A low-voltage wide-swing programmable-gain current amplifier

A CMOS low-voltage, wide-swing continuous-time current amplifier is presented. Exhibiting an open-loop architecture, the circuit is composed of transresistance and transconductance stages built upon triode-operating transistors. In addition to an extended dynamic range, the current gain can be programmed within good accuracy by a rapport involving only transistor geometries and tuning biases. Low temperature-drift on gain setting is then expected.In accordance with a 0.35 mum n-well CMOS fabrication process and a single 1.1 V-supply, a balanced current-amplifier is designed for a programmable gain-range of 6 - 34 dB and optimized with respect to dynamic range. Simulated results from PSPICE and Bsim3v3 models indicate, for a 100 muA(pp)-output current, a THD of 0.96 and 1.87% at 1 KHz and 100 KHz, respectively. Input noise is 120 pArootHz @ 10 Hz, with S/N = 63.2 dB @ 1%-THD. At maximum gain, total quiescent consumption is 334 muW. Measurements from a prototyped amplifier reveal a gain-interval of 4.8-33.1 dB and a maximum current swing of 120 muA(pp). The current-amplifier bandwidth is above 1 MHz.

Pressure field along the axis of a high-power klystron amplifier

The pressure field in a high-power klystron amplifier is investigated to scale the ionic vacuum pump used to maintain the ultra high-vacuum in the device in order to increase its life-time. The investigation is conducted using an 1.3 GHz, 100 A - 240 keV high-power klystron with five reentrant coaxial cavities, assembled in a cylindrical drift tube 1.2 m long. The diffusion equation is solved to the regime molecular flow to obtain the pressure profile along the axis of the klystron drift tube. The model, solved by both analytical and numerical procedures, is able to determine the pressure values in steady-state case. This work considers the specific conductance and all important gas sources, as in the degassing of the drift tube and cavities walls, cathode, and collector. For the drift tube degassing rate equals to q(deg) = 2x10(-12) (-)mbar.L.s(-1) cm(-2) (degassing rate per unit area), to cavities q(cavity) = 3x10(-13) mbar.L.s(-1)cm(-2), to the cathode q(cathode) = 6x10(-9)_mbar.L.s(-1) and to the collector q(collector) = 6x10(-9) mbar.L.s(-1), it was found that a 10 L.s(-1) ionic vacuum pump connected in the output waveguide wall is suitable. In this case, the pressure obtained in the cathode is p(cathode) = 6.3x10(-9) mbar, in the collector p(collector) = 2.7x10(-9) mbar, and in the output waveguide p = 2.1x10(-9) mbar. Although only the steady-state case is analyzed, some aspects that may be relevant in a transient situation, for instance, when the beam hits the drift tube walls, producing a gas burst, is also commented.

A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift

A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

Pressure field in the cathode-anode region of a high-power klystron amplifier

The pressure field of a high-power klystron amplifier in the cathode and anode region was investigated. The investigation was performed using a 1.3 GHz, 100 A and 240 kV high-power klystron with five reentrant coaxial cavities, assembled in cylindrical drift tube 1.2 m long. The diffusion equation in mathematical model was also solved by using a 3-D finite element method code, in order to obtain pressure profile in region of interest. The results show that density profile of molecules between cathode-anode region was determined, where cathode pressure is approximately 10% higher than anode pressure.

Installation of a getter vacuum pump in cathode-anode region of a high-power klystron amplifier - Propose and feasible

The possibility to install a getter vacuum pump and its feasible in the anode of a high-power klystron amplifier is investigated in order to decrease of the pressure in the gun and consequently increasing its lifetime. The study is conducted using a 1.3 GHz, 100 A and 240 kV high-power klystron with five reentrant coaxial cavities, assembled in a cylindrical drift tube 1.2 m long. This work takes into account the specific conductance of components of gun and all important gas sources, like the degassing of the drift tube, the cavity walls, the cathode, the anode, and the collector, as well the position and pumping speed of the getter vacuum pump in anode region. © 2006 IEEE.

g-acceleration of gravity: its measurement from the shape of water by using a computerized rotational system

This paper proposes a different experimental setup compared with the traditional ones, in order to determine the acceleration of gravity, which is carried out by using a fluid at a constant rotation. A computerized rotational system-by using a data acquisition system with specific software, a power amplifier and a rotary motion sensor-is employed in order to evaluate the angular velocity and g. An equation to determine g is inferred from fluid mechanics. For this purpose, the fluid's parabolic shape inside a cylindrical receptacle is considered using a rotational movement.

