Cutting forces in turning of gray cast iron using silicon nitride based cutting tool

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Dielectric behavior of PVDF/POMA blends that have a low doped POMA content

The real (epsilon') and imaginary (epsilon) components of the complex permittivity of blends of PVDF [poly(vinylidene fluoride)] with POMA [poly(o-methoxyaniline)] doped with toluenosulfonic acid (TSA) containing 1, 2.5, and 5 wt % POMA-TSA were determined in the frequency interval between 10(2) and 3 X 10(6) Hz and in the temperature range from -120 up to 120degreesC. It was observed that the values of epsilon' and epsilon had a greater increase with the POMA-TSA content and with a temperature in the region of frequencies below 10 kHz. This effect decreased with frequency and it was attributed to interfacial polarization. This polarization was caused by the blend heterogeneity, formed by conductive POMA-TSA agglomerates dispersed in an insulating matrix of PVDF. The equation of Maxwell-Garnett, modified by Cohen, was used to evaluate the permittivity and conductivity behavior of POMA-TSA in the blends. A strong decrease was observed in POMA-TSA conductivity in the blend, which was bigger the lower the POMA-TSA content in the blend. This decrease could have been caused either by the POMA dedoping during the blend preparation process or by its dispersion into the insulating matrix. (C) 2002 Wiley Periodicals, Inc.

The temperature coefficient of the optical path length as a function of the temperature in different optical glasses

An interferometric technique was used to determine the temperature coefficient of the optical path length (dS/dT) as a function of the temperature in several optical glasses. The temperature range was between 25degreesC and 180degreesC. The studied samples included undoped and doped oxide glasses, such as low silica calcium aluminosilicate, phosphates, borates and also chalcogenides. The oxide glasses had dS/dT between 10 X 10(-6) K-1 and 20x10(-6) K-1, while for the chalcogenides, these were around 70 x 10(-6)K(-1). The results showed that dS/dTs increased with the temperature in all samples. For samples doped with Nd the dS/dT values were found to be independent of concentration. on the other hand, for the phosphate glass doped with Cr, dS/dT increased about 5% when compared with the Nd doped one. In conclusion, the used interferometric method, which is a considerably simpler and a lower cost technique, and is a useful tool to measure dS/dT in semi-transparent glasses as a function of the composition and temperature. (C) 2004 Elsevier B.V. All rights reserved.

Determination of the photoinduced birefringence and of the refractive index by Brewster method of epoxy resin doped with CdS

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Hydrothermal Microwave: A New Route to Obtain Photoluminescent Crystalline BaTiO3 Nanoparticles

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Phase transition and dielectric properties of La-doped Pb(Zr, Ti)O-3 antiferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Kinetic asymmetry in the gel-liquid crystalline state transitions of DDAB vesicles studied by differential scanning calorimetry

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and Characterization of Novel, Highly Crystalline Poly(vinyl alcohol) Microspheres for Chemoembolization Therapy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Commissioning and performance of the CMS silicon strip tracker with cosmic ray muons

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Silicon monosulphide radiative association

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E(1)Sigma(+) and A(1)Pi states of SiS. For temperatures ranging from similar to 1000 to similar to 14 000 K, the rate coefficients are found to vary from 8.43 x 10(-17) to 2.69 x 10(-16) cm(3) s(-1). Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.

Influence of the Solvent Evaporation Rate on the Crystalline Phases of Solution-Cast Poly(Vinylidene Fluoride) Films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The role of pressure in the electrical transport of doped plasticized polyanilines

The behaviour of dc longitudinal and transverse conductivity in self-assembled plastdoped films of polyaniline has been studied over the range of 9 K to 320 K, under different applied mechanical pressures. We observe a progressive evolution of the conductivity picture as the applied pressure is increased, especially in the transverse direction, where the conductivity tends to lower as the pressure is increased. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Gadolinium-doped cerium oxide nanorods: novel active catalysts for ethanol reforming

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Strain and vacancy cluster behavior of vanadium and tungsten-doped Ba[Zr(0.10)Ti(0.90)]O(3) ceramics

Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr(0.10)Ti(0.90)]O(3), (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics. (c) 2008 American Institute of Physics.