171 resultados para Structural and electrical properties
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SnO2:Sb multi-layer coatings were prepared by the Pechini method. An investigation was made of the influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films. The use of a multi-layer system as an alternative form of increasing the packing and. thus. decreasing porosity proved to be efficient, decreasing the system's resistivity without altering its optical properties. (C) 2002 Elsevier B.V. B.V. All rights reserved.
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Tin oxide has wakened up great scientific and technological interest for its potential use in varistors production and as gas sensor. In order to improve the microstructural and electrical properties in SnO2 varistor ceramics, the influence of differents dopants used, like TiO2 and Al2O3, is under research. The effect of TiO2 and Al2O3 on the properties of Sn-Co-Nb varistor systems obtained by the Pechini method has been investigated in this work. Characterization of synthesized raw material was performed by X-Ray Diffraction (XRD) and Scanning Electronic Microscopy (SEM). The microstructural and electrical characterization of sintered samples show that the TiO2 favors the grain growth and the Al2O3 contributes to the decrease it, effect that is manifested in the Sn-Co-Nb varistor systems. Breakdown field increase up to 6300V/cm with increasing Al2O3 content and non-linear coefficients with alpha=22 were obtained.
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Tin dioxide is an n-type semiconductor that when doped with other metallic oxides exhibits non-linear electric behavior with high non-linear coefficient values typical of a varistor. In this work, electrical properties of the SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 ceramics systems were studied with the objective of analyzing the influence of MnO2 on sintering behavior and electrical properties of these systems. The compacts were prepared by powder mixture process and sintered at 1300°C for 1 hour, in air, using a constant heating rate of 10°C/min. The morphological and structural properties were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The densities of the sintered ceramics were measured using the Archimedes method. The SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 systems presented breakdown fields (Eb) about 3100 V.cm-1 and 3800 V.cm-1, respectively, and non-linear coefficient (α) about 10 and 20, respectively.
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Acetylacetone has been used as a chemical modifier for the synthesis of undoped and Tb3+-doped Y3Al5O12 powders. A systematic investigation concerning its influence on the structural and morphological properties of amorphous and crystallized samples has been carried out. These properties have been comparatively studied by means of X-ray diffraction, infrared spectroscopy, SEM, XAS and SAXS. 27Al NMR and EPR experiments have been performed to complete the study. The combined results have evidenced that acetylacetone promotes organic groups departure during calcination, entailing a better structural organization at lower temperatures compared with unmodified powders. Structuration has been proven to occur at short-scale range until a 600°C heating treatment before being extended by coalescence at higher temperatures. Finally, the presence of acac ligands on the alkoxides leads to a monomer-cluster aggregation process, and thus to a more open network. © 2010 The Royal Society of Chemistry.
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Bismuth titanate ceramics (Bi 4Ti 3O 12) with 10 wt% in excess of bismuth (BIT10) were prepared by the polymeric precursor method and sinterized in microwave (MW) and conventional furnaces (CF). The effect of microwave energy on structural and electrical behavior of BIT10 ceramics was investigated by means of X-ray diffraction (XRD), Scanning electron microscopy (SEM) and electrical measurements. The results of the BIT10 ceramics processed in the microwave furnace (MW) showed a high structural organization compared to conventional treatment (CF). Size of grains and dieletrical properties are influenced by annealing conditions while coercitive field is not dependent on it. The maximum dielectric permittivity (12000) was obtained for the sample sintered in the microwave furnace. Piezoelectric force microscopy images reveals that in-plane response may not change its sign upon polarization switching, while the out-of-plane response does with the influence of microwave energy. Copyright © 2010 American Scientific Publishers All rights reserved.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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In this work Ba0.99Eu0.01MoO4 (BEMO) powders were prepared by the first time by the Complex Polymerization Method. The structural and optical properties of the BEMO powders were characterized by Fourier Transform Infra-Red (FTIR), X-ray Diffraction (XRD), Raman Spectra, High-Resolution Scanning Electron Microscopy (HR-SEM) and Photoluminescent Measurements. XRD show a crystalline scheelite-type phase after the heat treatment at temperatures greater than 400 degrees C. The ionic radius of Eu3+ (0.109 nm) is lower than the Ba2+ (0.149 nm) one. This difference is responsible for the decrease in the lattice parameters of the BEMO compared to the pure BaMoO4 matrix. This little difference in the lattice parameters show that Eu3+ is expected to occupy the Ba2+ site at different temperatures, stayed the tetragonal (S-4) symmetry characteristic of scheelite-type crystalline structures of BaMoO4. The emission spectra of the samples, when excited at 394 nm, presented the D-5(1)-> F-7(0, 1 and 2) and D-5(0)-> F-7(0, 1, 2, 3 and 4) Eu3+ transitions at 523, 533, 554, 578, 589, 614, 652 and 699 nm, respectively. The emission spectra of the powders heat-treated at 800 and 900 degrees C showed a marked increase in its intensities compared to the materials heat-treated from 400 to 700 C. The decay times for the sample were evaluated and all of them presented the average value of 0.61 ms. Eu3+ luminescence decay time follows one exponential curve indicating the presence of only one type of Eu3+ symmetry site.
