Tin-doped indium oxide nanobelts grown by carbothermal reduction method

This communication discusses the formation of doped nanobelts produced by a simple route. Tin-doped indium oxide (ITO) nanobelts were obtained by a carbothermal reduction method. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX) and wavelength-dispersive X-ray spectroscopy (WDX). The results show that the nanobelts have a cubic structure, are single crystalline and doped with tin and grow in the [400] direction.

Effect of processing conditions on the nucleation and growth of indium-tin-oxide nanowires made by pulsed laser ablation

Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 degrees C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor-liquid-solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/mu m(2). After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the [100] direction. These structures have potential applications in electrical and optical nanoscale devices.

Indium hydroxide nanocubes and microcubes obtained by microwave-assisted hydrothermal method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

EXAFS and Raman spectroscopy study of binary indium fluoride glasses

Extended X-ray absorption fine spectroscopy (EXAFS) and Raman scattering studies of InF3-BaF2 and InF3-SrF2 binary glasses are reported. For all compositions, the local structure of the glasses is built with InF6 units. For all glasses studied, the indium neighbour's number and the In-F mean bond length are equal to the values of the InF3 crystalline phase (6 and 0.205 nm, respectively). © 1996 Chapman & Hall.

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

Crystallization of amorphous GaAs films prepared onto different substrates

This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.

Ferromagnetic nanoclusters formed by Mn implantation in GaAs

Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40 °C, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications. © 2005 American Institute of Physics.

On the nucleation of GaP/GaAs and the effect of buried stress fields

We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.

Comparative study on turning CI and CGI using silicon nitride cutting tools

There has been a great interest for improving the machining of cast iron materials in the automotive and other industries. Comparative studies for tool used to machine grey cast iron (CI) and compacted graphite iron (CGI) on dry machining were also performed in order to find out why in this case the tool lifetime is not significantly higher. However the machining these materials while considering turning with the traditional high-speed steel and carbide cutting tools present any disadvantages. One of these disadvantages is that all the traditional machining processes involve the cooling fluid to remove the heat generated on workpiece due to friction during cutting. This paper present a new generation of ceramic cutting tool exhibiting improved properties and important advances in machining CI and CGI. The tool performance was analyzed in function of flank wear, temperature and roughness, while can be observed that main effects were found for tool wear, were abrasion to CI and inter-diffusion of constituting elements between tool and CGI, causing crater. However the difference in tool lifetime can be explained by the formation of a MnS layer on the tool surface in the case of grey CI. This layer is missing in the case of CGI.

Properties advanced of the silicon nitride based ceramics and recent performance on automotive parts manufacture by machining process: Advanced Ceramics, demand Forecast

Automotive parts manufacture by machining process using silicon nitride-based ceramic tool development in Brazil already is a reality. Si 3N4-based ceramic cutting tools offer a high productivity due to their excellent hot hardness, which allows high cutting speeds. Under such conditions the cutting tool must be resistant to a combination of mechanical, thermal and chemical attacks. Silicon nitride based ceramic materials constitute a mature technology with a very broad base of current and potential applications. The best opportunities for Si3N 4-based ceramics include ballistic armor, composite automotive brakes, diesel particulate filters, joint replacement products and others. The goal of this work was to show latter advance in silicon nitride manufacture and its recent evolution on machining process of gray cast iron, compacted graphite iron and Ti-6Al-4V. Materials characterization and machining tests were analyzed by X-Ray Diffraction, Scanning Electron Microscopy, Vickers hardness and toughness fracture and technical norm. In recent works the authors has been proved to advance in microstructural, mechanical and physic properties control. These facts prove that silicon nitride-based ceramic has enough resistance to withstand the impacts inherent to the machining of gray cast iron (CI), compacted graphite iron (CGI) and Ti-6Al-4V (6-4). Copyright © 2008 SAE International.

Treatment of experimental periodontitis in rats using repeated adjunctive antimicrobial photodynamic therapy

The aim of this study was to histologically and histometrically evaluate the influence of repeated adjunctive antimicrobial photodynamic therapy (aPDT) on bone loss (BL) in furcation areas in rats. Periodontitis was induced by placing a ligature around the mandibular molar in 75 rats. The animals were divided into five groups: the SS group was treated with saline solution (SS); the SRP group received scaling and root planing (SRP); the aPDT1 group received SRP as well as toluidine blue (TBO) and low-level laser therapy (LLLT; InGaAlP, 660 nm; 4.94 J/cm2/point) postoperatively at 0 h; the aPDT2 group received SRP as well as TBO and LLLT postoperatively at 0, 24, 28, and 72 h; and the aPDT3 group received SRP, TBO, and LLLT postoperatively at 0, 48, 96, and 144 h. The area of BL in the furcation region of the molar was histometrically analyzed. Data were analyzed statistically (P < 0.05). Animals treated with a single episode of aPDT showed less BL at days 7 and 30 than those who received only SRP treatment. No significant differences were found among the aPDT groups (P > 0.05). Repeated aPDT did not improve BL reduction when compared to a single episode of aPDT. © 2012 Springer-Verlag London Ltd.

