Erbium-activated silica-zirconia planar waveguides prepared by sol-gel route

Er(3+) doped (100-x)SiO(2)-xZrO(2) planar waveguides were prepared by the sol-gel route, with x ranging from 10 up to 30 mol%. Multilayer films doped with 0.3 mol% Er(3+) ions were deposited on fused quartz substrates by the dip-coating technique. The thickness and refractive index were measured by m-line spectroscopy at different wavelengths. The fabrication protocol was optimized in order to confine one propagating mode at 1.5 mu m. Photoluminescence in the near and visible region indicated a crystalline local environment for the Er(3+) ion. (c) 2007 Elsevier B.V. All rights reserved.

Upconversion luminescence in Er3+ doped and Er3+/Yb3+ codoped zirconia and hafnia nanocrystals excited at 980 nm

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigação de Er3+ nos dois sítios cristalográficos de Gd2SiO5 através da fotoluminescência resolvida no tempo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Evaluation of rare earth oxides doping SnO2.(Co1/4,Mn3/4)O-based varistor system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO2 (110) surface models

We theoretically investigated how the formation of oxygen vacancies and the addition of niobium and chromium atoms as dopants modify the varistor properties of TiO2. The calculations were carried out at the HF level using a contracted basis set, developed by Huzinaga et al.. to represent the atomic centers on the (110) surface for the large (TiO2)(15) cluster model. The change of the values for the net atomic charges and band gap after oxygen vacancy formation and the presence of dopants in the lattice are analyzed and discussed. It is shown that the formation of oxygen vacancies decreases the band gap while an opposite effect is found when dopants are located in the reduced surface. The theoretical results are compared with available experimental data. A plausible explanation of the varistor behavior of this system is proposed. (C) 1997 John Wiley & Sons, Inc.

Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Doping of polyaniline by corona discharge

In the present article it is shown that a corona discharge can be employed to dope thin films of polyaniline (PANI) coated on poly(ethylene terephthalate) films, allowing the electrical conductivity to be tuned within the range 10(-10) to 0.3 S cm(-1). A study of the effect of different corona conditions, namely corona treatment for positive and negative polarities, air humidity, treatment time, corona current, and the geometry of the corona triode, on the electrical conductivity of the polyaniline is presented. The results indicate that the corona discharge leads to protonic doping of polyaniline similar to that which occurs in conventional protonic acid solution doping. Atomic force microscopic analysis shows that, as the PANI is exposed to the corona discharge, its globular morphology is disrupted leading to the appearance of droplet-like features and a significant decrease in the average height and surface roughness. Doping by corona discharge presents several advantages over the conventional solution method namely that it is a dry process which does not require use of chemicals reagents, and which is both rapid and avoids dopant migration. The latter can be important for applications of PANI in microelectronic devices. (C) 2000 American Institute of Physics. [S0021-8979(00)01608-X].

Planar waveguides based on nanocrystalline and Er3+ doped SnO2

Luminescent SnO2: x%mol Er3+ (x=0.1-2.0) thin films have been spin coated on borosilicate and silica substrates from water colloidal suspensions that could be prepared containing up to 40% in weight SnO2 nanocrystalline powders. High Resolution Transmission Electron Microscopy results show the well known SnO2 cassiterite structure and nanocrystallites around 10 nm in diameter, corroborating results from X-ray diffraction. Mono and multi layers have been prepared from the stable colloidal suspensions and films thickness was observed to increase linearly, up to 200 nm, with the colloidal suspensions nanoparticles amount. Excitation and emission spectra have been measured and Er3+ ions were found to be essentially incorporated into the cassiterite structure, substituting for Sn4+, for doping concentration lower than 0.05 mol%. Er3+ ions also appear segregated at the grains surface for higher doping concentration. The optical parameters (refractive index, thickness and propagating modes) of a waveguide sample were measured at 632.8 and 543.4 nm by the prism coupling technique. A monomodal waveguide was obtained with attenuation loss of 3.5 dB/cm along a 2.5 cm optical path.

