Microstructure and electrical properties of (Ta, Co, Pr) doped TiO2 based electroceramics

The addition of different dopants affects the densification, mean grain size and electrical properties of TiO2-based varistor ceramics. This paper discusses the microstructural and electrical properties of (Ta, Co, Pr) doped TiO2 systems, demonstrating that some of these systems display electrical properties that allow for their use as low voltage varistor. Dopants such as Ta2O5 play a special role in the formation of barriers at the grain boundary and in the nonlinear behavior in TiO2-based systems. The higher values of nonlinear coefficient and breakdown electric field were obtained in the system just doped with Ta2O5 and CoO.

Resistance inducing agents on the biology and probing behaviour of the greenbug in wheat

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors

The SnO2 based varistor systems recently presented in the literature appear to have a promising potential in commercial applications. Experimental evidence shows that there is a dependence of nonlinear constant values with thermal treatment under different atmospheres. Thermal treatments in oxygen and nitrogen rich atmospheres at 900 degreesC prove this dependence, indicating that the nonlinear constant values are significantly lower when the material is submitted to a nitrogen atmosphere. Moreover, electrical properties can be restored when the varistor is subjected to thermal treatment at the same temperature in an oxygen atmosphere, indicating that the mechanism seems to be reversible. This paper discusses this behavior focusing in the grain boundary region. Ta2O5 mol% concentrations are also analyzed and the results indicate an optimum Ta2O5 concentration of 0.05 mol% for the electrical properties (alpha = 44 and E-B = 6150 V cm(-1)). (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Nonlinear properties and stability of SnO2 varistors prepared by evaporation and decomposition of suspensions

SnO2 varistors doped with CoO, Cr2O3 and Nb2O5 were prepared by evaporation and decomposition of suspensions. The composition of the varistors was optimized to improve electrical properties, such as nonlinearity, leakage current and electrical stability. The best results were achieved with the following composition: 99.15% SnO2 +0.75% CoO+0.05% Cr2O3 +0.05% Nb2O5. Samples showed high density, reaching 99.5% of the theoretical density, as well as an homogeneous microstructure. The nonlinear coefficient was higher than 30 in the current range from 10(-7) to 10(-2) A/cm(2). The leakage current was 0.86 mu A/cm(2). These samples showed high stability of electrical parameters when they were exposed to high current of 27 mA/cm(2) for different time periods up to 30 min. (c) 2005 Elsevier Ltd. All rights reserved.

Designing a modified Hopfield network to solve an Economic Dispatch problem with nonlinear cost function

Economic Dispatch (ED) problems have recently been solved by artificial neural networks approaches. In most of these dispatch models, the cost function must be linear or quadratic. Therefore, functions that have several minimum points represent a problem to the simulation since these approaches have not accepted nonlinear cost function. Another drawback pointed out in the literature is that some of these neural approaches fail to converge efficiently towards feasible equilibrium points. This paper discusses the application of a modified Hopfield architecture for solving ED problems defined by nonlinear cost function. The internal parameters of the neural network adopted here are computed using the valid-subspace technique, which guarantees convergence to equilibrium points that represent a solution for the ED problem. Simulation results and a comparative analysis involving a 3-bus test system are presented to illustrate efficiency of the proposed approach.

Nonlinear optimization using a modified Hopfield model

Systems based on artificial neural networks have high computational rates due to the use of a massive number of simple processing elements. Neural networks with feedback connections provide a computing model capable of solving a rich class of optimization problems. In this paper, a modified Hopfield network is developed for solving constrained nonlinear optimization problems. The internal parameters of the network are obtained using the valid-subspace technique. Simulated examples are presented as an illustration of the proposed approach.

INTEGRATION OF THE NONLINEAR POISSON BOLTZMANN-EQUATION FOR CHARGED VESICLES IN ELECTROLYTIC SOLUTIONS

The Poisson-Boltzmann equation (PBE), with specific ion-surface interactions and a cell model, was used to calculate the electrostatic properties of aqueous solutions containing vesicles of ionic amphiphiles. Vesicles are assumed to be water- and ion-permeable hollow spheres and specific ion adsorption at the surfaces was calculated using a Volmer isotherm. We solved the PBE numerically for a range of amphiphile and salt concentrations (up to 0.1 M) and calculated co-ion and counterion distributions in the inside and outside of vesicles as well as the fields and electrical potentials. The calculations yield results that are consistent with measured values for vesicles of synthetic amphiphiles.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.

Relation between ambient humidity and ionic conductivity of poly(thionaphtheneindole): Behaviour as an amperometric humidity sensor

The electrical characteristics of oxidized poly(thionaphtheneindole) were investigated as a function of ambient relative humidity (r.h.). The current flowing through a pressed pellet of material between two massive gold electrodes plotted against voltage gives a wave-shaped curve with a halfwave potential at V = similar to 3 V. The current recorded at 4 V (plateau of the wave) is a sigmoidal function of r.h, with the inflexion point at similar to 60%. An interpretation of these findings is given, based on the influence of water on the dielectric constant of the material and on acid-base equilibrium between poly(thionaphtheneindole) and water, from which protons are produced. The behaviour of poly (thionaphtheneindole) as the active component of an amperometric humidity sensor is also reported.

Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors

ZnO has the characteristic of presenting an intermediate value for the effective 3 eV barrier at room temperature. ZnO ceramics are applied in high-voltage systems or circuits. Attempts were made to reduce the number of effective barriers in the system by adding large particles of ZnO to the varistor composition. This procedure reduced the breakdown field of the varistors by values up to 90% lower than those initially obtained, and produced nonlinear coefficients as low as 20. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.

ANISOTROPY OF ELECTRICAL-PROPERTIES IN ALPHA-FE2O3 CERAMICS

Electrical conductivity and thermoelectric power measurements carried out in a heamatite ceramic showed a strong anisotropy in directions normal and parallel to the uniaxial pressing direction. This behaviour is similar to that verified in alpha-Fe2O3 single crystal. The results suggest that the extended structural defects, generated during sintering, disturb the magnetic order on the (001) planes of alpha-Fe2O3 and limit the mobility of n type carriers.

Nonlinear behavior of TiO2 center dot Ta2O5 center dot MnO2 material doped with BaO and Bi2O3

A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Transmission-expansion planning using the DC model and nonlinear-programming technique

The paper presents a constructive heuristic algorithm (CHA) for solving directly the long-term transmission-network-expansion-planning (LTTNEP) problem using the DC model. The LTTNEP is a very complex mixed-integer nonlinear-programming problem and presents a combinatorial growth in the search space. The CHA is used to find a solution for the LTTNEP problem of good quality. A sensitivity index is used in each step of the CHA to add circuits to the system. This sensitivity index is obtained by solving the relaxed problem of LTTNEP, i.e. considering the number of circuits to be added as a continuous variable. The relaxed problem is a large and complex nonlinear-programming problem and was solved through the interior-point method (IPM). Tests were performed using Garver's system, the modified IEEE 24-Bus system and the Southern Brazilian reduced system. The results presented show the good performance of IPM inside the CHA.