Aspectos metodológicos relacionados aos sistemas manométricos utilizados em estudos hemodinâmicos

Atualmente, diante das técnicas atuais, a manometria tem sido relegada a plano secundário durante a cateterização cardíaca. No entanto, ainda fornece importantes informações para identificação e avaliação das doenças cardiovasculares. Os dados coletados durante os exames possibilitam a obtenção de variáveis quantitativas e qualitativas, as quais podem ser comparadas aos padrões normais. Os sistemas manométricos são compostos por transdutor, amplificador e registrador, que, em conjunto, devem espelhar com fidelidade a morfologia e os valores das variáveis analisadas. Para atingir esse objetivo, é necessário desempenho adequado de todos os componentes. Se uma determinada informação é de extrema relevância, o operador deve gastar tempo suficiente para obtê-la de maneira inequívoca. Assim, o operador deve estar familiarizado com os sistemas manométricos e com as fontes de erro relacionadas com as técnicas de registro, cateteres, conectores e fluidos. Com os fundamentos analisados neste manuscrito, salientamos que deve ser dispensada atenção às ondas de pressão usadas nas interpretações da fisiopatologia das doenças cardiovasculares.

Generalized squeezing operators, bipartite Wigner functions and entanglement via Wehrl's entropy functionals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Usando um voltímetro para medir tempo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

1.5 mu m and visible up-conversion emissions in Er3+/Yb3+ co-doped tellurite glasses and optical fibers for photonic applications

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

An ultra stable glass system for optical fiber devices

In this paper a modified chalcogenide glass was studied by X-ray powder diffraction, differential thermal analysis, infrared and Raman scattering spectroscopies. The study of this new matrix opens new perspectives to fabricate Pr3+-doped fibers to operate as an optical amplifier in the 1.3 mum telecommunications window. The Pr3+-doped 70Ga(2)S(3)-30La(2)S(3) glass was modified through the substitution of La2S3 by La2O3, which improves the thermal stability of these glasses without any modification of phonon energy. The possibility to pull a fiber from this glass system without any devitrification is easily achieved.

Tm and Tm-Tb-doped germanate glasses for S-band amplifiers

The mechanism involved in the Tm(3+)((3)F(4)) -> Tb(3+)((7)F(0,1,2)) energy transfer as a function of the Tb concentration was investigated in Tm:Tb-doped germanate (GLKZ) glass. The experimental transfer rate was determined from the best fit of the (3)F(4) luminescence decay due to the Tm -> Tb energy transfer using the Burshtein model. The result showed that the 1700 nm emission from (3)F(4) can be completely quenched by 0.8 mol% of Tb(3+). As a consequence, the (7)F(3) state of Tb(3+) interacts with the (3)H(4) upper excited state of TM(3+) slighting decreasing its population. The effective amplification coefficient beta(cm(-1)) that depends on the population density difference Delta n = n((3)H(4))-n((3)F(4)) involved in the optical transition of Tm(3+) (S-band) was calculated by solving the rate equations of the system for continuous pumping with laser at 792 nm, using the Runge-Kutta numerical method including terms of fourth order. The population density inversion An as a function of Tb(3+) concentration was calculated by computational simulation for three pumping intensities, 0.2, 2.2 and 4.4 kWcm(-2). These calculations were performed using the experimental Tm -> Tb transfer rates and the optical constants of the Tm (0.1 mol%) system. It was demonstrated that 0.2 mol% of Tb(3+) propitiates best population density inversion of Tin(3+) maximizing the amplification coefficient of Tm-doped (0.1 mol%) GLKZ glass when operating as laser intensity amplification at 1.47 mu m. (C) 2007 Elsevier B.V. All rights reserved.