Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing

Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 degrees C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d(33), regardless of bottom electrode is around (similar to 40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 mu C/cm(2)), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. (c) 2006 Elsevier Ltd. All rights reserved.

Residual monomer of reline acrylic resins - Effect of water-bath and microwave post-polymerization treatments

Objectives. This study compared the residual monomer (RM) in four hard chair-side reline resins (Duraliner II-D, Kooliner-K, Tokuso Rebase Fast-TRF and Ufi Gel hard-UGH) and one heat-polymerized denture base resin (Lucitone 550-L), which was processed using two polymerization cycles (short-LS and long-LL). It was also investigated the effect of two after polymerization treatments on this RM content.Methods. Specimens (n = 18) of each material were produced following the manufacturers' instructions and then divided into three groups. Group I specimens were left untreated (GI-control). Specimens of group II (GII) were given post-polymerization treatment by microwave irradiation. In group III (GIII), specimens were submitted to immersion in water at 55 degrees C (reline resins-10 min; denture base resin L-60min). The RM was analyzed using high performance liquid chromatography (HPLC) and expressed as a percentage of RM. Data were analyzed by two-way ANOVA followed by Tukey's test (alpha = 0.05).Results. Comparing control specimens, statistical differences were found among all materials (p < 0.05), and the results can be arranged as K (1.52%) > D (0.85%) > UGH (0.45%) > LL (0.24%) > TRF (0.14%) > LS (0.08%). Immersion in hot water (GIII) promoted a significant (p < 0.05) reduction in the RM for all materials evaluated compared to control (GI), with the exception of LL specimens. Materials K, UGH and TRF exhibited significantly (p < 0.05) lower values of RM after microwave irradiation (GII) than in the control specimens.Significance. The reduction in RM promoted by water-bath and microwave post-polymerization treatments could improve the mechanical properties and biocompatibility of the relining and denture base materials. (c) 2006 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Effect of the heat flux direction on electrical properties of SrBi2Nb2O9 thin films crystallized using a microwave oven

Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO2/Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was, placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 degreesC for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 degreesC for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 muC/cm(2) and 27.5 kV/cm, respectively. When the films were crystallized at 700 degreesC for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 muC/cm(2) and 170 kV/cm, respectively. (C) 2003 Elsevier B.V. All rights reserved.

The effect of heating rate on the sintering of agglomerated NaNbO3 powders

The effect of heating rate on the sintering of agglomerated NaNbO3 powders, processed by the polymeric precursors method, was studied. The results showed that the presence of agglomerated powder leads to a heterogeneous microstructure, with bimodal grain size distribution, after sintering. Using a high heating rate, the sintering of agglomerated particles was inhibits, leading to a homogeneous microstructure, with single grain size distribution. (C) 1998 Kluwer Academic Publishers.

Textured PbZr0.3Ti0.7O3 thin films produced by polymeric precursor method using microwave oven

PbZr0.3Ti0.7O3 (PZT) films were produced by polymeric precursor route and deposited by spin-coater technique on Pt(111)/Ti/SiO2/Si(100) substrates. The films were heat-treated using different furnaces: (a) a conventional furnace, at 700 degrees C; and (b) a domestic microwave oven, at 600 degrees C. The X-ray patterns revealed that both films are single phase and reflections were identified as belongs to the PZT phase. The intensity of these reflections showed a (111), (001) and (100) preferred orientation. Morphological and electrical characterizations showed that all samples present a rather different microstructure and both with high spontaneous polarization.

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

A fast microwave-assisted, acid-vapor, steam-cleaning procedure for autosampler cups

A new and fast procedure is proposed for cleaning autosampler cups using acid-vapor steam-cleaning with a miniaturized assembly in a microwave-heated sealed Teflon vessel. A glass cactus-shaped holder was made to support six polyethylene autosampler cups (volume, 2.0 mt) inside a 100 mt microwave vessel. Regent-grade nitric acid was added to the vessels, and the system was heated in a microwave oven for 5 min at 300 W. Chromium was determined by graphite-furnace atomic-absorption spectrophotometry. The blank values were lower with cleaned cups compared to untreated cups (i.e., as received from supplier). The quantification limits, estimated from detection limits established with Milli-Q water, were 0.66 and 0.95 mu g Cr L-1 for cleaned and untreated auto-sampler cups, respectively. (C) 1998 Elsevier B.V. B.V. All rights reserved.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Microwave synthesis of calcium bismuth niobate thin films obtained by the polymeric precursor method

The crystal structure, surface morphology and electrical properties of layered perovskite calcium bismuth niobate thin films (CaBi2Nb2O9-CBN) deposited on platinum coated silicon substrates by the polymeric precursor method have been investigated. The films were crystallized in a domestic microwave and in a conventional furnace. X-ray diffraction and atomic force microscopy analysis confirms that the crystallinity and morphology of the films are affected by the different annealing routes. Ferroelectric properties of the films were determined with remanent polarization P-r and a drive voltage V-c of 4.2 mu C/cm(2) and 1.7 V for the film annealed in the conventional furnace and 1.0 mu C/cm(2) and 4.0 V for the film annealed in microwave furnace, respectively. A slight decay after 10(8) polarization cycles was observed for the films annealed in the microwave furnace indicating a reduction of the domain wall mobility after interaction of the microwave energy with the bottom electrode. (C) 2006 Elsevier Ltd. All rights reserved.

Decomposição de argilas em forno de microondas e determinação simultânea dos seus constituintes principais por espectrometria de emissão óptica em plasma indutivamente acoplado

ANALYSIS OF CLAYS BY INDUCTIVELY COUPLED PLASMA OPTICAL EMISSION SPECTROMETRY AFTER CLOSED-VESSEL MICROWAVE-ASSISTED ACID DECOMPOSITION. In this work a closed-vessel microwave-assisted acid decomposition procedure for clays was developed. Aluminum, Ca, Fe, K, Mg, Na, Si, and Ti were determined in clay digestates by inductively coupled plasma optical emission spectrometry. The most critical parameter for total decomposition of clays was the composition of the reagent mixture. The applied power and the heating time exerted a less critical influence. Best decomposition conditions were attained using a reagent mixture containing 4 mL aqua regia plus 3 mL HF and the heating program was implemented in 12 min. The accuracy of the results was demonstrated using two standard reference materials and a paired t-test showed a good agreement between determined and certified values at a 95% confidence level.

INFLUENCE OF HIGH MICROWAVE DIELECTRIC-CONSTANTS ON THE LINESHAPE OF CONDUCTION-ELECTRON SPIN-RESONANCE

Some synthetic metals show in addition to good conductivity, high microwave dielectric constants. In this work, it is shown how conduction-electron spin resonance(CESR) lineshape can be affected by these high constants. The conditions for avoiding these effects in the CESR measurements are discussed as well as a method for extracting microwave dielectric constants from CESR lines. (C) 1995 Academic Press, Inc.