33 resultados para excitation


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Ultrafast photoinduced absorption by infrared-active vibrational modes is used to detect charged solitons in oriented trans-polyacetylene. Soliton pairs are photogenerated within similar to250 fs with quantum efficiencies (phi(ch)) approaching unity. The excitation spectrum of phi(ch) shows an onset at similar to1.0 eV with a weak photon energy dependence up to 4.7 eV. The results are consistent with the ultrafast soliton formation predicted by Su and Schrieffer and with the Su-Scrieffer-Heeger threshold of 2E(g)/pi for soliton pair production. The recombination dynamics of charged solitons is very fast (initial decay<1 ps) with a modest dependence on the pump photon energy.

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Ultrafast photoinduced absorption by IRAV modes is used to detect charged solitons in oriented polyacetylene. We find that soliton pairs are photogenerated within our time resolution of similar to250 fs with similar to100% quantum efficiency (phi(ch)). The excitation spectrum of phi(ch) shows an onset at 1.0 eV, with a weak photon energy dependence up to 4.7 eV. These results agree with the ultrafast soliton formation predicted by Su and Schrieffer and with the SSH threshold of 2E(g)/pi for soliton pair production.

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Positronium formation and target excitation in positron-helium scattering have been investigated using the close-coupling approximation with realistic wave functions for the positronium and helium atoms. The following eight states have been used in the close-coupling scheme: He(1s1s), He(1s2(1)s), He(1s2(1)p), He(1s3(1)s), He(1s3(1)p), Ps(1s), Ps(2s), and Ps(2p), where Ps stands for the positronium atom. Calculations are reported of differential cross sections for elastic scatering,, inelastic target excitation to He(1s2(1)s) and He(1s2(1)p) slates, and rearrangement transition to Ps(1s), Ps(2s), and Ps(2p) states for incident positron energies between 40 and 200 eV. The coincidence parameters for the transition to the He(1s2(1)p) state of helium are also reported and briefly discussed. [S1050-2947(98)05101-4].

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Monochromatic light excitation in conjunction with thermally stimulated depolarization current measurements are applied to indirect bandgap AlxGa1-xAs. The obtained average activation energy for dipole relaxation is in very close agreement with the DX center binding energy. Monochromatic light induces state transition in the defect and makes possible the identification of dipoles observed in the dark. Charge relaxation currents are destroyed by photoionization of Al0.5Ga0.5As using either 647 nm Kr+ or 488 nm Ar+ laser lines, which are above the DX center threshold photoionization energy. It suggests that correlation may exist among charged donor states DX--d+. Sample resistance as a function of temperature is also measured in the dark and under illumination and shows the probable X valley effective mass state participation in the electron trapping. Ionization with energies of 0.8 eV and 1.24 eV leads to striking current peak shifts in the thermally stimulated depolarization bands. Since vacancies are present in this material, they may be responsible for the secondary band observed in the dark as well as participation in the light induced recombination process.

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Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

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Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

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This paper presents a nonlinear dynamic analysis of a flexible portal frame subjected to support excitation, which is provided by an electro-dynamical shaker. The problem is reduced to a mathematical model of four degrees of freedom and the equations of motion are derived via Lagrangian formulation. The main goal of this study is to investigate the dynamic interactions between a flexible portal frame and a non-ideal support excitation. The numerical analysis shows a complex behavior of the system, which can be observed by phase spaces, Poincaŕ sections and bifurcation diagrams. © 2012 American Institute of Physics.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Chronic intermittent hypoxia (CIH) has been identified as a relevant risk factor for the development of enhanced sympathetic outflow and arterial hypertension. Several studies have highlighted the importance of peripheral chemoreceptors for the cardiovascular changes elicited by CIH. However, the effects of CIH on the central mechanisms regulating sympathetic outflow are not fully elucidated. Our research group has explored the hypothesis that the enhanced sympathetic drive following CIH exposure is, at least in part, dependent on alterations in the respiratory network and its interaction with the sympathetic nervous system. In this report, I discuss the changes in the discharge profile of baseline sympathetic activity in rats exposed to CIH, their association with the generation of active expiration and the interactions between expiratory and sympathetic neurones after CIH conditioning. Together, these findings are consistent with the theory that mechanisms of central respiratory–sympathetic coupling are a novel factor in the development of neurogenic hypertension.