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The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering were analyzed in a wide composition range (0 < x < 0.18). The films were structurally characterized using x-ray diffraction with Rietveld refinement. The corresponding vibrational properties were investigated using micro-Raman and Fourier transform infrared spectroscopies. The films present a high crystallized fraction, crystallites having wurtzite structure, and high orientation texture with the c axis oriented perpendicular to the substrate surface. Rietveld analysis indicates that Mn atoms are incorporated substitutionally into Ga positions and show that the ionic character of cation-N bonds along the c axis is favored by the Mn incorporation. No evidence for Mn segregation or Mn rich phases was found in the composition range analyzed. Micro-Raman scattering spectra and infrared absorption experiments showed progressive changes with the increase of x and monotonic shifts of the GaN TO and LO peaks to lower frequencies. The structural and vibrational analyses are compared and the influence of Mn on the static and dynamic properties of the lattice is analyzed. (C) 2007 American Institute of Physics.
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The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.
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The effect of Fe2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01CoO + 0.005Nb(2)O(5) + xFe(2)O(3) system, where x = 0.005 or 0.01, was considered in this study. The samples were sintered at 1300degreesC for 2 h. Microstructure analysis by scanning electron microscopy showed that the effect of Fe2O3 addition is to decrease the SnO2 grain size. J x E curves indicated that the system exhibit a varistor behavior and the effect of Fe2O3 is to increase both, the non-linear coefficient (alpha) and the breakdown voltage (E-r). Considering the Schottky thermionic emission model the potential height and width were estimated. Small amount addition of Fe2O3 to the basic system increases both the potential barrier height and width. (C) 2002 Kluwer Academic Publishers.
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The influence of current density, at the interval 5-100 mA cm-2, on the structural and magnetic properties of electrodeposited (Co 100-xNix)100-yWy alloys (x = 23-33.5 at. % Ni, y = 1.7-7.3 at. % W) was studied from a glycine-containing bath. W-content decreases with the increase of the current density magnitude. X-ray data have shown stabilization of hexagonal close packed, face centered cubic or a mixture of these structures by modulating the applied cathodic current density, for values lower than 50 mA cm-2. Two structural phase transitions were observed: one from hexagonal close packed to face centered cubic structural transition occurring for a current density of 20 mA cm -2, and another one, from cubic crystalline phase to amorphous state, which happens for values higher than 50 mA cm-2. These structural phase transitions seem to be associated with the W-content as well as average crystalline grain sizes that reduce with increasing the current density value. The grain size effect may explain the face centered cubic stabilization in Co-rich CoNiW alloys, which was initially assumed to be basically due to H-adsorption/incorporation. Magnetic properties of Co-rich CoNiW alloys are strongly modified by the current density value; as a result of the changes on the W-content and their structural properties© 2013 Elsevier B.V. All rights reserved.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)