Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

A probabilistic model for elastic-plastic fracture analysis of plane and axisymmetric structures

This work presents a methodology for elastic-plastic fracture reliability analysis of plane and axisymmetric structures. The structural reliability analysis is accomplished by means of the FORM analytical method. The virtual crack extension technique based on a direct minimization of potencial energy is utililized for the calculation of the energy release rate. Results are presented to illustrate the performance of the adopted methodology.

An implicit BEM formulation to model strong discontinuities in solids

A boundary element method (BEM) formulation to predict the behavior of solids exhibiting displacement (strong) discontinuity is presented. In this formulation, the effects of the displacement jump of a discontinuity interface embedded in an internal cell are reproduced by an equivalent strain field over the cell. To compute the stresses, this equivalent strain field is assumed as the inelastic part of the total strain. As a consequence, the non-linear BEM integral equations that result from the proposed approach are similar to those of the implicit BEM based on initial strains. Since discontinuity interfaces can be introduced inside the cell independently on the cell boundaries, the proposed BEM formulation, combined with a tracking scheme to trace the discontinuity path during the analysis, allows for arbitrary discontinuity propagation using a fixed mesh. A simple technique to track the crack path is outlined. This technique is based on the construction of a polygonal line formed by segments inside the cells, in which the assumed failure criterion is reached. Two experimental concrete fracture tests were analyzed to assess the performance of the proposed formulation.

Preparation of ceramic membranes from surface modified tin oxide nanoparticles

The preparation of crack-free SnO2 supported membranes requires the development of new strategies of synthesis capable to allow controlled changes of surface chemistry and to improve the processability of supported layers. In this way, the controlled modification of the SnO2 nanoparticle surface by adding capping molecules like Tiron(R) ((OH)(2)C6H2(SO3Na)(2)) during the sol-gel process was studied, aiming to obtain high performance membranes. Colloidal suspensions were prepared by hydrolyzing SnCl4.5H(2)O aqueous solution with NH4OH in presence of Tiron(R). The effect of the amount of Tiro(R) (from I to 20 wt.%) on the structural features of nanoparticles, powder redispersability and particle-solution interface properties was investigated by X-ray powder diffraction (XRPD), extended X-ray absorption fine structure (EXAFS), quasi-elastic light scattering and electrophoretic mobility measurements. XRPD and EXAFS results showed that the addition of Tiron(R) up to 20 wt.% to colloidal suspensions does not affect the crystallite size of SnO2 primary particles, determined around 2-3 nm. This value is comparable to the hydrodynamic size measured after redispersion of powder prepared with amount of Tiro(R) higher than 7.5 wt.%, indicating the absence of condensation reactions between primary particles after the initial precipitation step. As a consequence the powder with amount of Tiron(R) > 7.5 wt.%, can be fully redispersed in aqueous solution at pH greater than or equal to I I until a nanoparticle concentration of 6 vol.%. The electrophoresis measurements showed a decrease of the isoelectric point by increasing the amount of grafted Tiron(R) at the SnO2 nanoparticle surface, resulting in negatively charged particle-solution interface in all the studied pH range (2-11). These features govern the gelation process favoring the preparation of crack-free SnO2 supported membranes. The control exercised by Tiron(R) modifying agent in the aggregation process allows the fine-tuning of the porosity, from 0.124 to 0.065 cm(3) g(-1), and mean pore size, from 6.4 to 1.9 nm, as the amount of grafted molecules increases from 0 to 10 wt.%. In consequence, the membrane cut-off determined by filtration of polyethylene glycol standard solutions can be screened from 1500 to 3500 g mol(-1). (C) 2002 Elsevier B.V. B.V. All rights reserved.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Critical current degradation of Bi-2223 composite tapes induced by cyclic deformation and fatigue-related effects

Application of high temperature superconductor Bi2Sr2Ca2Cu3Ox. (Bi-2223) compound embedded in an Ag matrix requires the knowledge of critical current as a function of mechanical properties. Commercial tapes available in different types have been developed in industrial production scale in which a combination of small diameter filaments, long tape lengths and a ductile matrix results in a conductor with low crack formation and good tolerance against strain. The measurement of critical current and the evaluation of n-index from V-I characteristic curves of Bi-2223/Ag composite tapes subjected to an initial bending strain as a function of number of thermal cycles were done for two types of Bi-2223/Ag composite tapes: with and without steel tape reinforcement. The results showed that tapes with reinforcement presented small critical current degradation as a function of the number of thermal cycles whereas tapes without reinforcement exhibited steadily critical current degradation caused by the propagation of cracks. The n-index followed the same critical current behavior.

Preparation of 9/65/35 PLZT thin films deposited by a dip-coating process

Crack-free polycrystalline PLZT (Pb,a)(Zr,Ti)O-3 thin films with the perovskite structure were prepared by dir-coating using the Pechinis process. Lead acetate, hydrated lanthanum carbonate, zirconium n-propoxide and titanium isopropoxide were used as raw materials. The viscosity of the solution was adjusted in the range of 20 to 56 cP and the films were deposited by a dip-coating process on silicon (100) as substrate. Solutions with ionic concentration of 0.1 and 0.2 M were used. Thin film deposition was accomplished by dipping the substrates in the solution with control of withdrawal speed from 5 to 20 mm/min. The thin films were thermally treated in two steps: at 300 degreesC amid 650 degreesC. The influence of withdrawal speed. viscosity, heating rate and ionic concentration on the morphology of PLZT thin film was discussed. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Structural and electrical properties of SrBi2(Ta0.5Nb0.5)(2)O-9 thin films

SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 degrees C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (P-r) and coercive field (E-c) were 5.1 mu C/cm(2) and 96 kV/cm, respectively. (C) 2007 Published by Elsevier B.V.

Probabilistic neural network to predict cracks in taphole mud used in blast furnaces

One of the major problems facing Blast Furnaces is the occurrence of cracks in taphole mud, as the underlying causes are not easily identifiable. The absence of this knowledge makes it difficult the use of conventional techniques for predictability and mitigation. This paper will address the application of Probabilistic Neural Network using the Matlab software as a means to detect and control such cracks. The most relevant BF operational variables were picked through the statistic tool "Principal Component Analysis - PCA." Based upon the selection of these variables a probabilistic neural network was built. A set of BF operational data, consisting of 30 controlling variables, was divided into 2 groups, one of which for network training, and the other one to validate the neural network. The neural network got 98% of the cases right. The results show the effectiveness of this tool for crack prediction in relation to clay intrinsic properties and as a result of the fluctuation in operational variables.

Predição de propagação de fissuras através de modelos constitutivos locais e técnica de construção progressiva da trajetória de descontinuidade

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Aerosol Deposition of Ba0.8Sr0.2TiO3 Thin Films

In this work we optimized conditions for aerosol deposition of homogeneous, nano-grained, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0) or Si covered by platinum (Pt (1 1 1) /Ti/SiO2/Si). Investigation showed that the best films were obtained at substrate temperature of 85 degrees C. After deposition films were slowly heated up to 650 degrees C, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crack-free, and smooth with rms roughness lower than 4 nm for both substrates.