Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

MnO2 influence on the electrical properties of SnO2-based ceramic systems

Tin dioxide is an n-type semiconductor that when doped with other metallic oxides exhibits non-linear electric behavior with high non-linear coefficient values typical of a varistor. In this work, electrical properties of the SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 ceramics systems were studied with the objective of analyzing the influence of MnO2 on sintering behavior and electrical properties of these systems. The compacts were prepared by powder mixture process and sintered at 1300°C for 1 hour, in air, using a constant heating rate of 10°C/min. The morphological and structural properties were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The densities of the sintered ceramics were measured using the Archimedes method. The SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 systems presented breakdown fields (Eb) about 3100 V.cm-1 and 3800 V.cm-1, respectively, and non-linear coefficient (α) about 10 and 20, respectively.

Crystallization of amorphous GaAs films prepared onto different substrates

This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.

Urbach energy parameter of flash evaporated amorphous gallium arsenide films

The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from photothermal deflection spectroscopy (PDS), presents large correlated variations with crucible temperature. The optical and electrical results are consistent with the As under coordinated sites being the more important defect in the material. © 2002 Elsevier Science B.V. All rights reserved.

Blue upconversion enhancement by a factor of 200 in Tm 3+-doped tellurite glass by codoping with Nd 3+ ions

We investigated near-infrared-to-blue upconversion from thulium (Tm 3+) doped in tellurite glasses upon continuous wave excitation near 800 nm. We observed an enhancement of over two orders of magnitude of the upconverted emission at ∼480nm when neodymium (Nd 3+) ions were codoped with Tm 3+ ions. For comparison, using a Tm 3+:Nd 3+ codoped fluorozirconate glass as a reference material we observed a 40-fold enhancement of the blue emission. Analysis of the blue emission for samples with different doping levels of Nd 3+ ions showed that energy transfer between Nd 3+ and Tm 3+ is the mechanism responsible for the enhancement in upconversion. © 2002 American Institute of Physics. © 2002 American Institute of Physics.

Enhanced frequency upconversion in Er3+ doped fluoroindate glass due to energy transfer from Tm3+

Energy transfer processes between Er3+ and Tm3+ were investigated examining the frequency upconversion emissions in a fluoroindate glass pumped at 790 nm. A 60-fold enhancement in the emission at ≈670 nm originating from Er3+ was observed when Tm3+ at concentration of 2% was introduced in a sample containing 2% of Er3+. The results are explained considering the influence of cross-relaxation processes between the active ions. © 2002 Elsevier Science B.V. All rights reserved.

Microstructure of doped barium titanate prepared from polymeric precursors

Barium titanate is used extensively as a dielectric in ceramic capacitors, particularly due to its high dielectric constant and low dielectric loss characteristics. It can be made semiconducting by addition of certain dopants and by proper modification of grains and grain boundary properties obtaining very interesting characteristics for various applications. The synthesis method and sintering regime have a strong influence on properties of obtained barium titanate ceramics. Doped barium titanate was prepared with Nb+5 and Y+3 ions as donor dopants, and with Mn+2 ions as acceptor dopant by polymeric precursors method. By this procedure nanosized powders were obtained after calcination. Sintering was performed in the temperature range of 1290°C to 1380°C The microstructure of doped BaTiO3 was performed using scanning electron microscopy. The influence of dopants and sintering temperature on grain size was analysed.

Red, green, and blue upconversion luminescence in ytterbium-sensitized praseodymium-doped lead-cadmium-germanate glass

Blue, green, red, and near-infrared upconversion luminescence in the wavelength region of 480 - 740 nm in Pr3+/Yb3+-codoped lead-cadmium-germanate glass under 980 nm diode laser excitation, is presented. Upconversion emission peaks around 485, 530, 610, 645, and 725 nm which were ascribed to the 3P0 - 3HJ (J=4, 5, and 6), and 3P0 - 3FJ (J=2, and 3,4), transitions, respectively, were observed. The population of the praseodymium upper 3P0 emitting level was accomplished through a combination of ground-state absorption of Yb3+ ions at the 2F7/2, energy-transfer Yb3+(2F 5/2) Pr3+(3H4), and excited-state absorption of Pr3+ ions provoking the 1G4 - 3P0 transition. The dependence of the upconversion luminescence upon the Yb3+-concentration and diode laser power, is also examined, in order to subsidize the proposed upconversion excitation mechanism.

Dynamics of energy transfer and frequency upconversion in Tm3+ doped fluoroindate glass

The spectroscopic properties of Tm3+-doped fluoroindate glasses (FIG) were described by single wavelength pumping in the red region. The Judd-Ofelt (J-O) theory was used to obtain the quantum efficiency of the 4f-4f transitions and other spectroscopic parameters. The dynamics of the fluorescence was investigated and energy transfer (ET) processes among Tm3+ ions were studied. The results indicate that a two-step one-photon absorption process is responsible for the ultraviolet upconversion (UC) emissions, and dipole-dipole interaction provides the main contribution for ET rate is equal to the decay rate of noninteracting among active ions.

Ferromagnetic nanoclusters formed by Mn implantation in GaAs

Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40 °C, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications. © 2005 American Institute of Physics.

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Mechanism of the formation and properties of antimony polyphosphate

Formation of antimony polyphosphate using Sb2O3 and/or (NH4)2HPO4 and NH4H 2PO4 as starting materials has been simulated by thermal analysis technique. The elimination of water and ammonia molecules induced by heating leads to the formation of intermediate ammonium polyphosphate, which subsequently reacts with Sb2O3. Morphologically, vitreous Sb(PO3)3 is composed of plaques having irregular shapes. Infrared spectra and NMR study is consistent with tetrametaphosphate anion arrangement. The compound is thermally unstable and may be recommended as a donor of -O-P-O- linkers in the preparation of special phosphate glasses. © 2005 Akadémiai Kiadó, Budapest.

Densification of Mn-doped tin oxide films by conventional heating and microwave heating treatment

Mn(II) doped SnO2 thin films used for shielding fluoride glasses against corrosion were investigated by x-ray absorption spectroscopy (EXAFS and XANE)S at the Sn and Mn K-edges. The effect of firing treatment on the densification of the films was studied. It has been evidenced a partial change of Mn valence from 2.3 to 2.6 upon heating which is attributed to a change of ratios of two Mn sites: grafted divalent Mn ions at the surface of SnO 2 nanocrystallites and trivalent Mn ions embedded into a substitutional solid solution with Sn. © Physica Scripta 2005.

Anelastic spectroscopy in TiO2

Titanium dioxide (rutile) has a lot of interesting and useful features and hence is widely utilized for application. It has been used as white pigment, photocatalyst, biocompatible material and semiconductor material used in solar battery. In semiconducting TiO2 oxygen vacancies are said to play an important role in the electrical conduction. Measurements of the elastic energy loss and modulus (anelastic spectroscopy) as a function of temperature can distinguish among the different atomic jumps, which occur in the various phases or at different local ordering. In this paper, it is reported anelastic relaxation measurements in TiO2 samples using a torsion pendulum operating in frequencies around 40Hz, in the temperature range between -173°C to 330°C with heating rate of 1°C/min. The results shown a reduction in the elasticity modulus with the increase in the corn starch content used for this consolidation.

Electrical properties of individual and small ensembles of InAs/InP nanostructures

We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.