Evaluation of Bulk and Surfaces Absorption Edge Energy of Sol-Gel-Dip-Coating SnO2 Thin Films

The absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110) and (101) surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110) and (101) surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101) surface, which presents direct bandgap transition.

Theoretical analysis of the energy levels induced by oxygen vacancies and the doping process (Co, Cu and Zn) on SnO2 (110) surface models

Density functional calculation at B3LYP level was employed to study the surface oxygen vacancies and the doping process of Co, Cu and Zn on SnO2 (110) surface models. Large clusters, based on (SnO2)(15) models, were selected to simulate the oxidized (Sn15O30), half-reduced (Sn15O29) and the reduced (Sn15O28) surfaces. The doping process was considered on the reduced surfaces: Sn13Co2O28, Sn13Cu2O28 and Sn13Zn2O28. The results are analyzed and discussed based on a calculation of the energy levels along the bulk band gap region, determined by a projection of the monoelectron level structure on to the atomic basis set and by the density of states. This procedure enables one to distinguish the states coming from the bulk, the oxygen vacancies and the doping process, on passing from an oxidized to a reduced surface, missing bridge oxygen atoms generate electronic levels along the band gap region, associated with 5s/5p of four-/five-fold Sn and 2p of in-plane O centers located on the exposed surface, which is in agreement with previous theoretical and experimental investigations. The formation energy of one and two oxygen vacancies is 3.0 and 3.9 eV, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Periodic study on the structural and electronic properties of bulk, oxidized and reduced SnO2(110) surfaces and the interaction with O-2

The structural and electronic properties of bulk and both oxidized and reduced SnO2(110) surfaces as well as the adsorption process of O-2 on the reduced surface have been investigated by periodic DFT calculations at B3LYP level. The lattice parameters, charge distribution, density of states and band structure are reported for the bulk and surfaces. Surface relaxation effects have been explicitly taken into account by optimizing slab models of nine and seven atomic layers representing the oxidized and reduced surfaces, respectively. The conductivity behavior of the reduced SnO2(110) surface is explained by a distribution of the electrons in the electronic states in the band gap induced by oxygen vacancies. Three types of adsorption approaches of O-2 on the four-fold tin at the reduced SuO(2)(110) surface have been considered. The most exothermic channel corresponds to the adsorption of O-2 parallel to the surface and to the four-fold tin row, and it is believed to be associated with the formation of a peroxo O-2(2-) species. The chemisorption of O-2 on reduced SnO2(110) surface causes a significant depopulation of states along the band gap and it is shown to trap the electrons in the chemisorbed complex producing an electron-depleted space-charge layer in the inner surface region of the material in agreement with some experimental evidences. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Comparison of non-Ohmic accelerated ageing of the ZnO- and SnO2-based voltage dependent resistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Carbon-coated SnO2 nanobelts and nanoparticles by single catalytic step

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da corrosão de cadinhos de SnO2-ZnO, na fusão de vidros contendo metais pesados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanopore size growth and ultrafiltration performance of SnO2 ceramic membranes prepared by sol-gel route

Supported ceramic membranes have been produced by the sol-casting procedure from aqueous colloidal suspensions prepared by the sol-gel route. Coatings on a tubular alumina support have been successfully performed leading to crack free layers. Samples have been sintered at 400, 500 and 600 degreesC, and the effect of heating treatment on the nanostructure and on the ultrafiltration properties are analyzed. The characterization has been done by high resolution scanning electron microscopy, nitrogen adsorption-desorption isotherms, water permeation and cut-off determination using polyethylene glycol standard solutions. The micrographs have revealed that grains and pore size increase with the temperature, whereas their shape remains invariant. This results is in agreements with N-2 adsorption-desorption analyses, which have revealed that the mean pore size diameter increases from 4 to 10 nm as the sintering temperature increases from 400 to 600 degreesC, while the total porosity remains constant. Furthermore, the tortuosity, calculated from water permeability, is essentially invariant with the sintering temperatures. The membranes cut-off, determined with a retention rate equal to 95%, are 3500, 6500 and 9000 g . mol(-1) for 400, 500 and 600 degreesC, respectively, showing that the permeation properties of SnO2 ultrafiltration membranes can easily be controlled by sintering condition.

The effect of preparation method and Sb content on SnO2-CuO sintering

The sintering behavior of SnO2-CuO system has been investigated for two preparation methods and as a function of antimony concentration. A chemical preparation (Pechini's method) resulted in powders with smaller particle sizes than for a conventional oxide mixture. This led to smaller grain sizes in Pechini's method ceramics. The microstructures were heterogeneous in both systems, showing grain coarsening. The densification was aided by liquid phase formation, due to copper, in both systems, but the temperature of maximum shrinkage rate was larger for the Pechini's method ceramic because copper had to diffuse to the grain surface. Independently of the preparation method, antimony did not aid densification, and increasing its concentration led to a higher densification temperature and lower shrinkage rate. (C) 2003 Kluwer Academic Publishers.

Surface equilibrium angle for anisotropic grain growth in SnO2 systems

Usually, the kinetic models used in the study of sintered ceramic are performed by means of indirect physical tests, such as, results obtained from data of linear shrinkage and mass loss. This fact is justified by the difficulty in the determinations of intrinsic parameters of ceramic materials along every sintering process. In this way, the technique of atomic force microscopy (AFM) was used in order to determine the importance and the evolution of the dihedral angle in the sintering of 0.5 mol% MnO2-doped tin dioxide obtained by the polymeric precursor method.

SnO2 nanocrystals synthesized by microwave-assisted hydrothermal method: towards a relationship between structural and optical properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

Impedance spectroscopy analysis of SnO2 thick-films gas sensors

A careful analysis of the impedance response of SnO2 thick films under vacuum and air atmosphere is reported in the present work. The AC electrical resistance was analyzed and it was shown that it is highly frequency dependent. Different models and its equivalent circuit representation were proposed and carefully analyzed based on the microstructure features of the device. Basically, an interpretation of the frequency dependent resistance was proposed based on the fact that different grains characteristics and junctions exist. These different grains and junctions are the main source of resistance dependent feature. An equivalent circuit model, considering different grain sizes associated with different grain boundary junctions characteristics, was introduced so that a consistent interpretation of the results was possible.

SnO2 nanoparticles functionalized in amorphous silica and glass

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)