Efficient energy upconversion emission in Tm3+/Yb3+-codoped TeO2-based optical glasses excited at 1.064 mu m

Efficient energy upconversion of cw radiation at 1.064 mum into blue, red, and near infrared emission in Tm3+-doped Yb3+-sensitized 60TeO(2)-10GeO(2)-10K(2)O-10Li(2)O-10Nb(2)O(5) glasses is reported. Intense blue upconversion luminescence at 485 nm corresponding to the Tm3+ (1)G(4)--> H-3(6) transition with a measured absolute power of 0.1 muW for 800 mW excitation power at room temperature is observed. The experimental results also revealed a sevenfold enhancement in the upconversion efficiency when the sample was heated from room temperature to 235 degreesC yielding 0.7 muW of blue absolute fluorescence power for 800 mW pump power. High brightness emission around 800 nm (F-3(4)--> H-3(6)) in addition to a less intense 655 nm ((1)G(4)--> H-3(4) and F-3(2,3)--> H-3(6)) fluorescence is also recorded. The energy upconversion excitation mechanism for thulium emitting levels is assigned to multiphonon-assisted anti-Stokes excitation of the ytterbium-sensitizer followed by multiphonon-assisted sequential energy-transfer processes. (C) 2001 American Institute of Physics.

Optical properties of remotely doped parabolic quantum wells

This work is intended to report on optical measurements in a parabolic quantum well with a two dimensional-three dimensional electron gas. Photoluminescence results show broad spectra which are related to emission involving several subbands on conduction band with the fundamental level of the valence band. This assumption is based on the behavior of the PL peak position and the full width at half maximum in the function of the incident power intensity. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Optical characteristics of Er3+-Yb3+ doped SnO2 xerogels

Er3+ doped SnO2 xerogels have been obtained from aqueous colloidal suspensions. Emission and excitation spectra were obtained and allowed the identification of two main families of sites for Er3+. In the first one Er3+ substitutes for Sn4+ in the SnO2 cassiterite structure. In the second Er3+ are found adsorbed at the SnO2 particle surface. For the first family of sites the technological important infrared Er3+ emission about 1.5 mum is efficiently excited through absorption at the SnO2 conduction band at 3.8 eV. on the other hand the emission due to adsorbed ions appears inhomogeneously broadened by the statistical distribution of sites available for Er3+ ions at the surface of the particles. Moreover it is not excited by the host. The emission of this second family of sites could be also excited by an energy transfer mechanism involving Yb3+ ions also adsorbed a posteriori at particles surface. Results are compared with spectra obtained for Eu3+ doped samples. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Photo-induced transformations in chalcogenide composite layers

Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in the light-sensitive amorphous chalcogenides were extended to composite layers, which consist of a wide band-gap material and an active material, Se60Te40 with a smaller band gap. Photo-stimulated interdiffusion and/or crystallization in layered Se0.6Tc0.4/As0.6Se0.94 and Se0.6Te0.4/SiOx were investigated with respect to their dependence on the compositional modulation of the multilayer at scale-dimensions (similar to3-10nm). It was established that PST due to the interdiffusion and crystallization can be efficiently operated by the composition of the adjacent layers of the multilayer which results in the change of the transformation rate and of the optical relief type (positive or negative). The comparison with a single Se0.6Te0.4 layer and with the known data for amorphous-Se/As2S3 multilayers supports the advantages of composite layers for amplitude-phase optical recording. (C) 2004 Published by Elsevier B.V.

Femtosecond nonlinear optical properties of tellurite glasses

The third-order nonlinear optical properties of tellurite glasses with different compositions were investigated in the femtosecond regime at 810 nm. Using the I-scan technique, positive nonlinear refractive indices of similar to 10(-15) cm(2)/W were measured. The authors also determined that nonlinear absorption was negligible for all studied samples. This result, added to their good chemical stability, indicates that tellurite glasses are promising materials for ultrafast photonic applications. (c) 2006 American Institute of Physics.

Influence of heat treatment on the optical properties of SnO2 : Sb thin films deposited by dip coating using aqueous solution

Antimony doped tin oxide thin films were deposited on glass by a chemical route derived from Pechini method. Particular emphasis was given to the microstructure of crystallized films. Crystalline phase formation was studied by grazing incident X-ray diffraction and by thermal analyses. Scanning electron microscopy was carried out for microstructure characterization, surface roughness was observed using scanning tunneling microscope and the optical transmittance measurements were performed in the wavelength range of 200-800 nm. (C) 2002 Kluwer Academic Publishers.