Biomechanical effect of one session of low-level laser on the bone-titanium implant interface

Low-level laser (LLL) has been used on peri-implant tissues for accelerating bone formation. However, the effect of one session of LLL in the strength of bone-implant interface during early healing process remains unclear. The present study aims to evaluate the removal torque of titanium implants irradiated with LLL during surgical preparation of implant bed, in comparison to non-irradiation. Sixty-four Wistar rats were used. Half of the animals were included in LLL group, while the other half remained as control. All animals had the tibia prepared with a 2 mm drill, and a titanium implant (2.2 × 4 mm) was inserted. Animals from LLL group were irradiated with laser (gallium aluminum arsenide), with a wavelength of 808 nm, a measured power output of 50 mW, to emit radiation in collimated beams (0.4 cm2), for 1 min and 23 s, and an energy density of 11 J/cm2. Two applications (22 J/cm 2) were performed immediately after bed preparation for implant installation. Flaps were sutured, and animals from both groups were sacrificed 7, 15, 30, and 45 days after implant installation, when load necessary for removing implant from bone was evaluated by using a torquimeter. In both groups, torque values tended to increase overtime; and at 30 and 45 days periods, values were statistically higher for LLL group in comparison to control (ANOVA test, p < 0.0001). Thus, it could be suggested that a single session of irradiation with LLL was beneficial to improve bone-implant interface strength, contributing to the osseointegration process. © 2012 Springer-Verlag London Ltd.

Controlled route to the fabrication of carbon and boron nitride nanoscrolls: A molecular dynamics investigation

Carbon nanoscrolls (graphene layers rolled up into papyrus-like tubular structures) are nanostructures with unique and interesting characteristics that could be exploited to build several new nanodevices. However, an efficient and controlled synthesis of these structures was not achieved yet, making its large scale production a challenge to materials scientists. Also, the formation process and detailed mechanisms that occur during its synthesis are not completely known. In this work, using fully atomistic molecular dynamics simulations, we discuss a possible route to nanoscrolls made from graphene layers deposited over silicon oxide substrates containing chambers/pits. The scrolling mechanism is triggered by carbon nanotubes deposited on the layers. The process is completely general and can be used to produce scrolls from other lamellar materials, like boron nitride, for instance. © 2013 American Institute of Physics.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Low-level laser therapy in pediatric bell's palsy: Case report in a three-year-old child

Objectives: The objective of this study was to apply low-level laser therapy (LLLT) to accelerate the recovery process of a child patient with Bell's palsy (BP). Design: This was a prospective study. Subject: The subject was a three-year-old boy with a sudden onset of facial asymmetry due to an unknown cause. Materials and methods: The low-level laser source used was a gallium aluminum arsenide semiconductor diode laser device (660 nm and 780 nm). No steroids or other medications were given to the child. The laser beam with a 0.04-cm2 spot area, and an aperture with approximately 1-mm diameter, was applied in a continuous emission mode in direct contact with the facial area. The duration of a laser session was between 15 and 30 minutes, depending on the chosen points and the area being treated. Light was applied 10 seconds per point on a maximum number of 80 points, when the entire affected (right) side of the face was irradiated, based on the small laser beam spot size. According to the acupuncture literature, this treatment could also be carried out using 10-20 Chinese acupuncture points, located unilaterally on the face. In this case study, more points were used because the entire affected side of the face (a large area) was irradiated instead of using acupuncture points. Outcome measures: The House-Brackmann grading system was used to monitor the evolution of facial nerve motor function. Photographs were taken after every session, always using the same camera and the same magnitude. The three-year-old boy recovered completely from BP after 11 sessions of LLLT. There were 4 sessions a week for the first 2 weeks, and the total treatment time was 3 weeks. Results: The result of this study was the improvement of facial movement and facial symmetry, with complete reestablishment to normality. Conclusions: LLLT may be an alternative to speed up facial normality in pediatric BP. © Copyright 2013, Mary Ann Liebert, Inc. 2013.