Trajectory of neutron-neutron-C-18 excited three-body state

The trajectory of the first excited Efimov state is investigated by using a renormalized zero-range three-body model for a system with two bound and one virtual two-body subsystems. The approach is applied to n-n-C-18, where the n-n virtual energy and the three-body ground state are kept fixed. It is shown that such three-body excited state goes from a bound to a virtual state when the n-C-18 binding energy is increased. Results obtained for the n-C-19 elastic cross-section at low energies also show dominance of an S-matrix pole corresponding to a bound or virtual Efimov state. It is also presented a brief discussion of these findings in the context of ultracold atom physics with tunable scattering lengths. (C) 2008 Elsevier B.V. All rights reserved.

Trajectory of virtual, bound and resonant Efimov states

The pole trajectory of Efimov states for a three-body alpha alpha beta system with alpha alpha unbound and alpha beta bound is calculated using a zero-range Dirac-delta potential. It is shown that a three-body bound state turns into a virtual one by increasing the alpha beta binding energy. This result is consistent with previous results for three equal mass particles. The present approach considers the n-n-(18)C halo nucleus. However, the results have good perspective to be tested and applied in ultracold atomic systems, where one can realize such three-body configuration with tunable two-body interaction.

LARGE ATOMIC and NUCLEAR THREE-BODY SYSTEMS: SCATTERING and BINDING

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Neutron-C-19 scattering near an Efimov state

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Design of hierarchical porous aluminas by using one-pot synthesis and different calcination temperatures

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Annealing effects on optical properties of natural alexandrite

Natural alexandrite (BeAl2O4:Cr3+) crystals are investigated as regards the effects of annealing on their optical properties. Optical absorption spectra are measured from the ultraviolet (190 nm) to the near infrared (900 nm), for a sample subjected to consecutive annealing processes, where time and temperature are varied. Besides this, luminescence spectra are simultaneously obtained for this sample, excited with a Kr+ laser source, tuned on an ultraviolet multi-line mode (337.5, 350.7 and 356.4 nm). We observe from absorption as well as from emission data that annealing mainly influences the distribution of Cr3+ and Fe3+ ions, located on sites of a mirror plane (C-s symmetry), which are responsible for the optical properties of alexandrite. The results obtained lead to the conclusion that annealing induces a modification of the population of Cr3+ on C-s sites as well as on sites located on an inversion plane (C-i). Annealing could improve the optical properties of this material, as regards its application as a tunable laser.

Measurement of atmospheric formaldehyde using a drop collector and in-situ colorimetry

A sensitive and affordable approach is described for the in-situ measurement of ambient formaldehyde. Air is sampled around a 100 microliter aqueous drop containing 3-methyl-2-benzothiazoline hydrazone. After a desired period of sampling (typ. 5 min) and a waiting period of 10 min for the reaction to be completed, a second reagent (FeCl3) is added to the drop by means of a conjoined conduit. A blue product is formed and is read after an additional 10 min of reaction by a fiber-optic/light emitting diode based photodetector. A fresh drop is then formed and the process begins anew. As demonstrated here, the limit of detection is similar to 6.25 mu g m(-3) HCHO but can be significantly improved by using longer sampling times and a sampling rate higher than 100 mi min(-1) used in most of this work. This is the first example of a chromogenic drop sensor that utilizes sequential reagent addition.

Zirconia foams prepared by integration of the sol-gel method and dual soft template techniques

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Lanthanide-Containing Light-Emitting Organic-Inorganic Hybrids: A Bet on the Future

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A low-voltage low-sensitivity sinusoidal VCO for DPLL realizations

A quasi-sinusoidal linearly tunable OTA-C VCO built with triode-region transconductors is presented. Oscillation upon power-on is ensured by RHP poles associated with gate-drain capacitances of OTA input devices. Since the OTA nonlinearity stabilizes the amplitude, the oscillation frequency f0 is first-order independent of VDD, making the VCO adequate to mixed-mode designs. A range of simulations attests the theoretical analysis. As part of a DPLL, the VCO was prototyped on a 0.8μm CMOS process, occupying an area of 0.15mm2. Nominal f0 is 1MHz, with K VCo=8.4KHz/mV. Measured sensitivity to VDD is below 2.17, while phase noise is -86dBc at 100-KHz offset. The feasibility of the VCO for higher frequencies is verified by a redesign based on a 0.35μm CMOS process and VDD=3.3V, with a linear frequency-span of l3.2MHz - 61.5MHz.

A Gm-C bump equalizer for low-voltage low-power applications

A low-voltage low-power 2nd-order CMOS pseudo-differential bump-equalizer is presented. Its topology comprises a bandpass section with adjustable center frequency and quality factor, together with a programmable current amplifier. The basic building blocks are triode-operating transconductors, tunable by means of either a DC voltage or a digitally controlled current divider. The bump-equalizer as part of a battery-operated hearing aid device is designed for a 1.4V-supply and a 0.35μm CMOS fabrication process. The circuit performance is supported by a set of simulation results, which indicates a center frequency from 600Hz to 2.4kHz, 1≤Q≤5, and an adjustable gain within ±6dB at center frequency. The filter dynamic range lies around 40dB. Quiescent consumption is kept below 12μW for any configuration of the filter.

CMOS-based active pixel for low-light-level detection: Analysis and measurements

An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is proposed. An analytic expression for the output voltage of the APS obtained with this capacitance model is in good agreement with measurements and is more accurate than the models used previously. A different mode of operation for the APS based on the dc level of the output is suggested. This new mode has better low-light-level sensitivity than the conventional APS operating mode, and it has a slower temporal response to the change of the incident light power. At 1μW/cm2 and lower levels of light, the measured signal-to-noise ratio (SNR) of this new mode is more than 10 dB higher than the SNR of previously reported APS circuits. Also, with an output SNR of about 10 dB, the proposed dc level is capable of detecting light powers as low as 20 nW/cm2, which is about 30 times lower than the light power detected in recent reports by other groups. © 2007 IEEE.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Proposta de construção de um amortecedor de vibração ajustável, TVA, utilizando fluido magnetoreológico

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