SUBSTITUTIONAL DONOR RELATED STATES AND AU/GE/NI CONTACTS TO ALXGA1-XAS

Current-voltage measurements performed on bulk AlxGa1-xAs equipped with Au/Ge/Ni contacts reveal surprising deviations from ohmic behaviour when the temperature is lowered to that of liquid nitrogen. Significant differences are observed between samples with x = 0.3 (direct band-gap material) and x = 0.5 (indirect band-gap material). The dominant states of the donor atoms Si (doping) or Ge are found to be responsible for such behaviour. Evidence for the existence of an effective-mass X-valley metastable state is also presented.

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses

Photoexpansion and photobleaching effects have been examined in glass compositions Ga10Ge25S65 and Ga5Ge25As5S65. Such compositions are promising for optical storage and planar waveguide applications. To evaluate the photoinduced effect, samples were exposed to 351 nm light, varying power density (3-10 W/cm(2)) and exposure time (0-120 min). The exposed areas have been analyzed using atomic force microscopy (AFM) and an expansion of 800 nm is observed for composition Ga10Ge25S65 exposed during 120 min and 5 W/cm(2) power density. The optical absorption edge measured by a spectrophotometer indicates a blue shift (80 nm) after illumination in the composition Ga10Ge25S65. The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using a energy dispersive analyzer (EDX) indicate an increase of the number of sulfur atoms in the irradiated area. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.

Internal standardization in graphite furnace atomic absorption spectrometry: Comparative use of As and Ge to minimize matrix effects on Se determination in milk

Arsenic and germanium have been evaluated as internal standards to minimize matrix effects on the direct determination of selenium in milk by graphite furnace atomic absorption spectrometry (GFAAS) using tubes with integrated platform, pre-treated with W together with I'd as chemical modifier. The efficiency of As and Ge as internal standards for 25 mu g L-1 Se plus 500 mu g (L)-1 As or Ge in diluted (1 + 9 v/v) milk plus 1.0% (v/v) HNO3 was evaluated by means of correlation graphs plotted from the normalized absorbance signals (n = 20) of internal standard (axis gamma) versus analyte (axis x). The equations that describe the linear regression were: A(As)= - 0.004 +/- 0.019 +/- 1.02 + 0.019 A(Se) (r=0.9967 +/- 0.005); A(Ge)= - 0.0 17 +/- 0.015 + 1.01 +/- 0.015 A(Se) (r = 0.9978 +/- 0.004). Samples and reference solutions were automatically spiked with 500 mu g L-1 Ge or As and 1.0% (v/v) HNO3 by the autosampler. For 20 mu L of aqueous standard solutions, analytical curves in the 5.00-40.0 mu g L-1 Se range were established using the ratio of Se absorbance to internal standard absorbance (A(Se)A(IS)) versus analyte concentration, and good linear correlations were obtained. The characteristic mass was 40 pg Se. Limits of detection were 0.55 and 0.40 mu g L-1 with As and Ge as the internal standard, respectively. Relative standard deviations (RSD) for a sample containing 25 mu g L-1 Se were 1.2% and 1.0% (n = 12) using As and Ge, respectively. The RSD without internal standardization was about 6%. The accuracy of the proposed method was evaluated by an addition-recovery experiment and all recovered values were in the 99-105% range with IS and in the 70-80% range without IS. Using Ge as the internal standard, results of analysis of standard reference materials were in agreement with certified values at a 95% confidence level. The selenium concentration for 10 analyzed milk samples varied from 5.0 to 20 mu g L-1. (c) 2005 Elsevier B.V. All rights reserved.

Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses

To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.

Espectroscopia de impedância em vidros 22Na2O·8CaO·65SiO2·5MO2 (M = Si, Ti, Ge, Zr, Sn, Ce) sem e com troca iônica Ag+ Na+

Pós-graduação em Física - IGCE

Estudo de composições vítreas no sistema ternário Ga-Ge-Te para o armazenamento de dados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Tailoring the refractive index of Ge-S based glass for 3D embedded waveguides operating in the mid-IR region

The photosensitivity of GeSx binary glasses in response to irradiation to femtosecond pulses at 800 nm is investigated. Samples with three different molecular compositions were irradiated under different exposure conditions. The material response to laser exposure was characterized by both refractometry and micro-Raman spectroscopy. It is shown that the relative content of sulfur in the glass matrix influences the photo-induced refractive index modification. At low sulfur content, both positive and negative index changes can be obtained while at high sulfur content, only a positive index change can be reached. These changes were correlated with variations in the Raman response of exposed glass which were interpreted in terms of structural modifications of the glass network. Under optimized exposure conditions, waveguides with positive index changes of up to 7.8x10−3 and a controllable diameter from 14 to 25 μm can be obtained. Direct inscription of low insertion losses (IL = 3.1 – 3.9 dB) waveguides is demonstrated in a sample characterized by a S/Ge ratio of 4. The current results open a pathway towards the use of Ge-S binary glasses for the fabrication of integrated mid-infrared photonic components.