Vesicle-micelle transition in mixtures of dioctadecyldimethylammonium chloride and bromide with nonionic and zwitterionic surfactants

We have investigated the effect of mixing spontaneously formed dispersions of the cationic vesicle-forming dioctadecyldimethylammonium chloride and bromide (DODAX, with X being anions Cl- (C) or Br- (B)) with solutions of the micelle-forming nonionic ethylene oxide surfactants penta-, hepta-, and octaethyleneglycol mono-n-dodecyl ether, C12En (n = 5, 7, and 8), and the zwitterionic 3-(N-hexadecyl-N,N-dimethylammonio)propane sulfonate (HPS). We used for this purpose differential scanning calorimetry (DSC), turbidity, and steady-state fluorescence spectroscopy to investigate the vesicle-micelle (V-M) transition yielded by adding C12En and HPS to 1.0 mM vesicle dispersions of DODAC and DODAB. The addition of these surfactants lowers the gel-to-liquid crystalline phase transition temperature (T-m) of DODAC and DODAB, and the transition becomes less cooperative, that is, the thermogram transition peak shifts to lower temperature and broadens to disappear when the V-M transition is complete, the vesicle bilayer becomes less organized, and the T., decreases, in agreement with measurements of the fluorescence quantum yield of trans-diphenylpolyene (t-DPO) fluorescence molecules incorporated in the vesicle bilayer. Turbidity data indicate that the V-M transition comes about in three stages: first surfactants are solubilized into the vesicle bilayer; after saturation, the vesicles are ruptured, and, finally, the vesicles are completely solubilized and only mixed micelles are formed. The critical points of bilayer saturation and vesicle solubilization were obtained from the turbidity and fluorescence curves, and are reported in this communication. The solubility of DODAX is stronger for C12En than it is for HPS, meaning that C12En solubilizes DODAX more efficiently than does HPS. The surfactant solubilization depends slightly on the counterion, and varies according to the sequence C12E5 > C12E7 > C12E8 > HPS.

Two phase transitions in (s+id)-wave Bardeen-Cooper-Schrieffer superconductivity

We establish universal behaviour in the temperature dependencies of some observables in (s + id)-wave BCS superconductivity in the presence of a weak a wave. We find also a second second-order phase transition. As temperature is lowered-past the usual critical temperature T-c, a less ordered superconducting phase is created in the d wave, which changes to a more ordered phase in a (s + id) wave at T-c1 (phase transitions is manifested by the two jumps in the specific heat at T-c and T(c)1. The temperature dependencies of the susceptibility, penetration depth, and thermal conductivity also confirm the existence of the new phase transition.

Two phase transitions in (d(x2-y2)+is)-wave superconductors

We study numerically the temperature dependencies of specific heat, susceptibility, penetration depth, and thermal conductivity of a coupled (d(x2-y2) + is)-wave Bardeen-Cooper-Schrieffer (BCS) superconductor in the presence of a weak s-wave component (1) on square lattice and (2) on a lattice with orthorhombic distortion. As the temperature is lowered past the critical temperature T-c, a less ordered superconducting phase is created in d(x2-y2) wave, which changes to a more ordered phase in (d(x2-y2) + is) wave at T-c1. This manifests in two second-order phase transitions. The two phase transitions are identified by two jumps in specific heat at T-c and T-c1. The temperature dependencies of the superconducting observables exhibit a change from power-law to exponential behavior as temperature is lowered below T-c1 and confirm the new phase transition. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Critical temperature for first-order phase transitions in confined systems

We consider the Euclidean D-dimensional -lambda vertical bar phi vertical bar(4)+eta vertical bar rho vertical bar(6) (lambda,eta > 0) model with d (d <= D) compactified dimensions. Introducing temperature by means of the Ginzburg-Landau prescription in the mass term of the Hamiltonian, this model can be interpreted as describing a first-order phase transition for a system in a region of the D-dimensional space, limited by d pairs of parallel planes, orthogonal to the coordinates axis x(1), x(2),..., x(d). The planes in each pair are separated by distances L-1, L-2, ... , L-d. We obtain an expression for the transition temperature as a function of the size of the system, T-c({L-i}), i = 1, 2, ..., d. For D = 3 we particularize this formula, taking L-1 = L-2 = ... = L-d = L for the physically interesting cases d = 1 (a film), d = 2 (an infinitely long wire having a square cross-section), and for d = 3 (a cube). For completeness, the corresponding formulas for second-order transitions are also presented. Comparison with experimental data for superconducting films and wires shows qualitative agreement with our theoretical expressions.

Incorporating memory effects in phase separation processes

We consider the modification of the Cahn-Hilliard equation when a time delay process through a memory function is taken into account. We then study the process of spinodal decomposition in fast phase transitions associated with a conserved order parameter. Finite-time memory effects are seen to affect the dynamics of phase transition at short times and have the effect of delaying, in a significant way, the process of rapid growth of the order parameter that follows a quench into the spinodal region. These effects are important in several systems characterized by fast processes, like non-equilibrium dynamics in the early universe and in relativistic heavy-ion collisions. (C) 2006 Elsevier B.V. All rights reserved.

Numerical approximation of the Ginzburg-Landau equation with memory effects in the dynamics of phase transitions

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Non-local effects at the onset of the chiral transition

Inspired by analytic results obtained for a systematic expansion of the memory kernel in dissipative quantum mechanics, we propose a phenomenological procedure to incorporate non-markovian corrections to the Langevin dynamics of an order parameter in field theory systematically. In this note, we restrict our analysis to the onset of the evolution. As an example, we consider the process of phase conversion in the chiral transition.

Magnetic field induced lattice effects in a quasi-two-dimensional organic conductor close to the Mott metal-insulator transition

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Red Mud from Brazil: Thermal Behavior and Physical Properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A homovalent doping in PMN ceramics by using lithium and scandium cations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Determinação da temperatura de solubilização da prata em ligas de Cu-Al-Ag por medidas de resistência elétrica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Voltage-composition profile and synchrotron X-ray structural analysis of low and high temperature LixCoO2 host material

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phase formation and characterization of BaBi2Ta2O9 obtained by mixed oxide procedure

Ferroelectric layefed-perovskite BaBi2Ta2O9 (BBT) has been prepared successfully by solid-state reaction. The influence of pressure and temperature/time annealing regime on the BBT phase formation was analyzed. The powders were characterized by thermal analysis and Xray diffraction and the sintered pellets by scanning electron microscopy. The crystalline BBT phase, free of secondary phases was obtained at 950 degreesC for 2 h. For an applied field strength of 380 kV/cm, a remnant polarization of 7.6 muC/cm(2) and an electric coercive field of 45.7 kV/cm were obtained. (C) 2004 Elsevier B.V. All rights reserved.

Characterization of BaTi1-xZrxO3 thin films obtained by a soft chemical spin-coating technique

Single-phase perovskite structure BaZrxTi1-xO3 (BZT) (0.05less than or equal toxless than or equal to0.25) thin films were deposited on Pt-Ti-SiO2-Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZrxTi1-xO3 thin films, corroborate to the structural change caused by the zirconium doping. on the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan delta<0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively. (C) 2004 American Institute of Physics.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics

In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.