Efficient Dye-Sensitized Solar Cells Based on the Combination of ZnO Nanorods and Microflowers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.

Microwave Hydrothermal Synthesis and Photocatalytic Performance of ZnO and M:ZnO Nanostructures (M = V, Fe, Co)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.

Raman scattering study of zincblende InxGa1-xN alloys

We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.

Effect of in concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450°C

Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450°C on glass substrates from solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. © 2000 Elsevier Science B.V. All rights reserved.

Search for new physics in events with same-sign dileptons and b-tagged jets in pp collisions at √ s = 7TeV

A search for new physics is performed using isolated same-sign dileptons with at least two b-quark jets in the final state. Results are based on a 4.98 fb -1 sample of protonproton collisions at a centre-of-mass energy of 7TeV collected by the CMS detector. No excess above the standard model background is observed. Upper limits at 95% confidence level are set on the number of events from non-standard-model sources. These limits are used to set constraints on a number of new physics models. Information on acceptance and efficiencies are also provided so that the results can be used to confront additional models in an approximate way. © 2012 SISSA.

Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Studies of jet mass in dijet and W/Z + jet events

Invariant mass spectra for jets reconstructed using the anti-k T and CambridgeAachen algorithms are studied for different jet grooming techniques in data corresponding to an integrated luminosity of 5 fb-1, recorded with the CMS detector in proton-proton collisions at the LHC at a center-of-mass energy of 7 TeV. Leading-order QCD predictions for inclusive dijet and W/Z+jet production combined with parton-shower Monte Carlo models are found to agree overall with the data, and the agreement improves with the implementation of jet grooming methods used to distinguish merged jets of large transverse momentum from softer QCD gluon radiation. © 2013 CERN for the benefit of the CMS collaboration.

Microwave hydrothermal synthesis, characterisation, and catalytic performance of Zn1-xMnxO in cellulose conversion

Wurtzite-type Zn1-xMnxO (x = 0, 0.03, 0.05, 0.07) nanostructures were successfully synthesised using a simple microwave-assisted hydrothermal route and their catalytic properties were investigated in the cellulose conversion. The morphology of the nanocatalysts is dopant-dependent. Pure ZnO presented multi-plate morphology with a flower-like shape of nanometric sizes, while the Zn0.97Mn0.03O sample is formed by nanoplates with the presence of spherical nanoparticles; the Zn0.95Mn0.05O and Zn0.93Mn0.07O samples are mainly formed by nanorods with the presence of a small quantity of spherical nanoparticles. The catalyst without Mn did not show any catalytic activity in the cellulose conversion. The Mn doping promoted an increase in the density of weak acid sites which, according to the catalytic results, favoured promotion of the reaction. © 2013 Institute of Chemistry, Slovak Academy of Sciences.

Caracterização de filmes finos de ZnO dopados com Al e Mn depositados em substrato vítreo pelo método de Spray Pirólise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Tradução comentada das Aguafuertes Gallegas (1935), de Roberto Arlt

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Associação do filtro orgânico butil metoxi dibenzoil metano com o sistema óxido de zinco: óxido de titâmio (IV) para aplicação em protetores solares

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Síntese e caracterização de filmes finos de óxido de zinco

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Cálculo e análise de efeitos de campo magnético nos estados eletrônicos de impurezas rasas em materiais semicondutores

Pós-graduação em Ciência e Tecnologia de Materiais - FC