320 resultados para Nanocrystalline TiO2
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Photoluminescence (PL) at room temperature has been achieved in amorphous thin films and powders of the TiO2-PbO system. They were prepared by the polymeric precursor method with [PbO]/[TiO2] molar ratios ranging from 0.0 to 1.0. The energy position of maximum PL emission and the PL intensity showed dependence on Pb concentration. The Pb addition suggests an increase in the number of nonbridging oxygens (NBO) in the amorphous TiO2 network. These results support the relationship between photoluminescence and structure in TiO2-based amorphous materials.
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The effect of the bath pH on the electrodeposition of nanocrystalline Pd-Co alloys and on their magnetic properties was studied. The pH practically did not affect the alloy composition. Conversely, the pH showed a significant influence on the shape and size of crystallites. Two different crystallites morphology were observed depending on the bath pH. A crystallite size ranging from 18.2 to 30 nm was obtained from X-ray diffractometry (XRD) patterns using the Scherrer's method. Also from the XRD patterns the lattice strain percentage was calculated and correlated with the residual stress, which probably originated during the film electrodeposition on the substrate. Some alloy magnetic properties showed small variations. In contrast, high and unexpected coercivities were obtained reaching a maximum of 1.69 kOe at pH 5.5. The high coercivity values were attributed to the presence of residual stress at the film-substrate interface, which increased as the bath pH and crystallite size decrease, both of them contributing simultaneously to increase in coercivity. (C) 2006 Elsevier B.V. All rights reserved.
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Nanocrystalline Pd-Co alloys were obtained by electrodeposition from an ammoniacal chloride bath. The influence of the crystallite size and the residual stress on the magnetic properties of the alloys was investigated. The residual stress increased as the applied current density was increased. It was associated to the high nucleation rate during electrodeposition and correlated to the lattice strain, estimated from the XRD patterns. Also from the XRD patterns the average crystallite size and the lattice constant were determined by Scherrer's and Rietveld's methods, respectively. Both parameters were directly influenced by the applied current density. Magnetic properties such as coercivity, remanence, saturation magnetization and squareness showed strong dependence on the residual stress and crystallite size. Coercivity higher than 1 kOe was achieved when a high current density was applied. High coercivity was attributed to the presence of residual stress and to the small crystallite size of deposits. (C) 2007 Elsevier B.V. All rights reserved.
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Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.
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a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.
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Electrochemical lithium intercalation in thin films of CeO2-TiO2 and WO3, prepared by the sol-gel technique was investigated with cyclic voltammetry and spectroelectrochemical techniques in propylene carbonate solutions. A solid state system having the configuration WO3/Ormolyte/CeO2-TiO2 has been assembled. The solid electrolyte, an organically modified electrolyte (ormolyte), was prepared with different [O]/[Li] ratios. The transmittance variation of this system during a potentiostatic step from -0.7 V to 0.8 V was about 35% at 550 nm.
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A polymeric precursor method based on the Pechini process was successfully used to synthesize zirconia-12 mol% ceria ceramic powders, the influence of the main process variables (citric acid-ethylene glycol ratio, citric acid-total oxides ratio and calcination temperature) on phase formation and powder morphology (surface area and crystallite size) were investigated. The thermal decomposition behavior of the precursor is presented. X-ray diffraction (XRD) patterns of powders revealed a crystalline tetragonal zirconia single-phase, with crystallite diameter ranging from 6 to 15 nm. The BET surface areas were relatively high, reaching 95 m(2) g(-1) Nitrogen adsorption/desorption on the powders suggested that nonaggregated powders could be attained, depending on the synthesis conditions. Copyright (C) 1999 John Wiley & Sons, Ltd.
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A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.
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The growth of nanocrystalline Ga1-zMnxN (0.00 <= x <= 0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N-2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (10 0), c-Si (10 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of alpha-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. (c) 2006 Elsevier B.V. All rights reserved.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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This work illustrates the advancement of research on TiO2-based electroceramics. In this work will be presented that the addition of different dopants, as well as thermal treatments at oxidizing and inert atmosphere, influences of the densification, the mean grain size and the electrical properties of the TiO2-based varistor ceramics. Dopants like Ta2O5, Nb2O5, and Cr2O3 have an especial role in the barrier formation at the grain boundary in the TiO2 varistors, increasing the nonlinear coefficient and decreasing the breakdown electric field. The influence of Cr'(Ti) is to increase the O' and O'(2) adsorption at the grain boundary interface and to promote a decrease in the conductivity by donating electrons to O-2 adsorbed at the grain boundary. In this paper, TiO2 and (Sn,Ti)O-2-based studies of polycrystalline ceramics, which show a non-linear I-V electrical response typical of low voltage varistor systems are also presented. All these systems are potentially promising for varistor applications. (C) 2004 Kluwer Academic Publishers.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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We report on electrical relaxation measurements of (1-x)NH4H2PO4-xTiO(2) (x = 0.1) composites by admittance spectroscopy, in the 40-Hz-5-MHz frequency range and at temperatures between 303 and 563 K. Simultaneous thermal and electrical measurements on the composites identify a stable crystalline phase between 373 and 463 K. The real part of the conductivity, sigma', shows a power-law frequency dependence below 523 K, which is well described by Jonscher's expression sigma' = sigma(0)(1 + (omega/omega(p))(n)), where sigma(0) is the dc conductivity, omega(p)/2 pi = f(p) is a characteristic relaxation frequency, and n is a fractional exponent between 0 and 1. Both sigma(0) and f(p) are thermally activated with nearly the same activation energy in the II region, indicating that the dispersive conductivity originates from the migration of protons. However, activation energies decrease from 0.55 to 0.35 eV and n increases toward 1.0, as the concentration of TiO2 nanoparticles increases, thus, enhancing cooperative correlation among moving ions. The highest dc conductivity is obtained for the composite x = 0.05 concentration, with values above room temperature about three orders of magnitude higher than that of crystalline NH4H2PO4 (ADP), reaching values on the order of 0.1 (Omega cm)(-1) above 543 K.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)