Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics

In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.

Synthesis and electrical characterization of tungsten doped Pb(Zr0.53Ti0.47)O-3 ceramics obtained from a hybrid process

Pure and W-doped PZT ceramics (PZT and PZTW) were prepared by a hybrid process consisting in the association of polymeric precursor and partial oxalate methods. The phase formation was investigated by simultaneous thermal analysis (TG/DSC) and X-ray diffraction (XRD). The effect of W doping PZT and their electrical properties was evaluated. Substitution of W by Ti leads to an increase of Curie temperature and broadening of dielectric constant. A typical hysteresis loop was observed at room temperature and the remnant polarization was increased with the content of W. (c) 2007 Elsevier B.V. All rights reserved.

Model for electrodes' filaments of hot cathode fluorescent lamps, during preheating with constant rms current

This paper presents a new model for the representation of electrodes' filaments of hot-cathode fluorescent lamps, during preheating processes based on the injection of currents with constant root mean square (rms) values. The main improvement obtained with this model is the prediction of the R-h/R-c ratio during the preheating process, as a function of the preheating time and of the rms current injected in the electrodes. Using the proposed model, it is possible to obtain an estimate of the time interval and the current that should be provided by the electronic ballast, in order to ensure a suitable preheating process. is estimate of time and current can be used as input data in the design of electronic ballasts with programmed lamp start, permitting the prediction of the R-h/R-c ratio during the initial steps of the design (theoretical analysis and digital simulation). Therefore, the use of the proposed model permits to reduce the necessity of several empirical adjustments in the prototype, in order to set the operation of electronic ballasts during the preheating process. This fact reduces time and costs associated to the global design procedure of electronic ballasts.

The relationship between differential equations with piecewise constant argument and the associated discrete equations, via dichotomic maps

Dichotomic maps are considered by means of the stability and asymptotic stability of the null solution of a class of differential equations with argument [t] via associated discrete equations, where [.] designates the greatest integer function.

Viscoelastic behavior of persimmons dried at constant air temperature

The viscoelastic behavior of dried persimmons at different air-drying temperatures and velocities was evaluated. Air temperatures and velocities were varied according to a second-order central composite design, with temperature ranging from 40degreesC to 70degreesC and air velocity from 0.8 to 2.0 m/s. After drying, persimmons were equilibrated at four different water activities: 0.432, 0.576, 0.625 and 0.751. The rheological behavior of dried and conditioned persimmons was studied under uniaxial compression-relaxation tests. Three different rheological models were fitted to the experimental relaxation curves: Maxwell, Generalized Maxwell and Peleg and Normand. Based on the root mean square of residuals, the Generalized Maxwell model showed the best fit and a regression analysis was applied to obtain response surfaces for the model parameters. The dependence of the rheological properties on water activity was also analysed. Results showed that only the linear effect of air temperature was significant at a 5% level on the equilibrium stress and relaxation times. In a general way, these parameters increased with increasing air temperature and decreasing water activity. (C) 2004 Swiss Society of Food Science and Technology. Published by Elsevier Ltd. All rights reserved.

Role of oxygen vacancies in the magnetic and dielectric properties of the high-dielectric-constant system CaCu3Ti4O12: An electron-spin resonance study

We report experiments of electron spin resonance (ESR) of Cu2+ in polycrystalline samples of CaCu3Ti4O12 post-annealed in different atmospheres. After being synthesized by solid state reaction, pellets of CaCu3Ti4O12 were annealed for 24 h at 1000 degrees C under air, Ar or O-2. Our temperature dependent ESR data revealed for all samples nearly temperature independent g value (2.15(1)) and linewidth for T > T-N approximate to 25 K. However, the values of ESR linewidth are strongly affected by the oxygen content in the sample. For instance, argon post-annealed samples show a much larger linewidth than the O-2 or air post-annealed samples. We attribute this broadening to an increase of the dipolar homogeneous broadening of the Cu2+ ESR lines due to the presence of oxygen vacancies which induce an S=1/2 spin inside the TiO6 octahedra. Correlation between a systematic dependence of the ESR linewidth on the oxygen content and the high dielectric constant of these materials is addressed. Also, ESR, magnetic susceptibility, and specific heat data for a single crystal of CaCu3Ti4O12 and for polycrystals of CdCu3Ti4O12 are reported.

