10 resultados para Boundaries.

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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We analyze the behavior of solutions of nonlinear elliptic equations with nonlinear boundary conditions of type partial derivative u/partial derivative n + g( x, u) = 0 when the boundary of the domain varies very rapidly. We show that the limit boundary condition is given by partial derivative u/partial derivative n+gamma(x) g(x, u) = 0, where gamma(x) is a factor related to the oscillations of the boundary at point x. For the case where we have a Lipschitz deformation of the boundary,. is a bounded function and we show the convergence of the solutions in H-1 and C-alpha norms and the convergence of the eigenvalues and eigenfunctions of the linearization around the solutions. If, moreover, a solution of the limit problem is hyperbolic, then we show that the perturbed equation has one and only one solution nearby.

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In this article we describe a feature extraction algorithm for pattern classification based on Bayesian Decision Boundaries and Pruning techniques. The proposed method is capable of optimizing MLP neural classifiers by retaining those neurons in the hidden layer that realy contribute to correct classification. Also in this article we proposed a method which defines a plausible number of neurons in the hidden layer based on the stem-and-leaf graphics of training samples. Experimental investigation reveals the efficiency of the proposed method. © 2002 IEEE.

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SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.

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