Temperature investigation of infrared-to-visible frequency upconversion in erbium-doped tellurite glasses excited at 1540 nm

Temperature investigation of infrared-to-visible frequency upconversion in erbium-doped tellurite glasses excited by CW laser radiation at 1540 nm and under cryogenic temperatures is reported. Intense upconversion emission signals around 530, 550 and 660 nm corresponding to the H-2(11/2), S-4(3/2), and F-4(9/2) transitions to the I-4(15/2) ground state were generated and studied as a function of the laser intensity and temperature. The upconversion excitation mechanism of the Er3+ ions emitting energy levels was accomplished via stepwise multiphoton absorption. The green upconversion luminescence exhibited a fivefold intensity enhancement when the temperature of the sample was varied in the range between 5 and 300 K. A maximum green upconversion intensity was attained around 120 K and a steady decreasing behavior for higher temperatures up to 300 K was observed. A model based upon conventional rate equations was used to model the observed temperature evolution of the upconversion luminescence. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

Effect of Fe2O3 doping on the electrical properties of a SnO2 based varistor

The effect of Fe2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01CoO + 0.005Nb(2)O(5) + xFe(2)O(3) system, where x = 0.005 or 0.01, was considered in this study. The samples were sintered at 1300degreesC for 2 h. Microstructure analysis by scanning electron microscopy showed that the effect of Fe2O3 addition is to decrease the SnO2 grain size. J x E curves indicated that the system exhibit a varistor behavior and the effect of Fe2O3 is to increase both, the non-linear coefficient (alpha) and the breakdown voltage (E-r). Considering the Schottky thermionic emission model the potential height and width were estimated. Small amount addition of Fe2O3 to the basic system increases both the potential barrier height and width. (C) 2002 Kluwer Academic Publishers.

Erbium-activated HfO2-based waveguides for photonics

Silica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (C) 2003 Elsevier B.V. All rights reserved.

Upconversion luminescence in transparent glass ceramics containing beta-PbF2 nanocrystals doped with erbium

Frequency upconversion luminescence in erbium-doped PbGeO3-PbF2-CdF2-based transparent glass ceramics (TGC) under 980 nm infrared excitation is investigated. Upconversion emission signals around 410, 525, 550, 660, and 850 nm were generated and identified as due to the H-2(9/2) H-2(11/2), S-4(3/2), and F-4(9/2) transitions to the I-4(15/2) ground-state, and S-4(3/2)-I-4(13/2), respectively. The erbium ions excited-state emitting levels were populated via a combination of stepwise ground-state absorption (GSA), excited-state absorption (ESA), and cross-relaxation processes. The results also disclosed that both blue (410 nm) and red (660 nm) upconversion emission signals in the transparent glass ceramic sample presented twice as much intensity as compared to its vitreous counterpart. (C) 2003 Elsevier B.V. All rights reserved.

The effect of EU3+ ion doping concentration in Gd2O3 fine spherical particles

This work reports on the preparation of Gd2O3, cubic system, with spherical particles, narrow size distribution, whether or not doped with 1-5 at.% of Eu3+ and the influence of Eu3+ concentration on optical and morphological properties. Average diameter and size distribution particle analyses were performed for all samples from SEM results. Doped samples were also investigated by luminescence spectroscopy and emission kinetic measurements. All oxide samples present a particle average diameter distribution range from 110 to 150 nm and a decrease of particle average diameter with the presence of Eu3+. The particle size decrease is almost the same for all samples with different doping ion concentration. Therefore, the presence of doping ion may be inhibiting particle growth after the nucleation process. From spectroscopic studies, the doping ion distribution in the surface of oxide samples can be considered homogeneous because concentration quenching is not observed, as well as a significant difference among the calculated lifetime for each sample. (C) 2002 Elsevier B.V. B.V. All rights reserved.