Preparation of Pb(Zr,Ti)O-3 thin films by soft chemical route

Lead zirconate titanate, Pb(Zr0.3Ti0.7)O-3 (PZT) thin films were prepared with success by the polymeric precursor method. Differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FT-IR), Micro-Raman spectroscopy and X-ray diffraction (XRD) were used to investigate the formation of the PZT perovskite phase. X-ray diffraction revealed that the film showed good crystallinity and no presence of secondary phases was identified. This indicates that the PZT thin films were crystallized in a single phase. PZT thin films showed a well-developed dense grain structure with uniform distribution, without the presence of rosette structure. The Raman spectra undoubtedly revealed these thin films in the tetragonal phase. For the thin films annealed at the 500-700 degreesC range, the vibration modes of the oxygen sublattice of the PZT perovskite phase were confirmed by FT-IR. The room temperature dielectric constant and dielectric loss of the PZT films, measured at 1 kHz were 646 and 0.090, respectively, for thin film with 365 nm thickness annealed at 700 degreesC for 2 h. A typical P-E hysteresis loop was observed and the measured values of P-s, P-r and E-c were 68 muC/cm(2), 44 muC/cm(2) and 123 kV/cm, respectively. The leakage current density was about 4.8 x 10(-7) A/cm(2) at 1.5 V. (C) 2003 Elsevier Ltd. All rights reserved.

Fatigue crack growth of Al 7475 T761 under constant and variable amplitude loading

Experimental programs in constant and variable amplitude loading were performed to obtain a x N curves and to study retardation in fatigue crack growth due to overloads. The main aim of this research program was to analyse the effect of overload ratio and number of overload peaks. The effect of underloads, before and after the overload blocks was also studied. The generalised equation of Paris-Erdogan type was used for modelling of obtained data on crack propagation under constant amplitude load.

The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.

Stepping-motor-driven constant-shear-rate rotating viscometer

Despite the frequent use of stepping motors in robotics, automation, and a variety of precision instruments, they can hardly be found in rotational viscometers. This paper proposes the use of a stepping motor to drive a conventional constant-shear-rate laboratory rotational viscometer to avoid the use of velocity sensor and gearbox and, thus, simplify the instrument design. To investigate this driving technique, a commercial rotating viscometer has been adapted to be driven by a bipolar stepping motor, which is controlled via a personal computer. Special circuitry has been added to microstep the stepping motor at selectable step sizes and to condition the torque signal. Tests have been carried out using the prototype to produce flow curves for two standard Newtonian fluids (920 and 12 560 mPa (.) s, both at 25 degrees C). The flow curves have been obtained by employing several distinct microstep sizes within the shear rate range of 50-500 s(-1). The results indicate the feasibility of the proposed driving technique.

Jacalin interaction with human immunoglobulin A1 and bovine immunoglobulin G1: Affinity constant determined by piezoelectric biosensoring

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

DNA hybridization mechanism in an interfacial environment: What hides beneath first order k (s(-1)) kinetic constant?

The scientific question addressed in this work is: what hides beneath first order kinetic constant k (s(-1)) measured for hybridization of a DNA target on a biosensor surface. Kinetics hybridization curves were established with a 27 MHz quartz microbalance (9 MHz, third harmonic) biosensor, constituted of a 20-base probe monolayer deposited on a gold covered quartz surface. Kinetics analysis, by a known two-step adsorption-hybridization mechanism, is well appropriate to fit properly hybridization kinetics curves, for complementary 20-base to 40-base targets over two concentration decades. It was found that the K-1 (M-1) adsorption constant, relevant to the first step, concerns an equilibrium between non hybridized targets and hybridized pre-complex and increases with DNA target length. It was established that k(2) (s(-1)), relevant to irreversible formation of a stable duplex, varies in an opposite way to K-1 with DNA target length. (C) 2012 Published by Elsevier B.V.

Investigation of Ferroelectric Layered Perovskite Barium Bismuth Tantalate Prepared by Solid-State Reaction

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Analysis and design of constant-frequency peak-current-controlled high-power-factor boost rectifier with slope compensation

This paper presents the analysis and the design of a peak-current-controlled high-power-factor boost rectifier, with slope compensation, operating at constant frequency. The input current shaping is achieved, with continuous inductor current mode, with no multiplier to generate a current reference. The resulting overall circuitry is very simple, in comparison with the average-current-controlled boost rectifier. Experimental results are presented, taken from a laboratory prototype rated at 370 W and operating at 67 kHz. The measured power factor was 0.99, with a input current THD equal to 5.6%, for an input voltage THD equal to 2.26%.