1/2Na1/2NbO3 (CTO-KNN) systems, were investigated. Discs doped with 0 to 0-55% mol of CaTiO3 (CTO) were sintered at 1125 degrees C for 2 h. Although minority phases were found in doped samples, CaTiO3 was not detected. It was also observed that CTO changed the microstructure and grain size of KNN drastically. Also, the Curie temperature and permittivity values decreased. Addition of CTO between 0.15 and 0.45 mol% decreases the density and dielectric values. Samples prepared with higher content of CTO than 0.45 mol% showed better electrical properties. |
Formato |
1213-1217 |
Identificador |
http://dx.doi.org/10.1007/s12034-011-0241-y Bulletin of Materials Science. Bangalore: Indian Acad Sciences, v. 34, n. 6, p. 1213-1217, 2011. 0250-4707 http://hdl.handle.net/11449/42426 10.1007/s12034-011-0241-y WOS:000298618700009 WOS000298618700009.pdf |
Idioma(s) |
eng |
Publicador |
Indian Acad Sciences |
Relação |
Bulletin of Materials Science |
Direitos |
closedAccess |
Palavras-Chave | #Na0.5K0.5NbO3 #CaTiO3 #lead-free ceramics #electrical properties |
Tipo |
info:eu-repo/semantics/article |