Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

Allocation of protective devices in distribution circuits using nonlinear programming models and genetic algorithms

The optimized allocation of protective devices in strategic points of the circuit improves the quality of the energy supply and the system reliability index. This paper presents a nonlinear integer programming (NLIP) model with binary variables, to deal with the problem of protective device allocation in the main feeder and all branches of an overhead distribution circuit, to improve the reliability index and to provide customers with service of high quality and reliability. The constraints considered in the problem take into account technical and economical limitations, such as coordination problems of serial protective devices, available equipment, the importance of the feeder and the circuit topology. The use of genetic algorithms (GAs) is proposed to solve this problem, using a binary representation that does (1) or does not (0) show allocation of protective devices (reclosers, sectionalizers and fuses) in predefined points of the circuit. Results are presented for a real circuit (134 busses), with the possibility of protective device allocation in 29 points. Also the ability of the algorithm in finding good solutions while improving significantly the indicators of reliability is shown. (C) 2003 Elsevier B.V. All rights reserved.

Vibration energy harvesting using piezoelectric transducer and non-controlled rectifiers circuits

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Phase diagrams of a CTAB/organic solvent/buffer system applied to extraction of enzymes by reverse micelles

A partial pseudo-ternary phase diagram has been studied for the cethyltrimethylammonium bromide/isooctane:hexanol:butanol/potassium phosphate buffer system, where the two-phase diagram consisting of the reverse micelle phase (L-2) in equilibrium with the solvent is indicated. Based on these diagrams two-phase systems of reverse micelles were prepared with different compositions of the compounds and used for extraction and recovery of two enzymes, and the percentage of enzyme recovery yield monitored. The enzymes glucose-6-phosphate dehydrogenase (G6PD) and xylose redutase (XR) obtained from Candida guilliermondii yeast were used in the extraction procedures. The recovery yield data indicate that micelles having different composition give selective extraction of enzymes. The method can thus be used to optimize enzyme extraction processes. (c) 2007 Elsevier B.V. All rights reserved.

Spontaneous vesicles of sodium dihexadecylphosphate in HEPES buffer

The formation of spontaneous vesicles of dihexadecylphosphate (DHP) in a HEPES buffered solution at pH 7.4, the size, morphology and melting temperature, obtained by cryogenic transmission electron microscopy (cryo-TEM) and differential scanning calorimetry (DSC), are reported. The vesicles were formed by simply mixing a 5.0 mM lipid-solvent mixture at a temperature (75 degrees C) safely above the higher melting temperature T-m = 70.4 degrees C of DHP. The vesicle diameter ranges from 100 to 332 nm and their geometry is spherical, faceted or oblong. T-m increases from 66.8 to 70.4 as DHP concentration is raised from 0.6 to 5.0 mM. (c) 2008 Elsevier B.V. All rights reserved.

Effect of citrate ions on the electrochemical behaviour of low-carbon steel in borate buffer solutions

The electrochemical behaviour of cold-rolled low carbon steel was studied on both active and passive potential regions in borate buffer solutions with and without the addition of sodium citrate (NaCit). In the active region anodic charges increased significantly and RCT values decreased with citrate, due to the formation of soluble complexes. In the passive potential region the film formed at +0.4 V in borate buffer solution with and without 0.010 M NaCit is probably enriched by Fe3O4 oxide, while films formed at +0.8 V are probably enriched by gamma-Fe2O3. The equivalent circuit [R-s(R(CT)Q)] fitted all experimental impedance data. (C) 2003 Elsevier Ltd. All rights reserved.

Structure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Historical land-cover/use in different slope and riparian buffer zones in watersheds of the state of São Paulo, Brazil

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer

a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.

A procedure to estimate parameters of a line segment taking into account its representation through pi circuits: Theoretical development

The objective of this paper is to show an alternative methodology to estimate per unit length parameters of a line segment of a transmission line. With this methodology the line segment parameters can be obtained starting from the phase currents and -voltages in receiving and sending end of the line segment. If the line segment is represented as being one or more pi circuits whose frequency dependent parameters are considered lumped, its impedance and admittance can be easily expressed as functions of the currents and voltages at the sending and receiving end. Because we are supposing that voltages and currents at the sending and receiving end of the tine segment (in frequency domain) are known, it is possible to obtains its impedance and admittance and consequently its per unit length longitudinal and transversal parameters. The procedure will be applied to estimate the longitudinal and transversal parameters of a small segment of a single-phase line that is already built.

Three- phase four-wire circuits interpretation by means of different power theories

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Application of pi Circuits for Simulation of Corona Effect in Transmission Lines

In this article, it is represented by state variables phase a transmission line which parameters are considered frequency independently and frequency dependent. Based on previous analyses, it is used the reasonable number of p circuits and the number of blocks composed by parallel resistor and inductor for reduction of numerical oscillations. It is analyzed the influence of the increase of the RL parallel blocks in the obtained results. The RL parallel blocks are used for inclusion of the frequency influence in the transmission line longitudinal parameter. It is a simple model that is been used by undergraduate students for simulation of traveling wave phenomena in transmission lines. Considering the model without frequency influence, it is included a representation of the corona effect. Some simulations are carried considering the corona effect and they are compared to the results without this phenomenon.