Estudo da fotocapacitância em dispositivos MIS orgânicos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Formação de filmes finos de Al2O3 por anodização e seu uso em dispositivos com filmes de Poli(3-Hexiltiofeno)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Materiais óxidos magnéticos nanoestruturados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dispositivos MIS à base de Ftalocianina e óxido de alumínio produzidos por impressão jato de tinta em substrato flexível

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Filmes nanoestruturados aplicados ao sistema de língua eletrônica: um estudo de interfaces

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo de mecanismos de transporte em nanofios de óxido de índio dopado com estanho

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Silicone insulators of power transmission lines with a variable inorganic load concentration: Electrical and physiochemical analyses

Polymeric insulation is an increasing tendency in projects and maintenance of electrical networks for power distribution and transmission. Electrical power devices (e. g., insulators and surge arresters) developed by using polymeric insulation presents many advantages compared to the prior power components using ceramic insulation, such as: a better performance under high pollution environment; high hydrophobicity; high resistance to mechanical, electrical and chemical stresses. The practice with silicone insulators in polluted environments has shown that the ideal performance is directly related to insulator design and polymer formulation. One of the most common misunderstandings in the design of silicone compounds for insulators is the amount of inorganic load used in their formulation. This paper attempts to clarify how the variation of the inorganic load amount affects physicochemical characteristics of different silicone compounds. The physicochemical evaluation is performed from several measurements, such as: density, hardness, elongation, tensile strength. In addition, the evaluation of the physicochemical structure is carried out using infrared test and scanning electronic microscopy (SEM). The electrical analysis is performed from the electric tracking wheel and erosion test, in agreement with the recommendation of the International Electrotechnical Commission (IEC). (C) 2014 Elsevier Ltd. All rights reserved.

O exemplo mais simples do uso do método das imagens

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigação da condução elétrica em fitas duplas de dna imobilizadas em eletrodos de ouro por medidas eletroquímicas

Pós-graduação em Química - IQ

Hybridization effects on the out-of-plane electron tunneling properties of monolayers: is h-BN more conductive than graphene?

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Anderson localization and momentum-space entanglement

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Probing the Mott physics in kappa-(BEDT-TTF)(2)X salts via thermal expansion

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films

Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.