The use of silica-immobilized brown alga (Pilayella littoralis) for metal preconcentration and determination by inductively coupled plasma optical emission spectrometry

The brown alga Pilayella littoralis was used as a new biosorbent in an on-line metal preconcentration procedure in a flow-injection system. Al, Co, Cu and Fe were determined in lake water samples by inductively coupled plasma optical emission spectrometry (ICP-OES) after preconcentration in a silica-immobilized alga column. Like other algae, P. littoralis exhibited strong affinity for these metals proving to be an effective accumulation medium. Metals were bound at pH 5.5 and were displaced at pH < 2 with diluted HCl. The enrichment factors for Cu-II, Fe-III, Al-III and Co-II were 13, 7, 16 and 11, respectively. Metal sorption efficiency ranged from 86 to 90%. The method accuracy was assessed by using drinking water certified reference material and graphite furnace atomic absorption spectrometry (GFAAS) as a comparison technique. The column procedure allowed a less time consuming, easy regeneration of the biomaterial and rigidity of the alga provided by its immobilization on silica gel. (C) 2003 Elsevier B.V. All rights reserved.

Optical properties of Mg doped LiNbO3 thin films grown by polymeric precursor method.

Polymeric precursor solution was used to deposit by spin-coating pure and Mg doped LiNbO3 thin films on sapphire substrates. The effects of magnesium addition on crystallinity, morphology and optical properties of the annealed films were investigated. X-ray diffraction patterns indicate the oriented growth of the films. AFM studies show that the films are very homogeneous, dense and present smooth surfaces. The refractive index and optical losses obtained by the prism coupling method were influenced by the magnesium addition.

An ultra stable glass system for optical fiber devices

In this paper a modified chalcogenide glass was studied by X-ray powder diffraction, differential thermal analysis, infrared and Raman scattering spectroscopies. The study of this new matrix opens new perspectives to fabricate Pr3+-doped fibers to operate as an optical amplifier in the 1.3 mum telecommunications window. The Pr3+-doped 70Ga(2)S(3)-30La(2)S(3) glass was modified through the substitution of La2S3 by La2O3, which improves the thermal stability of these glasses without any modification of phonon energy. The possibility to pull a fiber from this glass system without any devitrification is easily achieved.

Structure characterization of molecular complexes for non-linear optical materials. II. 1 : 1 complexes of 4-methyl-morpholine-N-oxide (1) and 3-picoline-N-oxide (2) with 2,4,6-trinitrophenol, studied by X-ray, AM1 and DFT calculations

(1) C6H2N3O7- center dot C5H12NO2+, Mr = 346.26, P2(1)/c, a = 7.2356(6), b = 10.5765(9), c = 19.593(2) angstrom, 3 beta=95.101(6)degrees, V = 1493.5(2) angstrom(3), Z = 4, R-1 = 0.0414; (2) C6H2N3O7- center dot C6H8NO+, Mr = 38.24, P2(1)/n, a = 7.8713(5), b = 6.1979(7), c = 28.697(3) angstrom, beta = 90.028(7)degrees, V = 1400.0(2) angstrom(3), Z = 4, R-1 = 0.0416. The packing units in both compounds consist of hydrogen bonded cation-anion pairs. The (hyper)polarizabilities have been calculated for the crystallographic and optimized molecules, by AM1 and at the DFT/B3LYP(6-31G**) level.

Temperature and wavelength dependence of the thermo-optical properties of tellurite and chalcogenide glasses

The refractive index and the temperature coefficient of the optical path length change of tellurite (80TeO(2):20Li(2)O) and chalcogenide glasses (72.5Ga(2)S(3):27.5La(2)O(3)) were determined as a function of temperature (up to 150 degrees C) and wavelength (in the range between 454 and 632.8 nm). The tellurite glass exhibits the usual refractive index dispersion in the wavelength range analyzed, while anomalous refractive index dispersion was observed for the chalcogenide glass between 454 and 530 nm. The dispersion parameters were determined by means of the single-effective oscillator model. In addition, a strong dependence of the temperature coefficient of the optical path length on the photon energy and temperature was found for the chalcogenide glass. The latter was correlated to the shift of the optical band gap (or electronic edge) with temperature, which was interpreted by the electron-phonon interaction model. (C) 2007 American Institute of Physics.

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.

Microstructural and optical characterization of CaWO4 and SrWO4 thin films prepared by a chemical solution method

Stoichiometric CaWO4 and SrWO4 thin films were synthesized using a chemical solution processing, the so-called polymeric precursor method. In this soft chemical method, soluble precursors such as strontium carbonate, calcium carbonate and tungstic acid, as starting materials, were mixed in an aqueous solution. The thin films were deposited on glass substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Nucleation stages and surface morphology evolution of the thin films on glass substrates were studied by atomic force microscopy. The films nucleate at 300 degreesC, after the coalescence of small nuclei into larger grains yielding a homogeneous dense surface. XRD characterization of these films showed that the CaWO4 and SrWO4 phases crystallize at 400 degreesC from an inorganic amorphous phase. No intermediate crystalline phase was identified. The optical properties were also studied. It was found that CaWO4 and SrWO4 thin films have an optical band gap, E-gap=5.27 and 5.78 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity confirmed that this soft solution processing provides an inexpensive and environmentally friendly route for the preparation of CaWO4 and SrWO4 thin films. (C) 2003 Elsevier B.V. All rights reserved.

Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films

This work reports the preparation and characterization of (SnO2) thin films doped with 7 mol% Sb2O3. The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 x 10(-3) Omega cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.