Dimmable electronic ballast with high power-factor SEPIC preregulator, for multiple tubular fluorescent lamps

An electronic ballast for multiple tubular fluorescent lamps is presented in this paper. The proposed structure features high power-factor, dimming capability, and soft-switching to the semiconductor devices operated in high frequencies. A Zero-Current-Switching - Pulse-Width-Modulated (ZCS-PWM) SEPIC converter composes the rectifying stage, controlled by the instantaneous average input current technique, performing soft-commutations and high input power factor. Regarding the inverting stage, it is composed by a classical resonant Half-Bridge converter, associated to Series Parallel-Loaded Resonant (SPLR) filters. The dimming control technique employed in this Half-Bridge inverter is based on the phase-shift in the current processed through the sets of filter + lamp. In addition, experimental results are shown in order to validate the developed analysis.

Optimized allocation of sectionalizing switches and control and protection devices for reliability indices improvement in distribution systems

Reliability of power supply is related, among other factors, to the control and protection devices allocation in feeders of distribution systems. In this way, optimized allocation of sectionalizing switches and protection devices in strategic points of distribution circuits, improves the quality of power supply and the system reliability indices. In this work, it is presented a mixed integer non-linear programming (MINLP) model, with real and binary variables, for the sectionalizing switches and protection devices allocation problem, in strategic sectors, aimed at improving reliability indices, increasing the utilities billing and fulfilling exigencies of regulatory agencies for the power supply. Optimized allocation of protection devices and switches for restoration, allows that those faulted sectors of the system can be isolated and repaired, re-managing loads of the analyzed feeder into the set of neighbor feeders. Proposed solution technique is a Genetic Algorithm (GA) developed exploiting the physical characteristics of the problem. Results obtained through simulations for a real-life circuit, are presented. © 2004 IEEE.

Technology assessment for power quality mitigation devices - Micro-DVR case study

This work presents a case study on technology assessment for power quality devices. A system compatibility test protocol for power quality mitigation devices was developed in order to evaluate the functionality of three-phase voltage restoration devices. In order to case test this test protocol, a development platform with reduced power for DVR (Dynamic Voltage Restorer), the Micro-DVR, was tested, and results were discussed based on voltage disturbances standards. ©2008 IEEE.

Dielectric tunability in (1-x)[Pb(Mg 1/3Nb 2/3)O 3]-xPbTiO 3 ceramics for tunable devices application

The dielectric properties of the 0.65[Pb(Mg 1/3Nb 2/3)O 3]-0.35PbTiO 3 ferroelectric ceramic composition were investigated viewing the capability to be used for tunable microwave applications. The dielectric response has been studied for three selected temperatures (300 K, 370 K and 400 K), below the paraelectric- ferroelectric phase transition temperature, as a function of the applied 'bias' electric field. The obtained dielectric tunability was found to be around 60 %, under an electric field of 19 kV/cm, which makes the studied ceramic composition an excellent candidate for application in the electro-electronic industry, as tunable devices. © 2010 IEEE.

Electrical Power Distribution System modeling with VHDL-AMS for the construction of a Real-Time Digital Simulator using FPGAS devices

This paper presents a distribution feeder simulation using VHDL-AMS, considering the standard IEEE 13 node test feeder admitted as an example. In an electronic spreadsheet all calculations are performed in order to develop the modeling in VHDL-AMS. The simulation results are compared in relation to the results from the well knowing MatLab/Simulink environment, in order to verify the feasibility of the VHDL-AMS modeling for a standard electrical distribution feeder, using the software SystemVision™. This paper aims to present the first major developments for a future Real-Time Digital Simulator applied to Electrical Power Distribution Systems. © 2012 IEEE.

Analysis on turning Ti-6Al-4V with different cooling methods

The aim of this paper is to optimize the machining of Ti-6Al-4V alloy, by studying the chip formation, roughness and tool wear for different cooling conditions. The results were compared between cooling methods, minimal quantity of fluid (MQF) and flooding, and also without fluid for the tool H13A. The turning of Ti-6Al-4V has shown good results on roughness (0, 8μm) and tool life, which was 11% lower with MQF than with the flooding method. The tool wear causes variation of the shear angle, which promotes strength hardening of the chip. As a result, the machined surface could be damaged. The use of the cutting fluid helps to save the cutting edge and could reduce the strength hardening. Nevertheless, it could also facilitate the formation of built-up edge. The nucleation of alpha lamellar colonies can occur due to a combination of deformation rates and temperature, mainly when the flooding is used, but it's not conclusive. The lamellar colonies were also found with the MQF in some regions, however, this structure did not show hardness variation compared to equiaxial. For all this reasons, the machining parameters might be carefully chosen.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Análise de coletores solares com armazenadores integrados baseado na geometria cubóide utilizando CFD

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A influência da aplicação de fluído de corte no torneamento da liga de aluminio AA 7075

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A valiação da integridade superficial e usinabilidade de engrenagens forjadas utilizando fresamento com alta velocidade de corte

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fatores de transcrição reguladores do metabolismo do glicogênio em Neurospora crassa: caracterização parcial e identificação de alvos de ligação por ChIP-Seq

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fabricação de dispositivos para aplicação de conceitos de microfluídica a uma Língua eletrônica

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Natural-rubber-based flexible microfluidic device

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Geometry effects on the electronic properties of multi-open dots structures

In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.