Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.

A Raman and dielectric study of a diffuse phase transition in (Pb1-xCax)TiO3 thin films

Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca2+ content. on the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE-PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films.

Dielectric properties and microstructure of SrTiO3/BaTiO3 multilayer thin films prepared by a chemical route

Multilayer thin films with perovskite structures were produced by the polymeric precursor method. SrTiO3/BaTiO3 (STO/BTO) multilayers were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by the spin-coating technique and heated in air at 700 degreesC. The microstructure and crystalline phase of the multilayered thin films were examined by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), resolution-high transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and X-ray diffraction. The SrTiO3/BaTiO3 multilayer thin films consisted of grainy structures with an approximate grain size of 60 nm. The multilayered thin films showed a very clear interface between the components. The SrTiO3/BaTiO3 multilayer thin films revealed dielectric constants of approximately 527 and loss tangents of 0.03 at 100 kHz. The dielectric constant calculated for this multilayer film system is the value of the sum of each individual component of the film, i.e. The total value of the sum of each SrTiO3 (STO) and BaTiO3 (BTO) layer. The multilayer SrTiO3/BaTiO3 obtained by the polymeric precursor method, also showed a ferroelectric behavior with a remanent polarization of 2.5 muC/cm(2) and a coercive field of 30 kV/cm. The multilayer films displayed good fatigue characteristics under bipolar stressing after application of 10(10) switching cycles. (C) 2001 Published by Elsevier B.V. B.V. All rights reserved.

Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural refinement, optical and microwave dielectric properties of BaZrO3

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method

Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.

Relationship between the dielectric and mechanical properties and the ratio of epoxy resin to hardener of the hybrid thermosetting polymers

The relationship between the dielectric properties (dielectric constant, ε′, and loss factor, ε; activation energy, E a) and the ratio of epoxy resin (OG) to hardener of the epoxy resin thermosetting polymers was investigated. The amplitude of the ε″ peak decreases with increasing OG content until about 73 wt.% and slightly increases at higher OG content. The temperature of the position of the ε″ peak increases with the increasing of OG content, reaching maximum values for compositions in the range of 67 and 73 wt.%, and then it decreases sharply at higher OG content. The activation energy obtained from dielectric relaxation increased with increasing wt.% OG up to around 70 wt.%. Further increase in concentration of OG up to 83 wt.% reduced E a. The curves of tensile modulus and fracture toughness mechanical properties as a function of OG content presented a similar behavior. ©2006 Sociedade Brasileira de Química.

Microstructure, crystalline phase, and dielectric property analyses of TiO2 composition with ZrO2 addition

For microwave applications, including mobile and satellite communications, ceramic resonators should have a high dielectric constant, low dielectric losses, and high frequency stability. In this sense, TiO2-ZrO 2 ceramics have been investigated as a function of sintering behavior, phase composition, and microstructure. The ceramics were densified reaching a value of about 86% of theoretical density at 1400°C sintering temperature. The ceramics are prepared by mixing raw materials with the following TiO2-ZrO2 weight % ratio: 100 to 0, 90 to 10, and 80 to 20, respectively. The measured dielectric constants are between 79 and 88 values, while the quality factor due to dielectric losses are between 2820 and 5170. These results point out the influence of Ti/Zr ratio on controlling the dielectric properties. © (2010) Trans Tech Publications.

Dielectric behavior of epoxy/BaTiO3 composites using nanostructured ceramic fibers obtained by electrospinning

Composite materials made of epoxy resin and barium titanate (BT) electrospun nanostructured fibers were prepared. BT fibers were synthesized from a sol based on barium acetate, titanium isopropoxide, and poly(vinyl pyrrolidone). The fibers were heat-treated at different temperatures and characterized by X-ray diffraction, scanning electron microscopy (SEM), and Raman spectroscopy. Mats of BT fibers heat-treated at 800 C were embedded in epoxy resin into suitable molds. The composites were characterized by SEM, and dielectric measurements were performed by means of dielectric spectroscopy. The dielectric permittivity and dielectric modulus of epoxy resin/BT-fiber composites were measured for two types of samples: with the electrodes parallel and perpendicular to the BT fiber layers. Interestingly, composite samples with electrodes perpendicular to the fiber layers and a BT content as low as 2 vol % led to dielectric permittivities three times higher than that of pure epoxy resin. © 2013 American Chemical Society.

Caracterização dielétrica de partículas nanométricas e nanoestruturadas de óxido de niobato da família tetragonal tungstênio bronze com estequiometria K'Sr IND. 2' N'b IND. 5' 'O IND. 15'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de cerâmicas texturizadas de titanato de bismuto puro e dopado com nióbio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigation of the structural, optical and dielectric properties of highly (100)-oriented (Pb0.60Ca0.20Sr0.20)TiO3 thin films on LaNiO3 bottom electrode

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric properties of Sr0.75Ba0.25Nb 2O6 thin films: Bias field, frequency and temperature dependence

Ferroelectric strontium barium niobate solid solutions had received great attention due to their excellent pyroelectric, electrooptic and photorefractive properties. Furthermore, they usually also present very interesting phase transition characteristics. In this work, polycrystalline single phase Sr 0.75 Ba 0.25 Nb 2 O 6 thin films were prepared by a hybrid chemical method and deposited on Pt/Ti/SiO 2 /Si substrates. The temperature dependence of dielectric constant was measured at different frequencies and bias field levels. The presence of two dielectric dispersion regions with relaxor characteristics was observed at distinct temperature ranges, corresponding to the ferro-paraelectric and to a structural phase transition at low temperatures, respectively. A specific dielectric dispersion region, associated with an incommensurate superstructure frequently observed in bulk samples, was not observed in this films probably due to their small grain sizes. © 2002 Taylor & Francis.

Physical Vapor Deposited Thin Films of Lignins Extracted from Sugar Cane Bagasse: Morphology, Electrical Properties, and Sensing Applications

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)