Investigação das propriedades ópticas, elétricas e estruturais em ametista

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Photoelectrochemical properties of FTO/p-NiO electrode induced by UV light irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electron transfer between adjacent layers in self-assembled films

A simple model of electron transfer is adapted to explain fluorescence quenching in self-assembled films of poly( p-phenylene vinylene) (PPV) alternating with poly(thiophene acetic acid) (PTAA). Quenching is caused by a photo-induced electron transfer between the excited PPV (donor, D) and the PTAA (acceptor, A). The electron-transfer process can be mediated by insertion of electronically inert spacing bilayers between the D and A layers, As the number of bilayers is increased, the fluorescence is gradually recovered which is explained theoretically by assuming that the electron-transfer rate can be described as k = Z exp(- beta r) where r is the distance between D and A. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigação das propriedades ópticas e elétricas em alexandrita natural e sintética

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Matrizes semicondutoras GaAs e Sn'X IND. 2' dopado com terras-raras Ce ou Eu: investigação do transporte elétrico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fabricação e caracterização de filmes finos e ultrafinos de coroas de éter com azobenzeno incorporado e estudo da birrefringência fotoinduzida

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparação e caracterização de resina epóxi transparente dopada com nanoestruturas semicondutoras de CdS

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência da acidez da suspensão coloidal para a geração de defeitos pontuais e emissão no infra vermelho em SnO2 dopado com Er

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Study of photoinduced birefringence vs As content in thin GeAsS films

Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB.

Tailoring the refractive index of Ge-S based glass for 3D embedded waveguides operating in the mid-IR region

The photosensitivity of GeSx binary glasses in response to irradiation to femtosecond pulses at 800 nm is investigated. Samples with three different molecular compositions were irradiated under different exposure conditions. The material response to laser exposure was characterized by both refractometry and micro-Raman spectroscopy. It is shown that the relative content of sulfur in the glass matrix influences the photo-induced refractive index modification. At low sulfur content, both positive and negative index changes can be obtained while at high sulfur content, only a positive index change can be reached. These changes were correlated with variations in the Raman response of exposed glass which were interpreted in terms of structural modifications of the glass network. Under optimized exposure conditions, waveguides with positive index changes of up to 7.8x10−3 and a controllable diameter from 14 to 25 μm can be obtained. Direct inscription of low insertion losses (IL = 3.1 – 3.9 dB) waveguides is demonstrated in a sample characterized by a S/Ge ratio of 4. The current results open a pathway towards the use of Ge-S binary glasses for the fabrication of integrated mid-infrared photonic components.

Estudo dos processos de geração e transferência de cargas em corantes cianinas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.